PI150 Search Results

UIS5005-223MF

Abstract: UIS5005 UIS5005-103MF UIS5005-123MF UIS5005-153MF UIS5005-183MF UIS5005-282MF UIS5005-333MF UIS5005-392MF UIS5005-473MF
Contextual Info: SMT POWER INDUCTORS E & E Magnetic Products Limited Unshielded Drum Type UIS5005 Series SCHEMATICS Suitable for DC/DC converters, industrial products and handheld devices. Unshielded and small footprint with high energy storage and low resistance Superior performance and self-leaded design for surface

BYW 200

Abstract: byw 150 diodes byw DO-220 BYW 70 80PI-200 BYW98-150 220-I R1550 81P-150
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL MO @lllLi gï[Ei©[iiilO(gS RECTIFIER DIODES TO 220 DOP 31 U ¿/ ISOTOP ISOTOP V TOP 31 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VRRM = 50» 10° - 150>200 v Type •o VRRM <FSM 10 ms vF / If T i 100°C max

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: OPTEK Product Bulletin OPUSO May 1993 Optically Coupled Isolators Types OPUSO, OPI153 Features Absolute Maximum Ratings • 5 0 k V electrical isolation • Phototransistor output OP1150 or photodarlington output (OPI153) • Hermetically sealed L E D and

Contextual Info: SMT POWER INDUCTORS E & E Magnetic Products Limited Unshielded Drum Type UIS5005 Series SCHEMATICS Suitable for DC/DC converters, industrial products and handheld devices. Unshielded and small footprint with high energy storage and low resistance Superior performance and self-leaded design for surface

OS-3502

Abstract: OS-3602 OS3502 lm117 3.3V PM47 TLP1024 TLP1025 TLP1029 TLP1034 MARK UU1
Contextual Info: -331 &ÍJ % ffy TLP1023 £ í± m 'T & £ TLP1024 * ;l •/ híS X U •/ ' 3 >v Y / FLU I FHL max ;.mA: max mA: mm! (mm 5 0.5 - 3 0.5 4 ft is (V ) - WÌlir-ìmft H íFí fit *¡ T„„, cc im A ) V cc (V ) m in <V) m ax (V ) t.mA) ro 14 280 5 4.5 17 50

8609 series Receptacle

Abstract: PI-48 burndy 96 pin PI96B30R PI150B DIN 41612 Connectors 64 Pin TYPE b burndy 000E3 DIN 41612 Connectors 48 Pin TYPE f burndy 96position burndy pi48
Contextual Info: DIN Connectors Basic Mating Dimensions And General Specifications R P L - B 2 0 R 1 G 0 2 _ PI_B20P00_0G_ PI B2 0R A 0 _ 0 0 _ PI B 3 0 R A 0 _ 0 0 _ R P L . B 2 0 P 2 C 0 2 _ TYPE B TYPE C, M TYPE Q CATALOG PAGE 20,22 8,10, 28, 30 24,26 NUMBER OF POSITIONS Max

BYV 200

Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Contextual Info: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns

BYV 200

Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Contextual Info: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220

RTL8111CL

Abstract: OZ128TN first bios notebook pro c2 IT8510 Fujitsu SIEMENS Amilo phoenix bios Phoenix BIOS specification PI1505 fujitsu siemens amilo pro ddr2 ram slot pin detail
Contextual Info: Chapter 1 Page 1 of 19 General System Description Chapter 1 General System Description 1 Hardware Specifications……………………………………………… 5 2 Software Specifications……….……………………………….……… 19 Page 2 of 19

TOP210PFI equivalent

Abstract: TOP210 TOP210PFI irf840 mosfet drive circuit diagram IRFP460 full bridge int100s motor controller IRF830 IRFP450 bridge PI-1505-050195 INT100
Contextual Info: Function and Application of the INT100 and INT200-202 APPLICATION NOTE AN-10 The INT100 and INT200/201/202 comprise a family of devices designed to drive N-channel MOSFET transistors in a half bridge configuration. High-voltage integrated technology is

VG95324

Abstract: PI48B30P00F00Z1 PI96B30P PI96B32P00F00N9 pi48b30 PI96B30P00F00Z1 PI150B30P PI96B32P00 pi96b32p00f00 burndy connectors din
Contextual Info: DIN Connectors Basic Mating Dimensions And General Specifications R P L - B 2 0 R 1 G 0 2 _ PI_B20P00_0G_ PI B20RA0_00_ PI B 3 0 R A 0 _ 0 0 _ R P L . B 2 0 P 2 C 0 2 _ TYPE B TYPE C, M TYPE Q CATALOG PAGE 20,22 8,10, 28, 30 24,26 NUMBER OF POSITIONS Max

Contextual Info: DIN Connectors Standard Vertical Receptacle Type C, 1 /2 C, Expanded M a ' Eria . A nd P lating • Hi JSiKi • C c n i A' A • P . ating I iqt I C•ray The:n o.ilastic UL94 V-0 Coppe> alloy N9 .000030 0(i076 gold in contact area, tin lead on tails with .000050 (.00127)