PJ 50 DIODE Search Results

TH7815AC

Abstract: TH7815 TH7815A 0896B e2v ccd e2v linear ccd pj 71 diode
Contextual Info: TH7815A 50 MHz 4096 Linear CCD Datasheet 1. Features • • • • • • • • Data Rate up to 50 MHz 2 Outputs at 25 MHz Each Pixel Size: 10 µm x 10 µm (10 µm Pitch) 300 to 1100 nm Spectral Range High Sensitivity and Lag Free Photodiodes Very Low Noise (30 pJ/cm2 Noise Equivalent Illumination)

TH7814A

Abstract: TH7813 TH7813A TH7814 BG38 TH7813ACC TH7814ACC
Contextual Info: Features • Data Rate up to 50 MHz 2 Outputs at 25 MHz Each • Pixel Size: 10 µm x 10 µm (10 µm Pitch) • 300 to 1100 nm Spectral Range • High Sensitivity and Lag-free Photodiodes • Very Low Noise (30 pJ/cm2 Noise Equivalent Illumination) • Antiblooming

BG38

Abstract: TH7815ACC
Contextual Info: Features • • • • • • • • Data Rate up to 50 MHz 2 Outputs at 25 MHz Each Pixel Size: 10 µm x 10 µm (10 µm Pitch) 300 to 1100 nm Spectral Range High Sensitivity and Lag Free Photodiodes Very Low Noise (30 pJ/cm2 Noise Equivalent Illumination)

DG5143CJ

Abstract: simple switch block diagram 15-V DG5143
Contextual Info: S ilic o n ix DG5143 A M e m b e r o f th e T e m i c G r o u p Low-Power, High-Speed CMOS Analog Switch Features Benefits Applications • ± 15-V Input R ange • O n-Resistance: 50 Q • Fast Switching Action— toN* 100 ns • Low Power— Pj^: <350 ¡J.W

pj marking

Abstract: diode pj 70 pj 35 diode diode pj pj-25 diode pj 80 PJ 039 Diode marking code PJ DPG30P300PJ
Contextual Info: DPG 30 P 300 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 DPG 30 P 300 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

diode pj 70

Abstract: PJ 75 MM diode pj 70 diode DPG10P400PJ PJ diode diode pj IXYS DS 145 pj 35 diode
Contextual Info: DPG 10 P 400 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 DPG 10 P 400 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

DPG30P300PJ

Abstract: diode pj 70 pj 35 diode diode pj pj 50 diode BY 255 diode
Contextual Info: DPG 30 P 300 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 DPG 30 P 300 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DPG 10 P 400 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

pj diode

Abstract: Diode marking code PJ PJ 75 pj 50 diode marking code pj diode pj marking code pj diode
Contextual Info: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current

diode pj

Abstract: pj 50 diode marking code pj BAW56WS PJ diode marking code pj diode PJ 75 MM diode
Contextual Info: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current

CODE PJ

Abstract: marking code pj diode pj BAW56WS PJ diode pj 50 diode marking code pj diode
Contextual Info: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VR 75 V VRRM 85 V IF 125 mA Repetitive Peak Forward Current

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

pj 89 diode

Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Contextual Info: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­

B063008

Abstract: HV3922
Contextual Info: HV3922 High Voltage PIN Diode Driver Features General Description ► ► ► ► ► ► ► The HV3922 is a monolithic, high voltage quad-output driver that is designed to be used in conjunction with the Supertex VN2222NC, a separate N-channel DMOS FET quad array, whose device characterics

di292

Abstract: pj 26 diode MJ-05 ci3022 ci470 SCM30 ci573 CMOS spice model di2910 RI57
Contextual Info: Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:

HV3922C

Abstract: HV3922 HV3922DJ VN2222NC
Contextual Info: HV3922 High Voltage PIN Diode Driver Features General Description ► ► ► ► ► ► ► The HV3922 is a monolithic, high voltage quad-output driver that is designed to be used in conjunction with the Supertex VN2222NC, a separate N-channel DMOS FET quad array, whose device characteristics

Contextual Info: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community MSP430FR5739, MSP430FR5738, MSP430FR5737, MSP430FR5736, MSP430FR5735 MSP430FR5734, MSP430FR5733, MSP430FR5732, MSP430FR5731, MSP430FR5730 www.ti.com SLAS639J – JULY 2011 – REVISED JUNE 2014

Contextual Info: HV3922 High Voltage PIN Diode Driver Features General Description ► ► ► ► ► ► ► The HV3922 is a monolithic, high voltage quad-output driver that is designed to be used in conjunction with the Supertex VN2222NC, a separate N-channel DMOS FET quad array, whose device characterics

SLAS639C

Abstract: MSP-EXP430FR5739
Contextual Info: MSP430FR573x MSP430FR572x www.ti.com SLAS639C – JULY 2011 – REVISED MARCH 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • Embedded Microcontroller – 16-Bit RISC Architecture up to 24-MHz Clock – Wide Supply Voltage Range 2 V to 3.6 V – -40°C to 85°C Operation

Contextual Info: MSP430FR573x MSP430FR572x SLAS639A – JULY 2011 – REVISED OCTOBER 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • 2 • • • • • Embedded Nonvolatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC

Contextual Info: MSP430FR573x MSP430FR572x www.ti.com SLAS639H – JULY 2011 – REVISED SEPTEMBER 2013 Mixed Signal Microcontroller FEATURES 1 • 23 • Embedded Microcontroller – 16-Bit RISC Architecture up to 24-MHz Clock – Wide Supply Voltage Range 2 V to 3.6 V

6p111

Abstract: pj 69 SMD diode
Contextual Info: MSP430FR573x MSP430FR572x www.ti.com SLAS639D – JULY 2011 – REVISED AUGUST 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • 23 • Embedded Microcontroller – 16-Bit RISC Architecture up to 24-MHz Clock – Wide Supply Voltage Range 2 V to 3.6 V – -40°C to 85°C Operation

Contextual Info: MSP430FR573x MSP430FR572x www.ti.com SLAS639H – JULY 2011 – REVISED SEPTEMBER 2013 Mixed Signal Microcontroller FEATURES 1 • 23 • Embedded Microcontroller – 16-Bit RISC Architecture up to 24-MHz Clock – Wide Supply Voltage Range 2 V to 3.6 V

SLAS639A

Contextual Info: MSP430FR573x MSP430FR572x SLAS639A – JULY 2011 – REVISED OCTOBER 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • 2 • • • • • Embedded Nonvolatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC