PHOTOTRANSISTOR 3 LEGS Search Results

Contextual Info: 3875081 G E SOLID STATE 01E 19732 D Optoelectronic S pecifications_ HA RR IS S E M I C O N D S E C T O R 37E D • LiBDSSTl 0 0 2 7 1 ^ 4 3 ■ HAS Photon Coupled Isolator H 1 1 G 1- H 1 1 G2 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected Phototransistor

PHOTOTRANSISTOR 3 LEGS

Abstract: EE-SX1235-P2 IR sensor and photo diode pair Electric Welding Machine diagram EE-SA401-P welding machine diagram
Contextual Info: omRon Technical Information Technical Information Non-amplified Output Sensing Methods Features Operating principle Sensing method Transmissive A pair of light source element LED and detector element (phototransistor) opposing each other on the same optical axis is housed in a case to

Contextual Info: 01E 3875081 G E SOLID STATE uptoeiectronic specifications _ HARRI S SEMI COND 3 7E SECTOR 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor

PHOTOTRANSISTOR 3 LEGS

Abstract: military resistors catalog photoconductive cell cdse schematic retro reflective sensor "x-ray detector" VTR17D1 opamps catalog common cathode photodiode diodes catalog design opto interrupter
Contextual Info: Optoelectronics Lighting Imaging Telecom Sensors Detectors and Sensors Optoswitches, Optical Hybrids, and Custom Optical Assemblies Specialty Lighting Digital Imaging Telecom Sensors . . Optoswitches, optical hybrids, custom assemblies, photodiodes, phototransistors, IR

Contextual Info: 3875081 G E SOLID STATE 0 1E 19858 D Optoelectronic Specifications_ T - Í //- S 3 HARRIS SEMICOND SECTOR 37E D I M305571 Photon Coupled Isolator GEPS2001 0057350 ! M IL L IM E T E R S J O T M B Jkr M IN . ; M A X . Ga As Infrared Em itting Diode & NPN Silicon Photo-Transistor

TRANSISTOR CD 2897

Abstract: GFH601 k 2897 transistor 340 opto isolator 100J1
Contextual Info: HARRIS SEMICOND MÊimmmmtiÈÊmâiiim SECTOR 37E D B 430SS71 DG2732b S E l HAS Optoelectronic Speciticatio n s. Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The G E Solid State GFH601 consists of a gallium arsenide infrared

Contextual Info: HARRIS SEMICOND 3 7E SECTOR D 4305271 □0273G0 I HAS =1 Optoelectronic Specifications _ Photon Coupled Isolator CNY33 Ga A s Infrared Em itting D iode & N PN S ilicon High V o ltage Photo-Transistor The G E Solid State CNY33 is a gallium arsenide, infrared emitting

cq 838

Contextual Info: 3875081 G E SOLID STATE 01E 19818 D Optoelectronic Specifications_ HARRI S SEMICOND 3 7E SECTOR D 430E271 GG27SÔD 7 • T ^ y /- S 3 Photon Coupled Isolator CQY80 r. G a A s In fr a r e d E m ittin g D io d e & N P N S ilic o n P h o to -T r a n s is to r

Contextual Info: HARRIS SEMICOND SECTOR 37E 4302271 D 0027142 L> I HAS Optoelectronic Specifications_ T -V /-S 3 Photon Coupled Isolator4N38,4N38A MIN. 3 1« tTOPVIEWI 4 FEATURES: 2 6 ! s 1 - s y y u • Fast switching speeds , • High DC current transfer ratio • High isolation resistance

PHOTOTRANSISTOR 3 LEGS

Contextual Info: 3875 08 1 0 1 E 19776 G E SOLID STATE Optoelectronic Specifications - HARRIS SEMICOND SECTOR 37E D S 4302271 0G2723Ô fl • HAS Photon Coupled Isolator SL5511 The GE Solid State SL551I consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. The GE

Contextual Info: 387 5 0 8 1 0 1E 19736 STATE G E SOLID Optoelectronic Specifications HARRIS SEMICOND SECTOR 37E D T'W-ZS B 4302271 0 D 2 ? n a 0 • HAS Photon Coupled Isolator H11G45-H11G46 Ga As Infrared E m itting D iode & N P N Silicon Darlington Connected Phototransistor

robot circuit diagram free download

Contextual Info: Robotics with the Boe-Bot Student Guide VERSION 3.0 WARRANTY Parallax warrants its products against defects in materials and workmanship for a period of 90 days from receipt of product. If you discover a defect, Parallax will, at its option, repair or replace the merchandise, or refund the

