PIN PHOTODIODE CHIP 850NM Search Results

VFIR

Abstract: PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm SD150-14-006 VCSEL die bonding PIN photodiode chip 850nm
Contextual Info: SD150-14-006 16/32Mbps Si PIN Photodiode Chip The SD150-14-006 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at

SI 13003

Abstract: X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm SD150-13-003 VCSEL die bonding 850nm photodiode
Contextual Info: SD150-13-003 4 Mbps Si PIN Photodiode Chip The SD150-13-003 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at

FID08T13TX

Abstract: 08T13TX photodiode 850nm PIN photodiode 10 nm
Contextual Info: FID 08T13TX SILICON UN PHOTOnOK DESCRIPTION The FID08T13TX is a Si-PIN photodiode designed for use in optical local area network LAN system and optical data link system at 0.8jum wavelength region. A photodiode chip having 1000/xm 1mm diameter of photosensitive

Contextual Info: TPD-1C12-000 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1

pin InGaAs chip

Abstract: pin 1300nm
Contextual Info: TPD-1C12-002 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1

1E13

Abstract: TPD-1C12-011
Contextual Info: TPD-1C12-011 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1

PIN 1300nm

Abstract: TPD-1C12-001 1E13 InGaas PIN photodiode chip
Contextual Info: TPD-1C12-001 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1

Contextual Info: TPD-1C12-013 InGaAs PIN photodiode chip FEATURES: • Optimized for monitor application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Fig. 1 R ID VBD C

InGaas PIN photodiode chip

Abstract: PIN photodiode chip 850nm PIN photodiode chip
Contextual Info: TPD-1C12-006 InGaAs PIN photodiode chip FEATURES: • Monitor optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Breakdown Voltage Capacitance Fig. 1 R VBD C MIN TYP MAX UNIT TEST CONDITIONS

GaAs-PIN-Photodiode

Abstract: PIN photodiode chip 850nm
Contextual Info: TPD-8D12-002 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 0.2 Responsivity Dark Current Breakdown Voltage

InGaas PIN photodiode chip

Abstract: TPD-1C12-007 InGaas PIN photodiode, 3mm
Contextual Info: TPD-1C12-007 InGaAs PIN photodiode chip FEATURES: • Monitor optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Breakdown Voltage Capacitance Fig. 1 MIN R VBD C Typical Dark Current and Forward Current

TPD-8D12-001

Contextual Info: TPD-8D12-001 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 1.0 9.0 0.6 0.8 Responsivity 1 Dark Current

PIN photodiode 850nm

Abstract: PIN photodiode chip 850nm
Contextual Info: TPD-8D12 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS R IF ID VBD C 0.55 100 0.6 0.63 0.2 85 0.7

TPA-8D12-001

Contextual Info: TPA-8D12-001 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 1.0 9.0 0.6 0.8 Responsivity 1 Dark Current

TPA photodiode

Abstract: PIN photodiode chip 850nm PIN photodiode 850nm
Contextual Info: TPA-8D04-002 GaAs PIN photodiode chip FEATURES: •1xN array bar with 250 um pitch N≥2 • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R RS ∆R ID VBD C TR/TF

siemens 30 090

Contextual Info: SIEMENS Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 7771— Ip ] Approx. BPW 34 BPW 34 S Photosensitive area 2.65 mm x 2.65 mm weight 0.1 g geoo6643 1 .1 i Chip posit O i r i .9 Ò .0 .1 CO I r f ’ «Ni-'-: i t n hf 6.7 R O

Contextual Info: SFH216 Silicon PIN Photodiode Dimensions in inches mm .291 (7.4) .259 (6.6) .571 ( 14.51 . 492 ( 12.5) 0.100 2.54) ,208 (S.3\ .197 (5.0) rs ' _L ( Cathode A .018 (0.45) .106 T 0.189(4.8) e n 81 (4.6) Glass Lens (2.7) Chip Location .220 ( 5.6), .208 (5.3)

0829

Contextual Info: Si PIN Photodiode S623Ô PRELIMINARY DATA Sep.1995 High reliability temperature , Surface mountable package FEATURES •S to ra g e temperature : -40 to +125°C Operating temperature : -40 to +100°C • H ig h sensitivity (0.72A / W at 960nm) •S u rfa c e mountable chip carrier package

InGaas PIN photodiode, 1550 NEP

Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
Contextual Info: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High

AX65-R2F

Abstract: PIN photodiode sensitivity 850nm photodiode chip silicon
Contextual Info: CENTRONIC LTD 45E J> m s ia ? □□□□□at, Ultra High Speed Photodiodes 3 metui AX65-R2F The AX65-R2F is a high quality low cost silicon photodiode specially designed for fiber optic applications operating in the 850nm range. Frequency response of 100 MHz can be attained

Contextual Info: CENTRONIC LTD 45E D m sia? 3 Ultra High Speed Photodiodes mczm t^ H S " AX65-R2F The AX65-R2F is a high quality low cost silicon photodiode specially designed for fiber optic applications operating in the 850nm range. Frequency response of 100 MHz can be attained

Contextual Info: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 850nm Single Mode VCSEL TO-46 Package HFE4093-332 Key Features: • • • • • • Designed for drive currents between 1 and 5 mA Optimized for low dependence of electrical properties over temperature

MAX3266

Abstract: MAX3266CSA MAX3267 MAX3267CSA TO56 package TO-56 header
Contextual Info: 19-4796; Rev 1; 6/00 KIT ATION EVALU E L B AVAILA 1.25Gbps/2.5Gbps, +3V to +5.5V, Low-Noise Transimpedance Preamplifiers for LANs The 1.25Gbps MAX3266 has a typical optical dynamic range of -24dBm to 0dBm in a shortwave 850nm configuration or -27dBm to -3dBm in a longwave

Contextual Info: 19-4796; Rev 1; 6/00 KIT ATION EVALU E L B AVAILA 1.25Gbps/2.5Gbps, +3V to +5.5V, Low-Noise Transimpedance Preamplifiers for LANs The 1.25Gbps MAX3266 has a typical optical dynamic range of -24dBm to 0dBm in a shortwave 850nm configuration or -27dBm to -3dBm in a longwave