POLY DIELECTRIC CAPACITOR Search Results

CMOS Process Family

Abstract: 0.6 um cmos process BSIM3 resistor bsim3 bsim3 model metal oxide in capacitor xfab X-Fab
Contextual Info: 0.8 µm CMOS Process Family CX08 State-of-the-art 5V 0.8µm CMOS Technology Main Process Flow with additional options: P substrate Analog elements: linear capacitor, high ohmic resistor High voltage module: different n- and p-type, MOSFETs up to 50V, N substrate on demand

transistor poly3

Abstract: RR510 RR-504 RR-520 X28C256 rr520
Contextual Info: Xicor Endurance Report Xicor Endurance Report RR-520 H. A.R. Wegener INTRODUCTION This report describes endurance relating to Xicor’sproducts employing the Direct WriteTM cell. These devices display enhanced endurance cycling characteristics that are attributable to the direct write cell, process

SC-15

Abstract: EEPROM flotox Japanese Transistor Cross References
Contextual Info: u these components. In this paper, we will focus on the technology factors by comparing the three dom ­ inant E2 technologies to date, and giving our own viewpoint on the development in the market place. COMPARISON AND TRENDS IN TO DAY’S DOM INANT E2 TECHNOLOGIES

SCR SN 101

Abstract: AY 5 3500 AY 6 smd SCR SN 102 SN 101 SCR
Contextual Info: A H S e r ie s: P 9 0 P or ce lain C ap acitor s D e scr ip tion F u n ction al A p p lication s B e n e fi ts Porcelain Capacitors Positiv e TC “ P90” L ow ESR, High Q Capacitance Range 0.1 - 5100 pF High Self- resonance L ow Noise Established Reliability

ccd diode datasheet

Abstract: and gate cmos Poly
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services CMOS CCD Processes 1.2µm CMOS CCD Process ❖ ❖ ❖ ❖ ❖ ❖ ❖ ❖ Integration of CCD elements into a 1.2 N-well process 2 poly, 2 metal

2P4M

Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Contextual Info: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)

transistor equivalent table

Abstract: SD2300
Contextual Info: NEW ULTRA-HIGH DEN SITY TEX TU R ED POLY-Si FLOATING G A TE E 2PROM C E L L By D. Guterman, B. Houck, L. Starnes and B. Yeh This paper describes a new, highly scaled cell structure, the smallest full function E2PROM cell re­ ported to date. It utilizes the textured triple-poly-si

all transistor

Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
Contextual Info: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation

Mn2O3

Abstract: 20D3 graphite foil APEC ips presentation
Contextual Info: 1 of 9 Improvements with Polymer Cathodes in Aluminum and Tantalum Capacitors John D. Prymak KEMET Electronics Corporation P. O. Box 5928 Greenville, SC 29606 Abstract – Reducing ESR in the tantalum capacitor has been the key driver in the application of polymer as a replacement for the

CMOS Process Family

Abstract: 0.6 um cmos process 500-nm CMOS standard cell library CX06
Contextual Info: 0.6 µm CMOS Process Family CX06 State-of-the-art 5V 0.6µm CMOS Technology Single-layer poly with double and triple layer metal option Double-layer poly with double and triple layer metal option Digital standard cell library Analog elements Memory generators RAM, DPRAM, ROM compiler

NMOS transistor 0.18 um CMOS

Abstract: 1P3M LOCOS
Contextual Info: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

INTERMETal diode

Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

bsim3v3

Abstract: C035ANV IMD2 transistor pmos Vt poly dielectric capacitor
Contextual Info: ANV Process ID: SM/SN [C035ANV] Applications Main Process Flow Situations where single-cell operation or • P Substrate extended battery life are key, e.g: • High Voltage Wells optional

AL 2001

Abstract: AL-2001 graphite foil capacitor electrolyte datasheet F2118 mno2 Al2001 T557
Contextual Info: Performance Improvements with Polymer Ta and Al 2001 APEC by John Prymak Applications Manager P.O. Box 5928 Greenville, SC 29606 Phone (864) 963-6300 Fax (864) 963-66521 www.kemet.com F2118 12/04 1 of 9 Improvements with Polymer Cathodes in Aluminum and Tantalum Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

2225J5

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Tuesday 9th June 2009 ABOUT SYFER Go Input Part Number High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

Contextual Info: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V, 20V/5V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Twin-well (Nwell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

SCR SN 101

Abstract: AY 5 3500 MARK C06 c 5568 SMD CAPACITORS 106 E 14 mark code smd 050R6
Contextual Info: C F S e r ie s: U ltr astable P or ce lain C ap acitor s D e scr ip tion F u n ction al A p p lication s B e n e fi ts Porcelain Capacitors Ultra Temperature Stable L ow ESR, High Q Capacitance Range 0.1 - 5100 pF High Self- resonance L ow Noise Established Reliability

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors

2225J5

Contextual Info: Syfer - Multilayer Ceramic Capacitors and EMI Filters Tuesday 9th June 2009 ABOUT SYFER Go Input Part Number High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors