POLY SILICON RESISTOR Search Results

AT35700

Abstract: atmel 1505
Contextual Info: Standard Features • • • • • • • • • 5.0V low-leakage CMOS transistors 17V and 40V high-voltage LDMOS transistors High-density, double-poly memory cell Isolated NMOS and LDMOS transistors Analog Resistors Dual Poly Capacitor Mono-silicon capacitors

S1854

Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
Contextual Info: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:

BLV947

Contextual Info: Philips Semiconductors • _ 711DflSb DDb31bS i n ; _ PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting resistors for an optimum temperature profile

1 kilo ohm resistor specifications

Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
Contextual Info: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •

SK TME 86

Abstract: SK TME 86 i on SK TME 86 i 80 SK TME 86 i 25 MPC11
Contextual Info: April 1992 Semiconductor COP404C ROMIess CMOS Microcontrollers General Description Features The COP4G4C ROMIess Microcontroller is a member of the COPS family, fabricated using double-poly, silicon gate CMOS microCMOS technology. The COP4C4C contains

Contextual Info: N AUER P H IL IP S /D IS C R E T E bTE D bbS3T31 002T0B3 OCH M A P X _Product specification Philips Semiconductors_ UHF linear push-pull power transistor FEATURES • Poly-silicon emitter-ballasting resistors for an optimum

BLV62

Abstract: philips ELECTROLYTIC capacitor fe
Contextual Info: PH ILIPS bSE J> INTERNATIONAL B 711DfiEb ODbETfiD 5T4 • PHIN Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting

Contextual Info: jiPD4369 8,192 X 9-Bit Static CMOS RAM W JL J W NEC Electronics Inc. Description Pin Configuration The /JPD4369 is a high-speed 8,192-word by 9-bit static RAM fabricated with CMOS peripheral circuits and N-channel memory cells with poly silicon resistors. Two

Contextual Info: Philips Semiconductors bb53^31 D0S12bS TSS Bi APX Preliminary specification UHF push-pull power transistor BLV947 — AMER PHILIPS/DISCRETE FEATURES • Poly-silicon emitter-ballasting resistors for an optimum temperature profile QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

Contextual Info: Philips Semiconductors b bS3 T3 i ooa^abs oaa APX Objective specification UHF power transistor BLV946 AMER PHILIPS/DISCRETE b'lE » QUICK REFERENCE DATA FEATURES • Double internal input matching for easy matching and high gain • Poly-silicon emitter ballasting

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting

Contextual Info: , L/nc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF push-pull power transistor FEATURES • Double Input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

Contextual Info: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

Contextual Info: PRELIMINARY FEATURES iMEMS Single Chip I.C. Accelerometer 40 milli-g Resolution Low power 2 mA 400 Hz Bandwidth +5.0 V Single Supply Operation 2000 g Shock Survival GENERAL DESCRIPTION The ADXL190 is a complete acceleration measurement system on a single monolithic IC. It contains a poly silicon

gi 9420

Abstract: gi 9444 c9444 SIL 100-02 8503 9344n TC 9420 f 9444 PC106A tc9420
Contextual Info: ETC 9420/21122 • ETC 9320/21122 ETC9444/45 • ETC9344/45 SINGLE CHIP MICROCONTROLLERS he ETC 9420, C 9421, C 9422, C 9320, C 9321, C 9322, and ETC 9445, C 344, C 9345 fully static single-chip CMOS microcontr ollers are fully compaDle with the COPS family, fabricated using double-poly, silicon gate

Contextual Info: UbE D SILICON SYSTEMS INC • aaSB'ibS Q00S27b 0 ■ SIL T -Y 2-7? CUSTOM SOLUTIONS s m m s iis k m s A TDK Group/Company SILICON SYSTEMS LEADS THE WAY DEVELOPING MIXED-SIGNAL CUSTOM PRODUCTS. Faster to market for mixed-signal applications Whatever your mixed-signal design application, Silicon

CMOS

Abstract: pmos4
Contextual Info: 0.8 µm CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Tele­com­mu­ni­cation and Automotive products - including the 42V board net.

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

Contextual Info: MÉL Micro Linear USICs FC3510 General Purpose BiCMOS Tile Array FEATURES GENERAL DESCRIPTION The FC.3510 is one member of a high speed, high complexity fam ily of General Purpose Tile Arrays using our new 5 volt, 4 G H z BiCM O S technology. These BiCM O S Tile Arrays allow high speed, high complexity,

BR-1196

Abstract: BR1196 CAPACITOR 100 nano FARAD 25 VOLT ST37 0.1 micro farad capacitor 10 pico farad capacitor 1 micro farad capacitor 50 VOLT milli farad capacitor BR119 ST-37
Contextual Info: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC PAGE # spe020.4 1 de 4 PARAMETERS PROCUREMENT SPECIFICATION FOR THE 5 VOLTS 1.2 µm PROCESS FAMILY TITRE CRÉATEUR FRANÇOIS PELLETIER RÉV DATE 1 2 25-04-94 21-04-95 ACI BR-952 BR-1196 DESCRIPTION

XP018

Contextual Info: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single

CD4069A

Abstract: Mic5009 CD4584B bcd counter using j-k flip flop diagram design a BCD counter using j-k flipflop cd4011a rca printhead module 54C244 CD4051A MM54C09
Contextual Info: HICREL SEM ICO NDUCTOR_ 3ME D a bOaflfliq 0000551 T dflRL Micrel Services and Special Products TTiÿL 9 9 Micrel Services and Special Products Custom 1C Capability Choice. the freedom to select what suits you best. The ability to choose is your reward when you go with Micrel.

Contextual Info: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with