PM6 11 Search Results

Contextual Info: PM6/PM8/PM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data Avalanche capability High thermal shock resistance Glass passivated for hermetic sealing Low reverse leakage currents Low forward voltage drop

G957

Abstract: GR-468-CORE OAT6223S-OLT-V2-10
Contextual Info: OKI 600M FSAN OLT Transceiver Specifications 1/ Document Number: PM1-1001-008-1 600M FSAN OLT Transceiver Specifications Document Number Revision DATE: Author Project Manager PM6-1001-008 DRAFT 0.5 May, 02, 2001 O. Kikuchi K. YUSA Part Number : OAT6223S-OLT-V2-10 / ES Board

Contextual Info: PM6/PM8/PM0 Axial Leaded Hermetically Sealed Standart Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 600V - 1000V IF = 2.0A trr = 3µS IR = 1.0µA Avalanche capability High thermal shock resistance Glass passivated for hermetic sealing

STK600

Abstract: FSI-150 Atmel STK600 499 P44 20 PJ7D BLM21AG102SN1D N-7075 NC7SZ57P6X NC7SZ58P6X
Contextual Info: 5 4 3 GND PF0 PF2 PF4 PF6 GND PG0 PG2 PG4 PG6 GND PH0 PH2 PH4 PH6 PB1 B PB3 GND XTAL1 XTAL2 GND TOSC1 TOSC2 RESET GND 1 2 3 6 5 4 6 5 4 PB2 C1 100n 499-P44-20 BLM21AG102SN1D GND PL0 PL2 PL4 PL6 GND GND VTG PD1 PD3 PD5 PD7 GND PM0 PM2 PM4 PM6 VTG PE1 PE3 PE5

P10TG-243R3E2

Contextual Info: P10TG-xxxxE/Z2:1 H35 LF PM6-SERIES Rev.09-2009 2 Watt 2:1 Wide Input Regulated DIP24 Plastic Case 1.5 or 3.5 KV DC I/O Isolation SINGLE and DUAL Output Continuous Short Circuit Prot. Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070

Contextual Info: P14TG-xxxxE/Z2:1 H35 LF PM6-SERIES Rev.09-2009 3 Watt 2:1 Wide Input Regulated DIP24 Plastic Case 1.5 or 3.5 KV DC I/O Isolation SINGLE and DUAL Output Continuous Short Circuit Prot. Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070

Contextual Info: R E ^ T I F I E R ’ u p to TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com January 29, 1998 QUICK REFERENCE DATA V r = 6 0 0 - 1000V If = 2 .0 A trr = 2 .5 p S Ir = 1.0m A PM6 PM8 PMO 1 k V ’ 2 A ’ 2 - 5 ii s AXIAL LEADED HERMETICALLY SEALED

Contextual Info: T H IS COPY IS PROVIDED ON A RESTRICTED B ASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. DI MENS IONS P A N D U 1T PART # WIRE SIZE PREFI X PK PM 1 -P10 -c -M PM2-P10 -C PM6-P10 -L -M -D mm* t0.5 A t0,3 mm ±0,4 B DIA.

diode 36b3

Abstract: micron sram MS-026
Contextual Info: OBSOLETE ADVANCE 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B3, MT58LC64K32B3, MT58LC64K36B3 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter FEATURES • • • • • • • • • • • • • • • Fast access times: 8.5ns, 9ns, 10ns and 11ns

Contextual Info: M I ir S n M MT58LC32K32/36B3 32K X 32/36 SYNCBURST SRAM SYNCHRONOUS SRAM 32K x 32/36 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 8 .5 ,9 ,1 0 and 11ns

Contextual Info: PRELIMINARY 1, 2 MEG x 32 DRAM DIMMs DRAM MODULE MT2LD132U X MT4LD232U(X) FEATURES • JEDEC pinout in a 100-pin, dual in-line memory module (DIMM) • 4MB (1 Meg x 32) and 8MB (2 Meg x 32) • State-of-the-art, high-performance CMOS silicon-gate process

Oscilloquartz

Abstract: OCXO8673 Crystal 8.672 OSCILLOQUARTZ S.A OCXO 406 oscilloquartz 4.096
Contextual Info: SC-cut Product Description The modular design offers the flexibility to accomodate 3rd overtone crystal resonator to enhance long term stability few parts in 10-10 per day and features a sine or TTL-compatible output. Furthermore, industry standard footprint

Contextual Info: PD -9.1649 International IQR Rectifier IRF7526D1 PRELIMINARY FETKY M O S F E T and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

DIODE F7 SMD

Abstract: smd diode schottky code marking 2F Diode smd code sm
Contextual Info: P D -9 .1 6 4 8 International IQR Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low Vp Schottky Rectifier Generation V Technology Micro8 Footprint VDSS = -20V RDS on = 0 .2 7 Q

MT48LC1M16A1

Abstract: MT48LC1M16A1TG-8A
Contextual Info: PRELIMINARY 16 MEG: x16 SDRAM MT48LC1M16A1 S - 512K x 16 x 2 banks SYNCHRONOUS DRAM FEATURES PIN ASSIGNMENT Top View • PC100-compliant functionality • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be

smd diode GW

Abstract: diode ESM 315 K451
Contextual Info: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =

Y32P

Abstract: intel 80.82 mt5*32 micron sram 100-PIN MS-026
Contextual Info: OBSOLETE 64K x 18, 32K x 32/36 3.3V I/O, PIPELINED, SCD SYNCBURST SRAM MT58LC64K18D8, MT58LC32K32D8, MT58LC32K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect FEATURES • • • • • • • • • • • • • •

BCD 9042

Abstract: ZM08
Contextual Info: ADVANCE 8 MEG x 32 SDRAM DIMM SYNCHRONOUS DRAM MODULE MT4LSDT832U FEATURES • JEDEC pinout in a 100-pin, dual in-line memory module DIMM • 32MB (8 Meg x 32) • Utilizes 100 MHz SDRAM components • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive

micron sram

Abstract: 100-PIN MS-026 MT58LC128K18C5LG-10
Contextual Info: OBSOLETE 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect FEATURES • • • • • • • • • • • • •

micron sram

Abstract: 100-PIN MS-026 MT58LC128K18D8LG-11 mt5*32
Contextual Info: OBSOLETE 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED, SCD SYNCBURST SRAM MT58LC128K18D8, MT58LC64K32D8, MT58LC64K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect FEATURES • • • • • • • • • • • • •

Contextual Info: PRELIMINARY MICRON I 8, 16 MEG X 72 SDRAM DIMMs TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSDT872A MT18LSDT1672A FEATURES • PCIOO-compliant, includes concurrent Auto Precharge • JEDEC-standard 168-pin, dual in-line memory module DIMM • Nonbuffered

Contextual Info: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K

KC102

Contextual Info: |v i i c : 64K X 18, 32K x 32/36 3.3V I/O, PIPELINED, SCD SYNCBURST SRAM r o n MT58LC64K18D8, MT58LC32K32D8, MT58LC32K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • • • • • • • •