PN100- P Search Results
PN100- P Price and Stock
Murata Manufacturing Co Ltd LQH32PN100MN0LPower Inductors - SMD 10 UH 10% |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LQH32PN100MN0L | 30,145 |
|
Buy Now | |||||||
Murata Manufacturing Co Ltd LQH2HPN100MGRLPower Inductors - SMD 1 UH 20% |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LQH2HPN100MGRL | 14,450 |
|
Buy Now | |||||||
Murata Manufacturing Co Ltd LQH2MPN100MGRLPower Inductors - SMD 10 UH 20% |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LQH2MPN100MGRL | 6,183 |
|
Buy Now | |||||||
Murata Manufacturing Co Ltd LQH43PN100M26LPower Inductors - SMD 10 UH 20% |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LQH43PN100M26L | 4,988 |
|
Buy Now | |||||||
Murata Manufacturing Co Ltd LQH44PN100MPRLRF Inductors - SMD 10 UH 20% |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
LQH44PN100MPRL | 3,599 |
|
Buy Now |
PN100- P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
PN100Contextual Info: PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • • This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 1 B SOT-23 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A |
Original |
PN100/PN100A/MMBT100/MMBT100A 300mA. OT-23 PN100/PN100A PN100/PN100A/MMBT100/MMBT100A PN100 | |
PN100A
Abstract: MMBT100 MMBT100A PN100 T092
|
OCR Scan |
PN100 PN100A MMBT100 MMBT100A OT-23 O-236 SD113D 405cià PN100A MMBT100A T092 | |
pnp pn100 transistor
Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
|
Original |
PN200 PN200A PN100, PN100A C-120 Rev270302D pnp pn100 transistor PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A | |
2n5172
Abstract: 2N517
|
OCR Scan |
2N5172 PN100 2n5172 2N517 | |
2N3704
Abstract: equivalent transistor 2n3704 PN100
|
Original |
2N3704 PN100 2N3704 equivalent transistor 2n3704 | |
2N3704Contextual Info: SEMICONDUCTOR 2N3704 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol |
OCR Scan |
2N3704 PN100 2N3704 | |
MPS8098
Abstract: PN100
|
Original |
MPS8098 PN100 MPS8098 | |
pn200
Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
|
Original |
QSC/L-000019 PN200 PN200A PN100, PN100A C-120 Rev270302D pn200 PN100 PN100A PN200A pnp pn100 transistor transistor pn100 | |
2N5172
Abstract: PN100
|
Original |
2N5172 PN100 2N5172 | |
PN100
Abstract: MMBT100 MMBT100A PN100A
|
Original |
PN100 PN100A MMBT100 MMBT100A OT-23 PN100 MMBT100 PN100A MMBT100A | |
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise |
Original |
PN200 PN200A PN100, PN100A C-120 Rev270302D | |
pn3643Contextual Info: SEMICONDUCTOR PN3643 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol |
OCR Scan |
PN3643 PN100 pn3643 | |
2N5172
Abstract: PN100
|
Original |
2N5172 PN100 2N5172 | |
Contextual Info: D825 Flanschdruckmittler mit Sondermaterialien Leistungsmerkmale Druckbereiche von 160 mbar bis 400 bar Medienberührter Bereich Sondermaterialien Temperatur -40°C ….400°C Class 150 bis 2500 NPS 2" bis 3" PN10 bis PN100 |
Original |
PN100 B16-5 | |
|
|||
TIS98Contextual Info: S E M IC O N D U C T O R TIS98 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS |
OCR Scan |
TIS98 PN100 TIS98 | |
2N3859AContextual Info: J*i L J I S 1 IméF * Discrete POW ER & Signal Technologies * I www»pw# SEMICONDUCTOR 2N3859A NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. |
OCR Scan |
2N3859A PN100 2N3859A | |
pn3565Contextual Info: S E M IC O N D U C T O R PN3565 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS |
OCR Scan |
PN3565 PN100 pn3565 | |
TIS97Contextual Info: S E M IC O N D U C T O R TIS97 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS |
OCR Scan |
TIS97 PN100 TIS97 | |
Contextual Info: S E M IC O N D U C T O R MPS8098 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS |
OCR Scan |
PS8098 MPS8098 PN100 | |
pn100Contextual Info: S fâM S C Q N Q U C T O É S * PN100 PN100A MMBT100 MMBT100A SOT-23 B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings4 |
OCR Scan |
PN100 MMBT100 PN100A MMBT100A PN100A OT-23 | |
Contextual Info: S E M IC O N D U C T O R PN3642 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS |
OCR Scan |
PN3642 PN100 | |
Contextual Info: D825 Flanged diaphragm seal with specific materials Main Features Pressure range from 160 mbar to 400 bar Wetted parts in specific materials Temperature -40°C ….400°C Class 150 to 2500 NPS 2" to 3" PN10 to PN100 DN50 to DN80 |
Original |
PN100 B16-5 B16-5 | |
2N5551 CJContextual Info: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100 |
OCR Scan |
oo404tiS 2N5551 CJ | |
1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
|
Original |
1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428 |