PIN DIODES 10 GHZ Search Results

TEKELEC* diode

Abstract: Tekelec diode
Contextual Info: 2SE££>-< M 'M SS': ¿Si HIGH-VOLTAGE PIN AND NIP DIODES Silicon PIN Switching and Phase Shifting Multithrow Switch M odules. 10

MF-1134

Abstract: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL gas detector NDL5405 NDL5405C NDL5430C NDL5430CR NDL5471RC NDL5490 NDL5490L
Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE NDL5430C Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS for 10 Gb/s f30 mm InGaAs PIN PHOTO DIODE DESCRIPTION NDL5430C Series are InGaAs PIN photo diodes for 10 Gb/s long wavelength transmission systems. It covers

diode smd marking SOD323 5-6

Abstract: 20 GHz SMD PIN diode 20 GHz PIN diode smd marking blue 6 GHz SMD PIN diode BAR50-03W
Contextual Info: Diodes SMD Type Silicon PIN Diodes BAR50-03W SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz +0.1 2.6-0.1

43B diode

Abstract: DIODE S 43a marking code 43b marking 43b diode 43b marking 43C marking JC diode 43B MARKING marking 43a marking code 43a
Contextual Info: Silicon PIN Diodes ● High-speed switching ● Phase shifting up to 10 GHz ● Power splitter BXY 43 Type Marking Ordering Code Pin Configuration Package1 BXY 43A – Q62702-X116 Cathode: black dot, T1 BXY 43B Q62702-X104 BXY 43C Q62702-X105 Maximum Ratings

Contextual Info: vtSHAY _ BA679.BA679S ▼ Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 25°C Parameter

5965-8882E

Abstract: POWER12 diode ph-150
Contextual Info: That müHÆHEWLETT PACKARD Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data Features • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz

Contextual Info: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz

equivalent 3140

Abstract: a 3140 HP 5082-3140 AN929 hp 3140
Contextual Info: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 5082-3141 Features Outline 60 • Broadband Operation HF through X-Band • Low Insertion Loss Less than 0.5 dB to 10 GHz 5082-3140 • High Isolation Greater than 20 dB to 10 GHz

DC2118A

Abstract: DC2110A Marconi Applied Technologies modulators DC2110B DC2110C DC2110G DC2118B DC2118C DC2118G
Contextual Info: Waveguide PIN Diodes Suitable for use as switches, modulators, attenuators and limiters. * Low resistance * Frequency range 10 MHz to 18 GHz * Low capacitance * Mesa and planar versions available * High breakdown voltage Minimum Maximum Maximum reverse forward

BA479G

Abstract: BA479S
Contextual Info: BA479G.BA479S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

BA479G

Abstract: BA479S
Contextual Info: BA479G.BA479S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

BA479G

Abstract: BA479S
Contextual Info: BA479G.BA479S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

MA4P7455-1225

Abstract: PIN diode SPICE model - free
Contextual Info: MA4P7455-1225 Quad PIN Diode π Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)

ma4p7455

Abstract: PIN diode MACOM SPICE model MA4P274-1225 M513 MA4P274-1225T MA4P7455-1225T
Contextual Info: MA4P274-1225 Quad PIN Diode π Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)

Contextual Info: MA4P7455-1225 Quad PIN Diode Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)

PIN diode SPICE model - free

Contextual Info: MA4P7455-1225 Quad PIN Diode π Attenuator 10 - 4000 MHz Features • 4 PIN diodes in a SOT-25 Plastic Package • Externally Selectable Bias and RF Matching Network • 10 – 4,000 MHz Useable Frequency Band • + 43 dBm IP3 @ 1000 MHz 50 Ω • 1.0 dB Loss @ 1000 MHz (50 Ω)

BA979

Abstract: BA979S
Contextual Info: BA979.BA979S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications 96 12009 Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

BA679

Abstract: BA679S
Contextual Info: BA679.BA679S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

9734

Abstract: BA679 BA679S
Contextual Info: BA679.BA679S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

BA979

Abstract: BA979S
Contextual Info: BA979.BA979S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

BA779

Contextual Info: BA779–2 TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol

8550 sot-23

Abstract: BA779 BA779S
Contextual Info: BA779.BA779S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

Contextual Info: BA779.BA779S_ v is h a y Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter