POLY SILICON RESISTOR Search Results

AT35700

Abstract: atmel 1505
Contextual Info: Standard Features • • • • • • • • • 5.0V low-leakage CMOS transistors 17V and 40V high-voltage LDMOS transistors High-density, double-poly memory cell Isolated NMOS and LDMOS transistors Analog Resistors Dual Poly Capacitor Mono-silicon capacitors

lcd n 20201

Abstract: CLW10 38495 S337 89v51 s179 bd 5445 code s244
Contextual Info: HD66779 366-channel Source Driver for 262,144-color Displays 64 grayscale for Amorphous Silicon, Low-temperature Poly-silicon TFT Panels REJxxxxxxx-xxxxZ Rev.1.00 June.13.2003 Description . 4

S1854

Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
Contextual Info: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:

R016H

Abstract: R405h HD667P20 22350 R01Bh AD168 HD667P21 S252 HD66776 KVP28
Contextual Info: HD66776 Low Temperature poly-silicon TFT Panel 256-channel Source Driver with Internal RAM for 262,144-color display REJxxxxxxx-xxxxZ Rev.1.11 Oct.02.2003 Index Description . 6

BLV947

Contextual Info: Philips Semiconductors • _ 711DflSb DDb31bS i n ; _ PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting resistors for an optimum temperature profile

1 kilo ohm resistor specifications

Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
Contextual Info: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •

SK TME 86

Abstract: SK TME 86 i on SK TME 86 i 80 SK TME 86 i 25 MPC11
Contextual Info: April 1992 Semiconductor COP404C ROMIess CMOS Microcontrollers General Description Features The COP4G4C ROMIess Microcontroller is a member of the COPS family, fabricated using double-poly, silicon gate CMOS microCMOS technology. The COP4C4C contains

COP404CN

Abstract: COP404C COP410C COP424C COP444C SE-L200 cm944 M50K 523BF 1010I
Contextual Info: COP404C National Semiconductor COP404C ROMIess CMOS Microcontrollers General Description Features The COP404C ROMIess Microcontroller Is a member of the CO PS -family, fabricated using double-poly, silicon gate CMOS microCMOS technology. The COP404C contains

Contextual Info: N AUER P H IL IP S /D IS C R E T E bTE D bbS3T31 002T0B3 OCH M A P X _Product specification Philips Semiconductors_ UHF linear push-pull power transistor FEATURES • Poly-silicon emitter-ballasting resistors for an optimum

diode S498 equivalent

Abstract: s415 rf switch s403 diode S432 DIODE schottky diode s524 DIODE S417 Schottky diode S475 schottky s407 diode s405 diode s426
Contextual Info: HD66772 Rev. 1.1-3a / March, 2003 HD66772 Amorphous Silicon/Low-temperature Poly-silicon TFT Panel 528-channel Source Driver with Internal RAM for 260-thousand-color Displays Rev. 1.1-3a March, 2003 Description The HD66772 528-channel source driver LSI is used in combination with the HD66774 gate

diode s498

Abstract: DIODE S456 Schottky DIODE S526 Schottky
Contextual Info: HD66772 Rev. 1.1-2 / October, 2002 HD66772 Amorphous Silicon/Low-temperature Poly-silicon TFT Panel 528-channel Source Driver with Internal RAM for 260-thousand-color Displays Rev. 1.1-2 October, 2002 Description The HD66772 528-channel source driver LSI is used in combination with the HD66774 gate

BLV62

Abstract: philips ELECTROLYTIC capacitor fe
Contextual Info: PH ILIPS bSE J> INTERNATIONAL B 711DfiEb ODbETfiD 5T4 • PHIN Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting

Contextual Info: jiPD4369 8,192 X 9-Bit Static CMOS RAM W JL J W NEC Electronics Inc. Description Pin Configuration The /JPD4369 is a high-speed 8,192-word by 9-bit static RAM fabricated with CMOS peripheral circuits and N-channel memory cells with poly silicon resistors. Two

Contextual Info: Philips Semiconductors bb53^31 D0S12bS TSS Bi APX Preliminary specification UHF push-pull power transistor BLV947 — AMER PHILIPS/DISCRETE FEATURES • Poly-silicon emitter-ballasting resistors for an optimum temperature profile QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

COP311C

Abstract: COP400 COP410C COP411C H-16
Contextual Info: COP410C/CO P411C /C O P310C/CO P311C Single-Chip CMOS Microcontrollers General Description Features The COP410C, COP411C, COP3-IOC, and COP311C fully static, single-chip CMOS microcontrollers are members of the COPS tm family, fabricated using double-poly, silicon­

L0615

Abstract: CQP210C CQP400 D20A B444 COP211C binary bcd conversion 84443 84448
Contextual Info: COP210C/COP211C yw\National Juâ Semiconductor COP210C/COP211C Single-Chip CMOS Microcontrollers General Description Features The COP210C and COP211C fully static, single-chip CMOS microcontrollers are members of the COPStm family, fabri­ cated using double-poly, silicon-gate CMOS technology.

kf 202 transistor

Abstract: Chirp spice gummel SR770 spectra physics
Contextual Info: Measurement of ‘1/f’ Noise in Narrow Poly-silicon Emitter Bipolar Transistor Structures. S.D. Connor Bipolar Characterization Group, Central R&D, GEC Plessey Semiconductors, Tweedale Way, Oldham, Lancs OL9 7LA, England. Abstract:- We present here our initial findings on low frequency

Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting

BLV947

Abstract: uhf npn 200w cw transistor 200w
Contextual Info: Philips Semiconductors bb53^31 OOEISbS TS5 APX Preliminary specification BLV947 UHF push-pull power transistor •N AMER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

Contextual Info: , L/nc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF push-pull power transistor FEATURES • Double Input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting

NFET DIE CHIP

Abstract: poly silicon resistor OP02
Contextual Info: . I . - HOLT INTEGRATED CIRCUITS 1£E J T 454114.3 OOQOEbl 4 •P¥2-3/ HI - 5 3 0 0 CMOS ANALOG/DIGITAL ARRAY General Description The HI-5300 CMOS Analog/Digital Array uses stan­ dard CMOS silicon gate double poly fabrication tech­

TRANSISTOR C 1177

Contextual Info: MTC-3200 HBIMOS Standard Cell Library Services BICMOS Family Features • Technology: DMOS, BIPOLAR and CMOS 3|i channel length, silicon g ate, single poly, double m etal, w ith compacted interconnect design rules • Typical G ate Delay: 2 .5 ns VM* 15V

acumos

Abstract: list of n channel fet A300 MF10 nmos pmos array n channel fet array
Contextual Info: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel

Contextual Info: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting