PM50 Search Results

Contextual Info: PM50CLB120 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 50 Amperes/1200 Volts A D E F G L AB (4 PLACES) H J K J J K K V V TERMINAL CODE M 1 VUPC K 2 UFO 3 UP 4 VUP1

Contextual Info: PM50RLA060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter + Brake 50 Amperes/600 Volts P A E TERMINAL CODE D F G 1 VUPC L 2 UFO M H 3 UP J J J K 4 VUP1 K 5 VVPC K K 6 VFO

Contextual Info: PM50CLA060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 50 Amperes/600 Volts P A E TERMINAL CODE D F G 1 VUPC L 2 UFO M H 3 UP J J J K 4 VUP1 K 5 VVPC K K 6 VFO 7 VP

Contextual Info: MATERIAL DECLARATION SHEET Material PM3316H/PM5022H Product Line SMD POWER INDUCTOR Date No. 1 2 3 4 5 2006/08/31 Construction element Core Solder Base Wire Adhesive Headquarters Riverside CA Material group Ferrite Mn-Zn Series Bar Solder Material Weight [g]

Low Capacitance MOS FET

Abstract: Hitachi DSA00103 DIODE DATABOOK PM5050J dr 25 diode
Contextual Info: PM5050J Silicon N-Channel Power MOS FET Module { INCLUDEPICTURE "RG External:F-Drive PC shared :hitachi.eps" \* MERGEFORMAT } November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance

Contextual Info: PM50RLB060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter + Brake 50 Amperes/600 Volts A D E F G L AB (4 PLACES) J K J J K K V V TERMINAL CODE M H 1 VUPC K 2 UFO 3 UP

pwm inverter circuit

Abstract: PM50RSA060 IC AB-008
Contextual Info: PM50RSA060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts A B U Q R Z U Z AB 12 3 4 U 5678 9 11 W 13 15 17 19 10 12 AB (15 TYP.) B M F E C

E80276

Abstract: PM50B5LB060
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LB060 FLAT-BASE TYPE INSULATED PACKAGE PM50B5LB060 FEATURE a Adopting new 5th generation IGBT CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C

Contextual Info: PM50B5LA060 PM50B5LB060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Photo Voltaic IPM H-Bridge + 1 Chopper 50 Amperes/600 Volts Package A P TERMINAL CODE A D E F 1 VUPC G L 2 UFO 3 UP M H J J 4 VUP1 J K 5 VVPC K K

Contextual Info: PM50CLB120 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 50 Amperes/1200 Volts A D E F G L AB (4 PLACES) H J K J J K K V V TERMINAL CODE M 1 VUPC K 2 UFO 3 UP 4 VUP1

Hitachi DSA001652

Contextual Info: PM50100K Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Hitachi DSA001652

Contextual Info: PM5075J Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PM50RLB120

Abstract: E80276
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM50RLB120 フラットベース形 絶縁形 PM50RLB120 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.9V ➁ CSTBTチップのTj検出による過熱保護を

E80276

Abstract: PM50CSE060
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM50CSE060 フラットベース形 絶縁形 PM50CSE060 特長 ➀ 第 4 世代 リファイン 1µm ルールプレーナ IGBT チップ採用 VCE sat = typ1.7V ➁ 新設計 FWDi 採用

PM50RL1B060

Abstract: pm50rl1
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM50RL1B060 フラットベース形 絶縁形 PM50RL1B060 特長 インバータ＋ブレーキ＋駆動・保護回路内蔵 ① 第5世代フルゲートタイプCSTBTTM搭載 ② CSTBTTMのチップ表面温度を検出する過熱保護を採用

PM50CL1B120

Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM50CL1B120 フラットベース形 絶縁形 PM50CL1B120 特長 インバータ＋駆動・保護回路内蔵 ① 第5世代フルゲートタイプCSTBTTM搭載 ② CSTBTTMのチップ表面温度を検出する過熱保護を採用

Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM50CL1B060 フラットベース形 絶縁形 PM50CL1B060 特長 インバータ＋駆動・保護回路内蔵 ① 第5世代フルゲートタイプCSTBTTM搭載 ② CSTBTTMのチップ表面温度を検出する過熱保護を採用

E80276

Abstract: PM50RLB060
Contextual Info: 三菱半導体〈インテリジェントパワーモジュール〉 PM50RLB060 フラットベース形 絶縁形 特長 ➀ 第 5 世代 1µm ルール IGBT（CSTBT）チッ プ採用 Vce sat (@Tj=125℃)=typ.1.5V ➁ CSTBTチップのTj検出による過熱保護を

Contextual Info: PM5075J Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

PM5000

Abstract: PM5300 METSEPM5320 METSEPM5110
Contextual Info: PowerLogic PM5000 series Basic multi-function meters Technical datasheet Basic multi-function metering PM5000 Series Functions and characteristics PB111776 PowerLogic PM5100, PM5300 and PM5500 series The PowerLogic™ PM5000 power meter is the ideal fit for cost management

PM50CSE120

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM50CSE120 PM50CSE120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50CSE120 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM50CSE060

Abstract: IC 7405
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM50CSE060 PM50CSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50CSE060 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

PM50RSE060

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM50RSE060 PM50RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM50RSE060 FEATURE a Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

upc 50-120

Abstract: PM50CSD120 1000 watt ups circuit diagrams PM50120
Contextual Info: PM50CSD120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase IGBT Inverter Output 50 Amperes/1200 Volts A B U R U Y (4 PLACES) U AB AD 1 234 5678 9 11 10 12 14 16 18 AD B M E C P M 1. 2. 3.