PIN SWITCH MMIC KA Search Results

Contextual Info: SONY CXG1039TN High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic Description 10 pin TSSOP Plastic The CXG 1039TN is a high isolation absorptive SPDT (Single Pole Dual Throw) switch MMIC used in PCS handsets. This IC is designed using the Sony’s GaAs J-FET

Contextual Info: 26-40 GHz GaAs MMIC SPDT PIN Switch EBAlpha AP640R2-00 Features Chip Outline • Broad Bandwidth, 26-40 GHz ■ Low Loss, <1.1 dB ■ High Isolation, >28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, <2 ns ■ High Power Handling Capability, 37 dBm Peak, 33 dBm CW

AP640R2-00

Contextual Info: GaAs MMIC SPDT PIN Switch 26-40 GHz Reflective AP640R2-00 Features • Broad Bandwidth, 26 - 40 GHz ■ Low Loss, < 1.1 dB ■ High Isolation, > 28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, < 2 ns ■ Low Power Consumption, < 25 mA Total at -5V ■ High Power Handling Capability, 37 dBm Peak,

GaAs MESFET

Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
Contextual Info: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. 3-3 GaAs FET MMIC SPST Switch Reflective DC-18 G H z .

MMIC SWITCH

Abstract: RTPA5250-130
Contextual Info: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information

IC 994

Abstract: TGS4304
Contextual Info: Advance Product Information September 26, 2005 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw

S3330

Abstract: TGS4304
Contextual Info: Advance Product Information February 14, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw

AP640R2-00

Abstract: Ka-band TGS4302 DSA00265953
Contextual Info: Advance Product Information February 6, 2006 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss

Contextual Info: Advance Product Information February 15, 2008 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss

philips rf manual

Abstract: jedec JESD625-a Philips varicap tef6860 TEF6860HL philips catv 860 amplifier ic small signal transistor philips manual rf push pull mosfet power amplifier TEA5767 TEF6901H
Contextual Info: RF 매뉴얼 6차 개정 RF 제품에 대한 애플리케이션 및 디자인 매뉴얼 2005년 5월 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 본 RF 매뉴얼은 RF 시스템에 대한 광범위한 각종 자료와 다양한 측면을 망라하였습니다. 본 문서에서는 RF 소 小 신호 개별 부품 (Small signal

Contextual Info: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features •      Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads

Contextual Info: MASW-011036 Ka-Band High Power Terminated SPDT PIN Switch, 26-40 GHz Features •       Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss <1 dB High Isolation >38 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads

Contextual Info: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features •      Rev. V2 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 13 W CW Power, +85°C Die with G-S-G RF Pads and DC Bias Pads

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

2SK163 spice model

Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
Contextual Info: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed

Contextual Info: Design & Manufacturing Excellence Military & Space Solutions Custom Integrated Circuits • Semiconductor device to system level knowledge • Validated device models • Extensive library of proven Analog, Digital & Mixed-Signal ICs and MMICs • Specialty products include: Synthesizers,

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Contextual Info: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

CXG1235XR

Contextual Info: SP5T Antenna Switch CXG1235XR Description The CXG1235XR is an SP5T antenna switch. On chip logic reduces component count and simplifies PCB layout by allowing direct connection of the switch to digital baseband control lines with the CMOS logic levels. It requires 3 CMOS control lines.

SW-279

Contextual Info: High Power GaAs SPDT Switch DC-2.5 GHz SW-279 SO-8 Features • +36 dBm Typ. 1 dB Compression Point, -8V Supply • +65 dBm Typ. 3rd Order Intercept Point, -8V Supply • Low Insertion Loss: 0.4 dB Typical • Low Power Consumption: 100 |jW • Fast Switching Speed