PNP 15W Search Results

PNP 15W Result Highlights (5)

Part	Manufacturer	Description	Download
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)	Datasheet
TTA014	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold	Datasheet

PNP 15W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c2611 Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238 Contextual Info: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO ICEO	Original	O-126 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SC3417 BD437 BD238 c2611 BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238	PDF
Contextual Info: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating	OCR Scan	BF721T1/D BF721T1	PDF
2SA1009 Abstract: nec 2sa1009 2SA1009A "Silicon Power Transistors" Contextual Info: PNP SILICON POWER TRANSISTORS 2 D ESCRIPTION S A 1 9 . 2 S A 1 9 A The 2SA1009, 2SA1009A are PNP triple diffused transistors de signed for switching regulator, DC-DC converter and high frequency in m illim e te rs inches power amplifier application. FEATURES	OCR Scan	2SA1009 2SA1009A 2SA1009, 2SA1009A 2SA1009 nec 2sa1009 "Silicon Power Transistors"	PDF
BU808DFH Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416	Original	STX112 STBV68 STBV45 STBV42 STBV32 STX13003 BSS44 BFX34 2N5153 2N5681 BU808DFH ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH	PDF
APC UPS CIRCUIT DIAGRAM rs 1500 Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO	OCR Scan	AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700	PDF
2SB507 Abstract: 2SD313 416W Contextual Info: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier	Original	2SB507 O-220C 2SD313 O-220) 2SB507 2SD313 416W	PDF
D-PAK package Abstract: STA723D STC722D sta723 Contextual Info: STA723D Semiconductor PNP Silicon Transistor Description • General purpose amplifier • D-PAK for surface mount applications Features • PC Collector dissipation =15W • Low speed switching applications • Complementary pair with STC722D Ordering Information	Original	STA723D STC722D STA723 KST-D001-001 -500mA -200mA -500mA, D-PAK package STA723D STC722D sta723	PDF
STA723D Abstract: STC722D Contextual Info: STA723D Semiconductor PNP Silicon Transistor Description PIN Connection • General purpose amplifier • D-PAK for surface mount applications Features • PC Collector dissipation =15W • Low speed switching applications • Complementary pair with STC722D	Original	STA723D STC722D O-252 STA723 KSD-T6O018-000 STA723D STC722D	PDF
2SB507 Abstract: 2SD313 to25W 416W Contextual Info: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier	Original	2SB507 O-220C 2SD313 O-220) 2SB507 2SD313 to25W 416W	PDF
TO220C Abstract: 2SB507 2SD313 Contextual Info: JMnic Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier PINNING	Original	2SB507 O-220C 2SD313 O-220) TO220C 2SB507 2SD313	PDF
2SB507 Abstract: 2SD313 Contextual Info: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier	Original	2SB507 O-220C 2SD313 O-220) 2SB507 2SD313	PDF
STA723D Abstract: STC722D sta723 transistor marking c y Contextual Info: STA723D PNP Silicon Transistor Description PIN Connection • General purpose amplifier • D-PAK for surface mount applications Features • PC Collector dissipation =15W • Low speed switching applications • Complementary pair with STC722D TO-252 Ordering Information	Original	STA723D STC722D O-252 STA723 KSD-T6O018-001 STA723D STC722D sta723 transistor marking c y	PDF
2SA748 Abstract: transistor 2SC1398 2SC1398 equivalent 2SC1398 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA748 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Large Power Dissipation: PC= 15W@ TC= 25℃ ·Complement to Type 2SC1398 APPLICATIONS ·Designed for medium power amplifier applications.	Original	2SA748 2SC1398 -55r-Emitter -500mA; 2SA748 transistor 2SC1398 2SC1398 equivalent 2SC1398	PDF
2SA652 Abstract: TV power transistor datasheet Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA652 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min.) ·Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 15W @TC= 25℃ APPLICATIONS ·Designed for low frequency power amplifier color TV vertical	Original	2SA652 -100V 15PARAMETER -50mA -150V; 2SA652 TV power transistor datasheet	PDF

Contextual Info: STA723D PNP Silicon Transistor Description PIN Connection • General purpose am plifier • D- PAK for surface m ount applicat ions Features • PC Collect or dissipat ion = 15W • Low speed swit ching applicat ions • Com plem ent ary pair wit h STC722D	Original	STA723D STC722D O-252 STA723 KSD-T6O018-001	PDF
NTE354 Contextual Info: NTE354 Silicon PNP Transistor RF Power Output PO = 15W @ 175MHz Description: The NTE354 is designed for 12.5 Volt VHF large−signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with	Original	NTE354 175MHz NTE354 250MHz. 500mA 100kHz	PDF
2SD313 Abstract: 2SB507 transistor 2sd313 Contextual Info: ÆàMOS PEC NPN SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEA TU RES: * Low Collector-Emitter Saturation Voltage VcE satf 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507	OCR Scan	2SB507 2SD313 2SD313 2SB507 transistor 2sd313	PDF
2SB507 Abstract: 2SB507 npn transistor 2SD313 TRANSISTOR AF 416 pnp Contextual Info: ÆàMOS PEC PNP SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage v CE sat r 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SD313	OCR Scan	2SD313 2SB507 2SB507 npn transistor 2SD313 TRANSISTOR AF 416 pnp	PDF
Contextual Info: NTE2522 NPN & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch Features: D High Current Capacity D High Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO	Original	NTE2522 NTE2523 NTE2523 200mA	PDF
NTE2522 Abstract: NTE2523 Contextual Info: NTE2522 NPN & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch Features: D High Current Capacity D High Collector−Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO	Original	NTE2522 NTE2523 NTE2523 200mA NTE2522	PDF
NTE2522 Abstract: NTE2523 Contextual Info: NTE2522 NPN & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch TO251 Features: D High Current Capacity D High Collector−Emitter Saturation Voltage D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	NTE2522 NTE2523 200mA NTE2522 NTE2523	PDF
TRANSISTOR 2SB507 Abstract: TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB507 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313	Original	2SB507 2SD313 TRANSISTOR 2SB507 TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313	PDF
Contextual Info: NTE2528 NPN & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch Features: D High Voltage and High Current Capacity D Fast Switching Time Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V	Original	NTE2528 NTE2529 10IB1 10IB2 700mA, NTE2529,	PDF
transistor 160v 1.5a pnp Abstract: NTE2528 NTE2529 Contextual Info: NTE2528 NPN & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch Features: D High Voltage and High Current Capacity D Fast Switching Time Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V	Original	NTE2528 NTE2529 10IB1 -10IB2 700mA, NTE2529, transistor 160v 1.5a pnp NTE2528 NTE2529	PDF

PNP 15W Search Results

PNP 15W Result Highlights (5)

PNP 15W Datasheets Context Search

c2611

2SA1009

BU808DFH

APC UPS CIRCUIT DIAGRAM rs 1500

2SB507

D-PAK package

STA723D

2SB507

TO220C

2SB507

STA723D

2SA748

2SA652

NTE354

2SD313

2SB507

NTE2522

NTE2522

TRANSISTOR 2SB507

transistor 160v 1.5a pnp