PNP 12Q Search Results
PNP 12Q Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TTA004B |
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PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N | Datasheet | ||
TTA011 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
2SA1943 |
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PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) | Datasheet | ||
TTA014 |
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PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold | Datasheet |
PNP 12Q Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2Sc2486
Abstract: 2SA1062
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OCR Scan |
QQ104S1 T-33-/3 2SA1062 2SC2486 2SA1062 2SC2486 s-120 | |
Contextual Info: PANASONIC INDL/ELEK -CIO 1EE 1 • bTBSÛSS QQ104S1 T ■ Silicon Epitaxal Base ‘ lesa Transistor T-33-Z1 r 33 3 2SA1062 PNP) 2SC2486(NPN) TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C) Item |
OCR Scan |
QQ104S1 2SA1062 2SA1062 2SC2486 | |
2SA1062
Abstract: 2SC2486
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OCR Scan |
T-33-/3 2SA1062 2SC2486 2SA1062 2SC2486 | |
Contextual Info: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R -0.1 -20 -40 -100 -5.0 -100 -35 -4.0 WEITRON http://www.weitron.com.tw S9012SLT1=12S 1/2 -0.15 u -0.15 |
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S9012LT1 OT-23 S9012PLT1 S9012QLT1 S9012RLT1 S9012SLT1 28-Apr-2011 -50mAdc) | |
marking 12Q SOT-23Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping L9012PLT1G 12P 3000/Tape&Reel |
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L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G marking 12Q SOT-23 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping 12P 3000/Tape&Reel L9012PLT1G |
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L9012PLT1G 3000/Tape OT-23 O-236AB) L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G | |
L9012QLT1G
Abstract: L9012RLT1G L9012SLT1G L9012 L9012PLT1G ,MARKING 12p SOT-23
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L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G L9012QLT1G L9012RLT1G L9012SLT1G L9012 L9012PLT1G ,MARKING 12p SOT-23 | |
pnp 12Q
Abstract: L9012RLT1G MARKING 12p SOT-23 L9012QLT1G L9012PLT1G L9012SLT1G ,MARKING 12p SOT-23 12p sot-23
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L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G pnp 12Q L9012RLT1G MARKING 12p SOT-23 L9012QLT1G L9012PLT1G L9012SLT1G ,MARKING 12p SOT-23 12p sot-23 | |
2SC2607Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation |
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2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. |
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L9012PLT1G AEC-Q101 S-L9012PLT1G L9012PLT3G S-L9012PLT3G L9012QLT1G S-L9012QLT1G L9012QLT3G | |
New Jersey SemiconductorContextual Info: \yJ.£.i±£.u ij <z3s.ml-Conau.ctoi , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1909 DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE |
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2SA1909 -140V 2SC5101 New Jersey Semiconductor | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. |
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L9012PLT1G AEC-Q101 S-L9012PLT1G L9012PLT3G S-L9012PLT3G L9012QLT1G S-L9012QLT1G L9012QLT3G | |
Contextual Info: SIEMENS PNP Silicon AF Transistors BCX 51 . BCX 53 Features • • • • For AF driver and output stages High collector current Low coliector-emitter saturation voltage Complementary types: BCX 54 . BCX 56 NPN Type Marking Ordering Code (tape and reel) |
OCR Scan |
Q62702-C1847 Q62702-C1831 Q62702-C1857 Q62702-C1743 Q62702-C1744 Q62702-C1900 Q62702-C905 Q62702-C1753 Q62702-C1502 OT-89 | |
2SA1294
Abstract: 2SC3263 BAAAE
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OCR Scan |
2SA1294 2SC3263 BAAAE | |
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Contextual Info: X LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012XLT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION Device 1 Package Shipping 2 L9012xx X LT1G SOT-23 3000/Tape&Reel L9012XLT3G SOT-23 10000/Tape&Reel SOT-23 TO-236AB |
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L9012XLT1G L9012xx OT-23 3000/Tape L9012XLT3G 10000/Tape O-236AB) | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. |
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L9012PLT1G AEC-Q101 S-L9012PLT1G L9012PLT3G L9012QLT1G L9012QLT3G | |
Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1186 Silicon PNP Power Transistor i^ DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEO=-150V(Min) • Good Linearity of hFE |
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2SA1186 -150V 2SC2837 -25mA -150V; | |
transistor bI 340
Abstract: 2SA1106 PNP Transistor 2sc2581 2SA1106 tr/transistor bI 340
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2SA1106 -140V 2SC2581 -50mA; -140V; transistor bI 340 2SA1106 PNP Transistor 2sc2581 2SA1106 tr/transistor bI 340 | |
2SA1295
Abstract: 2SC3264 2SA1295 2SC3264
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OCR Scan |
2SA1295 MT-200 2SC3264 2SA1295 2SC3264 | |
B205A
Abstract: 2SA1186 2SC2837
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OCR Scan |
2SA1186 2SC2837 B205A 2SA1186 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012*LT1 PNP Silicon 3 COLLECTOR 3 1 1 BASE 2 SOT-23 TO-236AB 2 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 20 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO |
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L9012 OT-23 O-236AB) | |
MARKING 12p SOT-23
Abstract: 12p sot-23 ,MARKING 12p SOT-23 L9012 L9012PLT1 L9012QLT1
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L9012 OT-23 O-236AB) 3000/Tape MARKING 12p SOT-23 12p sot-23 ,MARKING 12p SOT-23 L9012PLT1 L9012QLT1 | |
2SA1215
Abstract: 2SC2921
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OCR Scan |
2SA1215 MT-200 2SC2921 | |
Contextual Info: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR n n mm SILICON PNP TRIPLE DIFFUSED TYPE i mmr du i m mi a m m HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : V q e gaj = 0.5V (Max.) at Iç = 4A |
OCR Scan |
2SD1411A |