PIN SWITCH MMIC KA Search Results
PIN SWITCH MMIC KA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CS-DSDMDB09MF-002.5 |
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Amphenol CS-DSDMDB09MF-002.5 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft | |||
CS-DSDMDB09MM-025 |
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Amphenol CS-DSDMDB09MM-025 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft | |||
CS-DSDMDB15MM-005 |
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Amphenol CS-DSDMDB15MM-005 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 5ft | |||
CS-DSDMDB25MF-50 |
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Amphenol CS-DSDMDB25MF-50 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Female 50ft | |||
CS-DSDMDB37MF-015 |
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Amphenol CS-DSDMDB37MF-015 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Female 15ft |
PIN SWITCH MMIC KA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SONY CXG1039TN High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic Description 10 pin TSSOP Plastic The CXG 1039TN is a high isolation absorptive SPDT (Single Pole Dual Throw) switch MMIC used in PCS handsets. This IC is designed using the Sony’s GaAs J-FET |
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CXG1039TN 1039TN 10PIN | |
Contextual Info: SONY CXG1045N High Power DPDT Switch for GSM Description The CXG1045N is a DPDT Dual Pole Dual Throw antenna switch MMIC used in personal communication 8 pin SSOP (Plastic) handsets such as GSM, GSM1800 or dualband. This IC is designed using the Sony's GaAs J-FET process. |
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CXG1045N GSM1800 CXG1045N 900MHz 38dBm 37dBm GSM900 GSM900/GSM1800 | |
Contextual Info: 26-40 GHz GaAs MMIC SPDT PIN Switch EBAlpha AP640R2-00 Features Chip Outline • Broad Bandwidth, 26-40 GHz ■ Low Loss, <1.1 dB ■ High Isolation, >28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, <2 ns ■ High Power Handling Capability, 37 dBm Peak, 33 dBm CW |
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AP640R2-00 8/98A | |
AP640R2-00
Abstract: gaas spdt switch ka band mmic pin switch mmic ka T1820
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AP640R2-00 8/98A gaas spdt switch ka band mmic pin switch mmic ka T1820 | |
AP640R2-00Contextual Info: GaAs MMIC SPDT PIN Switch 26-40 GHz Reflective AP640R2-00 Features • Broad Bandwidth, 26 - 40 GHz ■ Low Loss, < 1.1 dB ■ High Isolation, > 28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, < 2 ns ■ Low Power Consumption, < 25 mA Total at -5V ■ High Power Handling Capability, 37 dBm Peak, |
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AP640R2-00 AP640R2-00 35GHz | |
Signal Path Designer
Abstract: PIN diode switch 3a "pin diode" DS025 DS0602
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DS0352 DS0602 DS0842 DS0252 DS0052 DS0602 100C1003 DS0800 DS0842 Signal Path Designer PIN diode switch 3a "pin diode" DS025 | |
S0800Contextual Info: SELECTING THE RIGHT RF SWITCH Ed Blair, Kalyan Farrington and Kelvin Tubbs Daico Industries, Inc. Rancho Dominguez , C'A A fte r the system design has been blocked out, a fte r the individual com ponent specifications to achieve the overall system ’s performance have been identified, the crucial mom ent arrives.actual components selection! Amplifiers, filters, |
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DS0252 DS0052 DS0602 100C1003 DS0800 DS0842 S0800 | |
GaAs MESFET
Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
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DC-18 MA01801 GaAs MESFET SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch | |
TGS4304Contextual Info: May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw SPDT PIN monolithic switch designed |
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TGS4304 TGS4304 33dBm | |
Contextual Info: May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw SPDT PIN monolithic switch designed |
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TGS4304 TGS4304 33dBm 30ming | |
MMIC SWITCH
Abstract: RTPA5250-130
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RTPA5250-130 RTPA5250-130 MMIC SWITCH | |
IC 994
Abstract: TGS4304
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TGS4304 TGS4304 33dBm IC 994 | |
S3330
Abstract: TGS4304
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TGS4304 TGS4304 33dBm TGS4304wer S3330 | |
AP640R2-00
Abstract: Ka-band TGS4302 DSA00265953
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TGS4302 AP640R2-00 Ka-band TGS4302 DSA00265953 | |
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Contextual Info: May 2, 2008 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss < 4ns Switching Speed |
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TGS4302 | |
TGS4302
Abstract: 10S21
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TGS4302 TGS43ns. TGS4302 10S21 | |
4 digit dot matrix display
Abstract: color decoder TRANSISTOR dual infrared transistor njm2063 infrared receiver led infrared remote switch NJM4556 NJU9202B NJM2065A Infrared receiver module
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NJM1372A NJM2048 NJM2049 NJM2063 NJM2063A NJM2065 NJM2065A NJM2066 NJM2067 NJM2075A 4 digit dot matrix display color decoder TRANSISTOR dual infrared transistor njm2063 infrared receiver led infrared remote switch NJM4556 NJU9202B NJM2065A Infrared receiver module | |
RFID 5.8Ghz
Abstract: HMC189MS8 HMC264CB1 HMC265CB1 HMC266 HMC280MS8G HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch
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DC-40 HMC280MS8G HMC189MS8 RFID 5.8Ghz HMC264CB1 HMC265CB1 HMC266 HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch | |
univision technology
Abstract: Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G
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HMC258CB1 HMC264CB1 HMC265CB1 univision technology Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G | |
30GHz diode
Abstract: AP640R2-00 TGS4302-EPU
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TGS4302-EPU AP640R2-00 30GHz diode TGS4302-EPU | |
mmds down converter
Abstract: HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G
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OC-48 OC-192 mmds down converter HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G | |
philips rf manual
Abstract: jedec JESD625-a Philips varicap tef6860 TEF6860HL philips catv 860 amplifier ic small signal transistor philips manual rf push pull mosfet power amplifier TEA5767 TEF6901H
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Contextual Info: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features • Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads |
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MASW-010646 MASW-010646 | |
3g signal Booster
Abstract: HMC439QS16G HMC245QS16 W. Howard Associates gsm Booster GSM/ 3G booster HMC444LP4 Lambda Sensor hmc439 HMC311LP3
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36dBm OC-48 OC-192 3g signal Booster HMC439QS16G HMC245QS16 W. Howard Associates gsm Booster GSM/ 3G booster HMC444LP4 Lambda Sensor hmc439 HMC311LP3 |