PJ 4012 Search Results

cny57a

Abstract: CNY57 CNY57AU 4N25 PHILIPS "sot-90B" CNY57U Philips 4N26 sot90b sot-90B 80T-90B
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • ^53=131 Gült^S1! 1 ■ 'P'+l-Pj 76 Optoelectronic Devices OPTOCOUPLERS PACKAGE OUTLINE TYPE CURRENTTRANSFER RATIO CTR % AT If Vce MIN mA VOLTS V|ORW d.c. VOLTS v C e (s a t) MAX ATff VOLTS mA fc AT mA / i* ton^off TYPICAL

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)

nas1805

Abstract: nas1291c3m nas1291 nas1791 NAS1792 NAS1804 TORQUE-TENSION MANUAL No. 8804 eslok NAS1474 NASM45938
Contextual Info: MACLEAN-ESNA Precision Fasteners Catalog 9203 611 Country Club Road Pocahontas, Arkansas 72455 SALES: 1-800-331-6469 FAX: 1-870-892-8938 E-mail: Fastener@MacLean-Fogg.com A MACLEAN-FOGG COMPANY The ESNA Story The ESNA® story began in 1927, when a young engineer named Carl Arthur Swanstrom

63a30

Abstract: RF1K4915796
Contextual Info: HH BF1K49157 H A R R IS S E M I C O N D U C T O R ^ Rated, Single N-Channel JXl&tëFÉt Enhancement Mode Power MOSFET 'no* ne V* January 1997 4- ¡V OÏ v ' Features Description • 6.3A.30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

LTE-3201

Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
Contextual Info: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S

SM5808

Abstract: tsx micro
Contextual Info: rupe SMS SOS 8 x 8 bit Multipliei— Accumulator NIPPON PRECISION CIRCUITS LTD. • General Th e SM5808 i s a h ig h s p e e d 8 x 8 b i t p a r a l l e l m u lt i p i i e r - a c c u m u l a t o r w h ic h o p e r a t e s a t 4 5 n S c y c l e t im e 22MHz m u l t i p i y - a c c u m u l a t e r a t e .

Contextual Info: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S

sm580

Abstract: Q3230
Contextual Info: rupe S M 5 Q O O 8 x 8 bit Multipiier-Accumulator NIPPON PRECISION CIRCUITS LTD. • G en eral T h e SM5808 i s a h i g h s p e e d 8 x 8 b i t p a r a l l e l m u l t i p l i e i — a c c u m u l a t o r w h i c h o p e r a t e s a t 45n S c y c l e t i m e 22M Hz m u l t i p i y - a c c u m u l a t e r a t e .

Contextual Info: — aSSSfwus o,FFusEpTYPE— MG30G6EL9 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hpE=100 Min. (Ic=30A)

MG150N2YS1

Abstract: mg150n2ys
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG150N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed tf=l.Ows Max. trr=0.5us(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One Package. . The Electrodes are Isolated from Case.

Contextual Info: N AUER PHILIPS/DISCRETE BSE D • bbSBTBl DOlbBOfl 5 ■ X - 2 S '- O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating * REPETITIVE N O N -R EP ETtT IV E PEAK PEAK ON-STATE R EVER SE VOLTAGE C U R R EN T lTsHmax.t2) V RHiyimax. RATE O F

MG300N1

Abstract: MG300N1US1 pj 889 diode mg300n
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG300N1US1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=l.Oys Max. trr=0-5|is(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) .Enhancement-Mode . The Electrodes are Isolated from Case.

Contextual Info: S M A L L S I G N A L SPECIAL T R A N S I S T O R S TYPES CASES : TO- 18_a dill! / a SI S.A.i .3_TO- 39_ TO- 9 2 ri / -h 0“ <JC CASE : T O - 10 Q 2N 4983 : E S QI V ALENT DI AGRAM FAST 4 ULTRAFAST SWITCHING TRANSISTORS

pj 83 diode

Abstract: Diode Marking WA
Contextual Info: Schottky Barrier Diode Diode Module Wtm D180SC4M OUTLINE 40 V 180A Feature V 3. — I \j • • High lo Rating-Module-PKG • Low V f • Small B jc • f iV f Main Use • • • • • DC/DC Z\yjï-S S • • ’ IC x X i? High Power Switching Regulator

pj 899 diode

Abstract: B897 K9814 k1917 JESD22-B100 B953 L9833 N9808 P9812 9806
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1999 TABLE OF CONTENTS Section I: Introduction Section II:

h9910

Abstract: K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 2000 TABLE OF CONTENTS Section I: Introduction Section II:

k1917

Abstract: L9726 JESD22-B100 9806 cga 624 Monitor Hyundai Service TSOP 173 g JEDEC-22-A113 K1573 74FST163245
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1999 TABLE OF CONTENTS Section I: Introduction Section II:

K2837

Abstract: h9910 pj 899 diode l9845 k1917 B897 74100 ipc 9850 74FST163245 L9726
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:

h9910

Abstract: 74FST163245 B897 PL84 K2837 9806 h9910 datasheet ipc 9850 pj 899 diode JEDEC-22-A113-A
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:

Contextual Info: ADV HI CRO TELECCINI 13E 0 £o2S?5S? Am7968/Am7969 00ak35<t 3 | ' T - l S ~37-e5 TAXIchip Integrated Circuits (Transparent Asynchronous Xmitter - Receiver interface PRELIMINARY • Drive coaxial cable directly or Interface with fiber optic data links • 32-100 Mbps (4-12.5 Mbytes/sec data throughput

OA-5 LN

Contextual Info: T O SH IB A MG200Q1ZS40 MG200Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) • Low Saturation Voltage • VcE(sat) = 4*0V (Max.)

L9939

Abstract: k9920 h9910 K1917 L9924 K2837 B897 k3296 JEDEC-22-A113-A K9926
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1999 TABLE OF CONTENTS Section I: Introduction Section II:

h9910

Abstract: h9940 L9939 z9939 l9923 hyundai 9734 ram K9930 l9934 733W K2837
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS January 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT January 2000 TABLE OF CONTENTS Section I: Introduction Section II:

L9939

Abstract: B897 k9920 L9924 k1917 JESD22-B100 K9928 K2837 P9848 h9910
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1999 TABLE OF CONTENTS Section I: Introduction Section II: