PHOTODIODE SUBMOUNT Search Results

G8941

Abstract: G8941-01 G8941-02 G8941-03
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm

G8941

Abstract: G8941-01 G8941-02 G8941-03
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8941 series Sub-mount type photodiode for LD monitor Features Applications l Active area l LD monitor G8941-01: φ1 mm G8941-02: φ0.5 mm G8941-03: φ0.3 mm l Miniature package: 2 x 2 × 1 mm l Precise chip position tolerance: ±0.075 mm

Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]

Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] .060 [1.52] PD CL .030 [0.76] I METALIZATION THIS SIDE C L .040 [1.02] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]

Photodiode cost sheet

Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
Contextual Info: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC

photodiode demodulation

Abstract: gold metal detectors gold detectors circuit bond wire gold fiber optic detector fibre optic laser ceramic package PDB-C122
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA CL .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION

Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA C L .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION

SAE230VX

Abstract: SAE500VX SAE500VS SAE500 avalanche photodiode
Contextual Info: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity

inGaAs photodiode 1550

Contextual Info: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE 200 avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at

Contextual Info: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at

InGaas PIN photodiode, 1550 NEP

Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at

InGaas PIN photodiode chip

Contextual Info: Pin Photodiode KeyFeatures InGaAs Material Planar Zn Diffused Structure 70 Micron in Diameter Active Area Front-illuminated Photodiode High Responsivity 0.85 A/W on a Wide Range (1300nm to 1600nm Low Dark Current Applications 2.5 Gb/s Receiver Modules Telecom

Contextual Info: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at

IAG 080

Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at

InGaas PIN photodiode chip

Abstract: datasheets for photodiode chips
Contextual Info: Optical Monitoring Photodiode Chip KIP-M25-1 Description KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current

1500-nm

Contextual Info: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD500-S The 35PD500-S, an InGaAs photodiode with a 500µm-diameter photosensitive region mounted on a metallized ceramic substrate, is a versatile device with applications in high sensitivity instrumentation, laser

InGaas PIN photodiode chip

Abstract: for photodiode chips KIP-107-1 pin InGaAs chip 1071 cp
Contextual Info: 1.25G InGaAs PIN Photodiode Chip KIP-107-1 Description KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current

InGaAs pin photodiode 1Ghz

Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is the largest standard device enabling a 1GHz frequency cutoff. Planar

Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD55-C The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very

KIP-M1M

Abstract: InGaas PIN photodiode chip
Contextual Info: Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM Description KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter Ø1.0mm,Ø2.0mm,Ø3.0mm . It is recommended for Laser diode life test and optical power monitoring. Features Front illuminated planar PIN-PD

Contextual Info: High Performance InGaAs p-i-n Photodiode Sheet 1 of 3 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for moderate-to-high speed applications. Efficiency coupling to

InGaas PIN photodiode chip

Abstract: for photodiode chips KIP-205-1
Contextual Info: 2.5 Gbps InGaAs PIN Photodiode Chip KIP-205-1 Description KIP-205-1 is InGaAs PIN Photodiode chip with Ø50 um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current