PHOTOTRANSISTOR WITH BASE EMITTER Search Results
PHOTOTRANSISTOR WITH BASE EMITTER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 11C90DM |
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11C90 - Prescaler, ECL Series |
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| 100324/VYA |
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100324 - TTL to ECL Translator, 6 Func, Complementary Output, ECL - Dual marked (5962-9153001VYA) |
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| DS1631J-8/B |
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DS1631 - Buffer/Inverter Based Peripheral Driver |
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| DS1632J-8/883 |
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DS1632 - Buffer/Inverter Based Peripheral Driver - Dual marked (5962-9052201PA) |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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PHOTOTRANSISTOR WITH BASE EMITTER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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JISC0301
Abstract: Phototransistor with base emitter
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QEE213
Abstract: QSE243
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QSE243 QEE213 QSE243 QEE213 | |
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Contextual Info: O ptoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T he H U G series consists o f a gallium arsenide, infrared emitting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to |
OCR Scan |
H11G3 300jusec, | |
pin diagram of IC 7402
Abstract: TCLT11 TCLT1100 TCLT1101 TCLT1102 TCLT1103 TCLT1105 TCLT1106 TCLT1107 TCLT1108
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TCLT11. D-74025 pin diagram of IC 7402 TCLT11 TCLT1100 TCLT1101 TCLT1102 TCLT1103 TCLT1105 TCLT1106 TCLT1107 TCLT1108 | |
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Contextual Info: Optoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to |
OCR Scan |
H11G3 | |
pin diagram of IC 7402
Abstract: IC 7402 pin diagram TCLT1102 TCLT1105 IC 7402 TCLT11 TCLT1100 TCLT1101 TCLT1103 TCLT1106
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TCLT11. D-74025 pin diagram of IC 7402 IC 7402 pin diagram TCLT1102 TCLT1105 IC 7402 TCLT11 TCLT1100 TCLT1101 TCLT1103 TCLT1106 | |
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Contextual Info: TCLT11. Series Vishay Telefunken Optocoupler with Phototransistor Output, Base connected Description The TCLT11. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 5-lead SO6L package. The elements are mounted on one leadframe using a |
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TCLT11. D-74025 | |
CNW11AV-1
Abstract: CNW11AV-2 SICK DME 5000 CNW11AV-3
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CNW11AV-1 CNW11AV-2 CNW11AV-3 CNW11AV DS300398 CNW11AV-1 CNW11AV-2 SICK DME 5000 CNW11AV-3 | |
4n25 application note
Abstract: 4N26-X007 4N27 application note 4N25 applications 4n25 optocoupler Control 4N25 4N25 4N25-X006 4N26 4N27
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4N25/4N26/4N27/4N28 i179004 4N25/4N26/4N27/4N28. VDE0884 08-Apr-05 4n25 application note 4N26-X007 4N27 application note 4N25 applications 4n25 optocoupler Control 4N25 4N25 4N25-X006 4N26 4N27 | |
SL5500 SL5501 SL5511
Abstract: sl5500 SL5511 SL5501
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SL5500 SL5501 SL5511 SL5500, SL5501 SL5511 E90700) SL5500 DS300403 SL5500 SL5501 SL5511 | |
BPW13A
Abstract: BPW13B BPW13C BPW13 950NM
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BPW13 D-74025 BPW13A BPW13B BPW13C 950NM | |
KPT811
Abstract: KPT811H TF 5367
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2002/95/EC) KPT811H 0905/KPT811H) KPT811 KPT811H TF 5367 | |
IL256AT
Abstract: RS481A
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IL256AT i179025 IL256AT 11-Mar-11 RS481A | |
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Contextual Info: IL256AT Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 8 NC C/A 2 7 B NC 3 6 C NC 4 5 E i179025 DESCRIPTION The IL256AT is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in reverse |
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IL256AT RS481A) 2002/95/EC 2002/96/EC i179025 IL256AT 2011/65/EU 2002/95/EC. 2011/65/EU. | |
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IL256AT
Abstract: RS481A
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IL256AT i179025 IL256AT 18-Jul-08 RS481A | |
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Contextual Info: IL256AT Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 8 NC C/A 2 7 B NC 3 6 C NC 4 5 E i179025 DESCRIPTION The IL256AT is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in reverse |
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IL256AT RS481A) 2002/95/EC 2002/96/EC i179025 IL256AT 08-Apr-05 | |
CNX36U
Abstract: 3 pin phototransistor CNX39U CNX35U CNX38U
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CNX35U CNX36U CNX38U CNX39U CNX35U, CNX38U CNX39U E90700) 3 pin phototransistor | |
phototransistor 3 pin
Abstract: t-1 ir phototransistor CNX36U all ic datasheet in one pdf file dual Phototransistor CNX35U CNX38U CNX39U
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CNX35U CNX36U CNX38U CNX39U CNX35U, CNX38U CNX39U E90700) phototransistor 3 pin t-1 ir phototransistor all ic datasheet in one pdf file dual Phototransistor | |
CNX36U
Abstract: CNX35U CNX38U CNX39U
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CNX35U CNX36U CNX38U CNX39U CNX35U, CNX38U CNX39U E90700) | |
pc353
Abstract: D2006 E195 E64380 PC353TJ0000F sharp rohs marking
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PC353TJ0000F PC353TJ0000F UL1577 E64380 PC353) D2-A00402EN pc353 D2006 E195 E64380 sharp rohs marking | |
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Contextual Info: BP103 Silicon NPN Phototransistor Characteristics TA=25°C FEATU R ES • Especially suitable for applications from 420nm to1130nm • High linearity • TO-18, base plate, transparent epoxy resin Ians, with base connection • Spectral sensitivity selections |
OCR Scan |
BP103 420nm to1130nm BP103 EM0t59a PCE250= | |
BPW13A
Abstract: BPW13B K950 BPW13C BPW13 Telefunken Phototransistor npn phototransistor bpw 104 lm 1510
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OCR Scan |
BPW13 950nm fiT20CHb GG11S11 BPW13A BPW13B K950 BPW13C Telefunken Phototransistor npn phototransistor bpw 104 lm 1510 | |
BPW76A
Abstract: BPW76 BPW76B
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BPW76 BPW76 D-74025 15-Jul-96 BPW76A BPW76B | |
IEC60747-5-2
Abstract: IL256A IL256AT RS481A VDE0884
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IL256AT i179025 IL256A 08-Apr-05 IEC60747-5-2 IL256AT RS481A VDE0884 | |