Contextual Info: HA RR IS S E M I C O N D S E CT OR 4 3 D 2 2 7 1 D 0 S 7 3 Q S 2 • HAS 37E D Optoelectronic S p e c ific a tio n s _ T-4I-S3 AC Input Photon Coupled Isolator CNY35 — i.— -1 -j_ ■rtAA 3 1» 1 c ITOPV1EWI S 4 S \ G a A s Infared Em itting D iode s & N P N Silicon Photo-Transistor

Contextual Info: 3875081 G E SOLID STATE 01E 19826 D Optoelectronic Specifications. T-m-13 HARRIS SEMI COND SECTOR 37E D H 4302271 0027200 1 MHAS Photon Coupled Interrupter Module C N Y 28 T he G E Solid S tate CNY28 is a gallium arsenide infrared em itting diode coupled w ith a silicon p h o to tran sisto r in a plastic housing. T he

Contextual Info: 3875081 G E S O L ID STATE 01E 19782 Optoelectronic Specifications_ HARRIS SE MI COND SECTOR 37E T> -r-M 1-7 3 I 4302271 0027244 3 HHAS 1m m Aperture Photon Coupled Interrupter Module H 21A 4,H 21A 5,H 21A 6 The GE Solid State H21A Interrupter Module is agallium arsenide

Contextual Info: -»wMtflggfcaA.«» sE r^ Y p tfn f.-^ a iir-r,- HARRIS SEMICOND SECTOR 37E D rr "irrriirT iaj-if! t , M302271 DGE7330 7 • HAS Optoelectronic Specifications_ T-m-ZS Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & N’PN Silicon Darlington Connected Phototransistor

Contextual Info: H A R R IS SEM IC O ND SECTOR 37E ]> 4302271 D02733Ö 1 B IH A S Optoelectronic Specifications. T -Hi-53 Photon Coupled Isolator MCT210 G aA s In fra re d E m ittin g Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting

Contextual Info: 3875081 G E SO LID 01E STATE 1 9 8 10 D Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D H 4302271 0G27272 A E l HAS Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Em itting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H24B series consists of a gallium arsenide

Contextual Info: 3875081 G E SOLID STATE 0 1E 19772 Optoelectronic Specifications -T - W J - Î 3 HARRI S SEMI COND SECTOR 3 7E D • 4305571 0057534 0 ■ Photon Coupled Isolator SL5504 The GE Solid State SL5504 consists of a gallium arsenide infrared emitting

Omron H3BA

Abstract: smd transistor A6t omron relay 12VDC, IEC255 omron h3ba timer smd a6t double diode smd transistor A6a h3ba 5 pin relay 12vdc 4088 cross reference capillary rotary compressor RELAY OMRON LZN 203
Contextual Info: 2005 Components Catalogue Text 2005 Catalogue 1 Contents Welcome to the 2005 Omron Catalogue Section 1 – POWER RELAYS 8-9 10 - 168 Technical Information – Power & Signal Relays 10 - 31 Selection Guide 32 - 43 G5B 44 - 47 G5NB-E 48 - 51 G5SB 52 - 55 G6M

Contextual Info: 3875081 G E SOLID STATE 01E 19802 Optoelectronic Sp e c ific atio n s_ H A R R IS SEMICOND S EC T O R 37E D 43G2271 Matched Emitter-Detector Pair H23B1 SYM T he G E Solid State H 23B 1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a silicon,

Contextual Info: 3875081 G E SOLID STATE 01E Optoelectronic Specifications- 19768 r-v/-& 3 HARRIS SEMICOND SECTOR 37E » • 4302271 QD2723Q 3 « H A S Photon Coupled Isolator SL5500 - SL5501 The GE Solid State SL5500 - SL5501 consists of a gallium arsenide infrared

Contextual Info: HARRIS SENICOND SECTOR 37E » 4305E71 005715b b • HAS O p to ele c tro n ic S p e c ific a tio n s -T ‘- V / 'Í 3 Photon Coupled Isolator H11A520-H11A550 -H11A5100. Ga As Infrared E m itting D iode & NPN Silicon Photo-T ransistor The G E Solid State H 11A520, H 11A550 and H 11A 5100 consist of a

Contextual Info: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide