PNP LOW SATURATION Search Results

MLP322

Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
Contextual Info: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state

SMD TRANSISTOR MARKING 2e

Abstract: 2e SMD PNP TRANSISTOR
Contextual Info: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

PBSS4160

Abstract: PBSS4160DS PBSS5160DS
Contextual Info: PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 16 July 2004 Objective data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. NPN complement: PBSS4160DS. 1.2 Features

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)

PNP TRANSISTOR SOT666

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it

PBSS5140D

Abstract: PNP TRANSISTOR SOT457
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D302 PBSS5140D 40 V low VCEsat PNP transistor Product specification 2001 Nov 15 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140D QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage

marking code TR2

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product specification 2003 Feb 20 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat

PNP TRANSISTOR SOT457

Abstract: marking code SC-74
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product specification 2002 Jun 12 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor PBSS5320D FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

PBSS4350SPN

Abstract: PBSS4350SS PBSS5350SS
Contextual Info: PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

PBSS4240DPN

Abstract: marking code TR2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat

sot23 transistor marking ZF

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5240T 40 V low VCEsat PNP transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

Contextual Info: DISCRETE SEMICONDUCTORS DAT fpage MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product data sheet 2002 Jun 12 NXP Semiconductors Product data sheet 20 V low VCEsat PNP transistor PBSS5320D QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage

PBSS5320D

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product data sheet 2002 Jun 12 NXP Semiconductors Product data sheet 20 V low VCEsat PNP transistor PBSS5320D FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

Contextual Info: PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

250 B 340 smd Transistor

Abstract: 4032SP
Contextual Info: PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

250 B 340 smd Transistor

Contextual Info: PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat BISS transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

smd transistor marking A5

Abstract: PBSS4160DS PBSS5160DS
Contextual Info: PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat BISS transistor Rev. 03 — 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PUMT1 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION Two independently operating PNP transistors. „ FEATURES * Low Current Max. -100mA * Low Voltage (Max. -40V) * Reduces Number of Components and Board Space.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PUMT1 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION Two independently operating PNP transistors. „ FEATURES * Low Current Max. -100mA * Low Voltage (Max. -40V) * Reduces Number of Components and Board Space.