PLA POWER RELAY Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm 6.0±0.2 1.0±0.1 1.5±0.1 3.4±0.3 1.4±0.1 0.95±0.15 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit

ZTX338

Abstract: ZTX452 MPSA05 MPSA06 MPSA55 MPSA56 ZTX337 ZTX450 ZTX451 ZTX453
Contextual Info: MEDIUM POWER T A B LE 7 - N PN /PN P SILICO N PLA N A R M EDIUM POW ER T R A N S IS T O R S The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities in excess of 500 mW at

Contextual Info: 7 ^ 2 3 7 Q O S 'ï a M 'i 7 • ^ ' 3 f Z T SGS-THOMSON ^ 7 # Ij*G »[LI O T( q K S S G S-THOMSON 3 - 0 ° ) 2N5655 2N5656-2N5657 3ÜE D HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The 2N5655, 2N5656 and 2N 5657 are silicon epi­ taxial planar NPN transistors in Jedec TO -126 pla­

relais reed celduc

Abstract: PLA relay Celduc pla 10 P625 SG24 SG26 230v relais Celduc pla 100
Contextual Info: S/DIV/SG2xxxxx/A/14/03/2000 page 1 /3 F/GB RELAIS STATIQUES MONOPHASES AVEC UNE COMMANDE PAR INTERRUPTEUR EXTERIEUR ISOLE SG2 10 ou/or 40 A 230 ou/or 400 VAC EXTERNAL SWITCH CONTROLED SINGLE PHASE SOLID STATE RELAYS Les relais SG2 sont des relais statiques de puissance pour réseau alternatif . Ces relais permettent la commutation de charges monophasés sans nécessité de tension de commande,simplement en utilisant un contact extérieur qui sera isolé du secteur et travaillera en

c838 transistor

Abstract: transistor c829 c835 transistor c829 c829 transistor c836 c829 data c832 C833 mcl600
Contextual Info: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

PLA relay

Abstract: AN6263N
Contextual Info: ICs for Cassette, Cassette Deck AN6262N, AN6263N Pause Detection Circuits of Radio Cassette, Cassette Deck • Overview Unit : mm The AN6262N and the AN6263N are the pause detection integrated circuits which select the program on the cassette tape. In the ordinal method, tape speed is different depending on the PLAY and FF/REW, and also nonsignal time between the programs is different. Therefore,

transistor c331

Abstract: c337 transistor transistor c337 transistor c343 c331 transistor mcs6200 MCT2E CIRCUIT DIAGRAM c331 transistor dip type MCS-6200 Transistor c340
Contextual Info: 112 O p to iso lato rs~ A* * W A, PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

82S100

Abstract: application of programmable array logic 22V10 complete details signetics 82s100 pla macrocells
Contextual Info: Xilinx has acquired the entire Philips CoolRunner Low Power CPLD Product Family. For more technical or sales information, please see: www.xilinx.com XPLA Architecture White Paper Mark Aaldering Philips Semiconductors Programmable Products Group Albuquerque, NM USA

Optoisolator mct6

Abstract: MCL611 C858 mcs6200 MCT8 opto MCT8 opto switch mct6 opto isolator IC 4N25 triac GI 4N25 two transistor forward
Contextual Info: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

pla relay

Abstract: PHD 73 PLD-10 TS16 IDT82V2108 JT-G706
Contextual Info: T1 / E1 / J1 OCTAL FRAMER FEATURES • • • • • • • • • • • • • • • • • • PRELIMINARY BRIEF DATA SHEET IDT82V2108 APPLICATIONS Eight framers in a single chip supporting T1, E1, J1 or unframed data receive and transmit. System interface compatible with Mitel ST bus, AT&T CHI bus and

transistor C372

Abstract: transistor C368 c372 transistor transistor c914 transistor c367 scr optoisolator c371 transistor c914 c368 transistor MCL611
Contextual Info: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

c879 transistor

Abstract: TRANSISTOR C875 C880 transistor transistor c877 c877 transistor c871 C875 transistor transistor C870 c879 MCL611
Contextual Info: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

transistor c111

Abstract: C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600
Contextual Info: 112 A* O p * t o is W A, l a t o o r s~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

transistor c828

Abstract: c828 npn transistor C828 transistor free C828 c828 npn NPN transistor c828 hfe c828 npn c828 C828 transistor c828 power rating
Contextual Info: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

Contextual Info: AN6780, AN6780S General Purpose Long Interval Timers • Overview AN6780 Unit : mm The AN6780 and AN6780S are ICs designed for general purpose long interval timers. They consists of an oscillator, frequency divider flip-flop 15steps , output circuit, and power

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK3025 Silicon N-channel power MOS FET • Package ■ Features • Code U-DL • Pin Name 1: Gate 2: Drain 3: Source M Di ain sc te on na tin nc ue e/ d • Avalanche energy capability guaranteed

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed

Contextual Info: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to

Contextual Info: Power Transistor Arrays PUB4122 PU4122 , PUB4422 (PU4422) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features • Built-in zener diode (30 V) between collector and base • Small variation in withstand pressure

Contextual Info: Power Transistor Arrays PUA3124 PU3124 Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features 20.2±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60±10 V Collector-emitter voltage (Base open)

Contextual Info: Power Transistor Arrays PUA3122 PU3122 Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features 20.2±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30±5 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open) VCEO 100

Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage