PNP 200V 5A Search Results

PNP 200V 5A Result Highlights (5)

Part	Manufacturer	Description	Download
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)	Datasheet
TTA014	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold	Datasheet

PNP 200V 5A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state	Original	ZXTP03200BG OT223 -200V -160mV OT223 D-81541 A1103-04,	PDF
Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state	Original	ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA ZXTP03200BG A1103-04, 522-ZXTP03200BGTA ZXTP03200BGTA	PDF
PNP 200V 2A SOT89 Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A Contextual Info: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state	Original	ZXTP03200BZ -200V -160mV ZXTP03200BZTA D-81541 A1103-04, PNP 200V 2A SOT89 TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A	PDF
TS16949 Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state	Original	ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA D-81541 A1103-04, TS16949 ZXTP03200BG ZXTP03200BGTA marking sot223 GY	PDF
FZT956 Contextual Info: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current	Original	FZT956 OT223 -200V -165mV AEC-Q101 OT223 J-STD-020 MIL-STD-202, FZT956 DS36119	PDF
Contextual Info: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi−Fi Power Amp, Audio Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE92 NTE93	PDF
NTE92 Abstract: NTE93 NTE93MCP pnp 200v Contextual Info: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi–Fi Power Amp, Audio Ourtput Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE92 NTE93 NTE92 NTE93 NTE93MCP pnp 200v	PDF
pnp 200v 5a switching characteristics Abstract: pnp 200v 2SA1250 200v 5a transistor Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.	Original	2SA1250 -200V -10mA; -200V; pnp 200v 5a switching characteristics pnp 200v 2SA1250 200v 5a transistor	PDF
2SA651 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA651 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.	Original	2SA651 -200V -25mA; -200V; 2SA651	PDF
2SC2607 Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.	Original	2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor	PDF
2SC2608 Abstract: 2SA1117 pnp 200v 5a switching times Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 APPLICATIONS ·Designed for general purpose applications.	Original	2SA1117 -200V 2SC2608 -50mA; -200V; 2SC2608 2SA1117 pnp 200v 5a switching times	PDF
2SC2607 Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.	Original	2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent	PDF
2SA1169 Abstract: 2SC2773 transistor 2SA1169 transistor pnp VCEO 12V Ic 1A transistor pnp 12v 1a Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1169 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2773 APPLICATIONS ·Designed for power amplifier and general purpose	Original	2SA1169 -200V 2SC2773 -50mA; -200V; 2SA1169 2SC2773 transistor 2SA1169 transistor pnp VCEO 12V Ic 1A transistor pnp 12v 1a	PDF
2SC3857 Abstract: 2SA1493 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications	Original	2SA1493 -200V 2SC3857 -200V; 2SC3857 2SA1493	PDF

2SA2151 Abstract: 2sc6011 200v 5a pnp 2sa215 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications	Original	2SA2151 -200V 2SC6011 -50mA -200V 2SA2151 2sc6011 200v 5a pnp 2sa215	PDF
2SA2151 Abstract: 2sc6011 2SA21 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications	Original	2SA2151 -200V 2SC6011 150therwise -50mA -200V 2SA2151 2sc6011 2SA21	PDF
Contextual Info: , U na. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1250 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) • Low Collector Saturatioin Voltage.)= -1.0V(Max.)@ lc= -5A	Original	2SA1250 -200V -10mA; -200V;	PDF
2SC2607 Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation	Original	2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607	PDF
2SA1117 Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation	Original	2SA1117 -200V 2SC2608 -50mA; -200V; 2SA1117	PDF
2SB645 Abstract: 200w audio amplifier ic 2SD665 200w audio power amplifier Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB645 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD665 APPLICATIONS ·Designed for power amplifier applications.	Original	2SB645 -200V 2SD665 -10mA; -100V; 2SB645 200w audio amplifier ic 2SD665 200w audio power amplifier	PDF
2SC1586 Abstract: 2SA909 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA909 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) ·Complement to Type 2SC1586 APPLICATIONS ·Designed for amplifier and general purpose applications.	Original	2SA909 -200V 2SC1586 -50mA; -200V; 2SC1586 2SA909	PDF
2SA2151 Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA2151 Silicon PNP Power Transistor ./ f pX^ DESCRIPTION 1I • High Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) r^, I PIN 1.8ASE	Original	2SA2151 -200V 2SC6011 -50mA -200V 2SA2151	PDF
2SC2773 Abstract: 2sa1169 Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1169 DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE V(BR)CEo= -200V(Min) • High Power Dissipation	Original	2SA1169 -200V 2SC2773 MT-200 -50mA; -200V; 2SC2773 2sa1169	PDF
DTP3200B Abstract: DXTP03200BP5 DXTP03200BP5-13 Contextual Info: A Product Line of Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W	Original	DXTP03200BP5 OT223; -200V J-STD-020 MIL-STD-202, DS32068 DTP3200B DXTP03200BP5 DXTP03200BP5-13	PDF

PNP 200V 5A Search Results

PNP 200V 5A Result Highlights (5)

PNP 200V 5A Datasheets Context Search

PNP 200V 2A SOT89

TS16949

FZT956

NTE92

pnp 200v 5a switching characteristics

2SA651

2SC2607

2SC2608

2SC2607

2SA1169

2SC3857

2SA2151

2SA2151

2SC2607

2SA1117

2SB645

2SC1586

2SA2151

2SC2773

DTP3200B