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    PNP 10A Search Results

    PNP 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TTA004B
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet
    2SA1943
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet

    PNP 10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR  DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide


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    std888std888l-atqw-r209-028 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB936 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE  DESCRIPTION The UTC 2SB936 is a silicon PNP epitaxial planar type, it uses UTC’s advanced technology to provide the customers with high DC


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    2sb9362sb936l-tn3-t2sb936g-tn3-to-252+32sb936l-tn3-r2sb936g-tn3-rqw-r209-029 PDF

    2n2955

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    2n29552n2955l-t30-yqw-r205-004 PDF

    2N2955

    Abstract: 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS „ DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    2n29552n2955l-t30-yqw-r205-0042n295+2pnp transistor" 2n29552n2955 power transistor pnp PDF

    2N2955

    Abstract: 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


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    2n29552n2955l2n2955-t30-k2n2955l-t30-k+8qw-r205-0042n2955 to3t30ktransistor 2n29552n2955 pnppower transistor 2n2955pnp transistor" 2n29552n2955 power transistor pnp PDF

    2N6438

    Abstract: 2N6338 2N6340 2N6436 2N6437
    Contextual Info: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


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    2n63382n63402n64362n6437+22n6438vcc-80v PDF

    Contextual Info: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


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    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Contextual Info: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


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    zxtd4591e6ot23-6zxtd4591e6tacomplementary npn-pnp+7dual npn 500manpn sot23-6surface mount npn/pnp complementary transistortransistor ic 1a datasheet npnzxtd4591e6tc4591dsa003748 PDF

    Contextual Info: > In the majority o f low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


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    120ma350ma PDF

    log sheet air conditioning

    Abstract: MLP832 ZXTD3M832 ZXTD3M832TA ZXTD3M832TC
    Contextual Info: ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


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    zxtd3m832mlp832log sheet air conditioningzxtd3m832ta+1zxtd3m832tc PDF

    MLP322

    Abstract: ZXT4M322 ZXTD4M322TA ZXTD4M322TC
    Contextual Info: ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation PNP transistor offers extremely low on state


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    2N2955

    Contextual Info: UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


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    2n2955 PDF

    Contextual Info: Compensation for Linear Regulators In the majority o f low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


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    120ma350ma PDF

    power transistor 2n2955

    Abstract: 2n2955 transistor 2N2955 2n2955 Power Transistor PNP "PNP Transistor" 2n2955 2N2955 equivalent 2n2955 pnp power transistor UTC SILICON PNP 3A TRANSISTORS
    Contextual Info: UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


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    2n2955qw-r205-004power transistor 2n2955transistor 2n2955+52n2955 power transistor pnppnp transistor" 2n29552n2955 equivalent2n2955 pnp power transistorutc silicon pnp 3a transistors PDF

    ZXTD720MC

    Contextual Info: OBSOLETE - PLEASE USE ZXTD720MC ZXTD3M832 MPPSTM Miniature Package Power Solutions DUAL 40V PNP LOW SATURATION TRANSISTOR SUMMARY PNP VCEO= -40V; RSAT = 104m ; IC= -3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer


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    zxtd720mczxtd3m832mlp832 PDF

    PT10m

    Abstract: A1210 BTA1210J3
    Contextual Info: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low


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    c656j3bta1210j3-120vo-252+3ul94v-0pt10ma1210 PDF

    capacitor+100uf+1206+ESR

    Contextual Info: Compensation for Linear Regulators by Kieran OÕMalley In the majority of low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


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    120ma350macapacitor+100uf+1206+esr PDF

    Contextual Info: Application Note Compensation for Linear Regulators by Kieran OÕMalley In the majority of low drop and quasi low drop composite NPN-PNP regulators, the pass device or the pass device driver, is a lateral PNP transistor. The lateral PNP transistor is inherently a low frequency cutoff device with a poor transient response.


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    cs-8156 PDF

    2SA999L

    Abstract: 2SA999 trnsistor
    Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999L is a silicon PNP epitaxial type trnsistor designed for low Unftrmm OUTLINE DRAWING ^ 5.6MAX


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    2sa999l-100masc-43270hz+330khz2sa999trnsistor PDF

    NTE390

    Abstract: NTE391
    Contextual Info: NTE390 NPN & NTE391 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.


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    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR  APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.  FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    2sa20162sa2016g-ab3-r2sa2016l-tn3-r2sa2016g-tn3-r+4ot-89o-2522sa2016gqw-r208-018 PDF

    PNP SOT89

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR „ APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. „ FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    2sa20162sa2016l-ab3-r2sa2016g-ab3-r2sa2016l-tn3-r+62sa2016g-tn3-r2sa2016l-tn3-t2sa2016g-tn3-tot-89o-252pnp sot89 PDF

    NTE284

    Abstract: NTE284MP NTE285 NTE284 equivalent audio amplifier 100w transistor npn 100w amplifier pnp matched pair 100w audio amplifier
    Contextual Info: NTE284 NPN & NTE285 (PNP) Silicon Complementary Transistors Audio Amplifier Output Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications:


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    nte284nte285nte284mpnte285mp+6nte285mcpnte284 equivalentaudio amplifier 100wtransistor npn 100w amplifierpnp matched pair100w audio amplifier PDF

    2SA2016L-AB3-R

    Abstract: 2SA20 2SA2016 2SA2016-AB3-R
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS 1 * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES SOT-89 *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching


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    2sa2016ot-892sa2016l2sa2016-ab3-r+42sa2016l-ab3-r2005tqw-r208-0182sa20 PDF