PMGD8000LN Search Results
PMGD8000LN Datasheets (6)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PMGD8000LN | NXP Semiconductors | A new dimension in power; 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 | Original | 661.38KB | 2 | ||
| PMGD8000LN | Philips Semiconductors | Dual uTrenchMOS (tm) logic level FET | Original | 75.6KB | 12 | ||
| PMGD8000LN-01 | Philips Semiconductors | SMD, Dual UTrenchMOS Power Amp., 30V 125mA 0.2W, MOS-FET N-Channel enhanced | Original | 75.62KB | 12 | ||
| PMGD8000LN,115 | NXP Semiconductors | Dual uTrenchMOS logic level FET - Configuration: Dual N-channel ; ID DC: 0.125 A; Qgd (typ): 0.12 nC; RDS(on): 8000@4V13000@2.5V mOhm; VDSmax: 30 V; Package: SOT363 (SC-88); Container: Tape reel smd | Original | 75.59KB | 12 | ||
| PMGD8000LN,215 | NXP Semiconductors | PMGD8000LN - PMGD8000LN - Dual N-channel TrenchMOS logic level FET | Original | 75.47KB | 12 | ||
| PMGD8000LNT/R | Philips Semiconductors | Transistor Mosfet N-CH 30V 0.125A 6UMT T/R | Original | 75.6KB | 12 |
PMGD8000LN Price and Stock
Nexperia
Nexperia PMGD8000LNSmall Signal Field-Effect Transistor, 0.125A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMGD8000LN | 11,268 |
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Get Quote | |||||||
Nexperia PMGD8000LN,115Small Signal Field-Effect Transistor, 0.125A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMGD8000LN,115 | 3,616 |
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Get Quote | |||||||