PNZ313B Search Results

PN313B

Abstract: PNZ313B vr301
Contextual Info: PIN Photodiodes PNZ313B PN313B PIN Photodiode Unit : mm For optical control systems 7.0±0.5 Anode mark ø1.6 Device center 8.0±0.5 5.0 Features 2-1.2±0.15 2-0.6±0.15 0.41±0.15 13 min. 2.3±0.3 Fast response which is well suited to high speed modulated light

PNZ313B

Abstract: VR301
Contextual Info: PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optical control systems 7.0±0.5 Anode mark ø1.6 Device center 8.0±0.5 5.0 Features 2-1.2±0.15 2-0.6±0.15 0.41±0.15 13 min. 2.3±0.3 Fast response which is well suited to high speed modulated light

PN313B

Abstract: PNZ313B
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

PN313B

Abstract: PNZ313B
Contextual Info: PIN Photodiodes PNZ313B PN313B Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) • Features (5.0) 8.0±0.5 13 min. Device center 2-1.2±0.15 2.3±0.3 • Fast response which is well suited to high speed modulated light

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) • Features (5.0) 8.0±0.5 13 min. Device center 2-1.2±0.15 2.3±0.3 • Fast response which is well suited to high speed modulated light

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) • Features 2-1.2±0.15 2.3±0.3 13 min. M Di ain sc te on na tin nc ue e/

PN313B

Abstract: PNZ313B
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems • Features  Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

TC4009BP

Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
Contextual Info: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)