PN100- P Search Results

PN100

Contextual Info: PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • • This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 1 B SOT-23 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A

PN100A

Abstract: MMBT100 MMBT100A PN100 T092
Contextual Info: PN100 PN100A MMBT100 MMBT100A S O T -2 3 Marte: N A / N A 1 NPN General Purpose Amplifier PN100 I MMBT100 I PN100AI MMBT100A tu D iscrete P O W E R & S ig n a l Technologies National Semiconductor" This device is designed for general purpose amplifier applications

pnp pn100 transistor

Abstract: PN100 TRANSISTOR transistor pn100 pn200 PN100 PN100A PN200A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2n5172

Abstract: 2N517
Contextual Info: SEMICONDUCTOR ¡m 2N5172 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

2N3704

Abstract: equivalent transistor 2n3704 PN100
Contextual Info: 2N3704 2N3704 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol

2N3704

Contextual Info: SEMICONDUCTOR 2N3704 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

MPS8098

Abstract: PN100
Contextual Info: MPS8098 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

pn200

Abstract: PN100 PN100A PN200A pnp pn100 transistor transistor pn100
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N5172

Abstract: PN100
Contextual Info: 2N5172 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

PN100

Abstract: MMBT100 MMBT100A PN100A
Contextual Info: PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package EB C COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

pn3643

Contextual Info: SEMICONDUCTOR PN3643 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

2N5172

Abstract: PN100
Contextual Info: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: D825 Flanschdruckmittler mit Sondermaterialien Leistungsmerkmale „„ Druckbereiche von 160 mbar bis 400 bar „„ Medienberührter Bereich Sondermaterialien „„ Temperatur -40°C ….400°C „„ Class 150 bis 2500 „„ NPS 2" bis 3" „„ PN10 bis PN100 „„

TIS98

Contextual Info: S E M IC O N D U C T O R TIS98 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS

2N3859A

Contextual Info: J*i L J I S 1 IméF * Discrete POW ER & Signal Technologies * I www»pw# SEMICONDUCTOR 2N3859A NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.

pn3565

Contextual Info: S E M IC O N D U C T O R PN3565 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS

TIS97

Contextual Info: S E M IC O N D U C T O R TIS97 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS

Contextual Info: S E M IC O N D U C T O R MPS8098 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS

pn100

Contextual Info: S fâM S C Q N Q U C T O É S * PN100 PN100A MMBT100 MMBT100A SOT-23 B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings4

Contextual Info: S E M IC O N D U C T O R PN3642 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS

Contextual Info: D825 Flanged diaphragm seal with specific materials Main Features „„ Pressure range from 160 mbar to 400 bar „„Wetted parts in specific materials „„ Temperature -40°C ….400°C „„ Class 150 to 2500 „„ NPS 2" to 3" „„ PN10 to PN100 „„ DN50 to DN80

2N5551 CJ

Contextual Info: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A