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    PHOTODIODE PD Search Results

    PHOTODIODE PD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPT301M
    Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-J
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P-JG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy
    OPT101PG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy

    PHOTODIODE PD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PHOTODIODE Si photodiode with preamp S8745, S8746 Photodiode and preamp integrated with feedback resistance and capacitance S8745, S8746 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all


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    S8745, S8746 S8746 S8745 S8745: S8746: SE-171 KSPD1054E02 PDF

    S8745

    Abstract: S8746
    Contextual Info: PHOTODIODE Si photodiode with preamp S8745, S8746 Photodiode and preamp integrated with feedback resistance and capacitance S8745, S8746 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all


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    S8745, S8746 S8746 S8745 S8745: S8746: SE-171 KSPD1054E03 PDF

    dual photodiode

    Abstract: S8302 psd photodiode
    Contextual Info: PHOTODIODE/PSD Photodiode/PSD sensor S8302 Dual photodiode or PSD switchable sensor S8302 is a unique light sensor whose active area can be switched to dual-photodiode or PSD by an external signal. Features Applications l One-dimensional sensor with active area switchable


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    S8302 S8302 SE-171 KPSD1018E02 dual photodiode psd photodiode PDF

    IR photodiode

    Abstract: ir preamplifier SE-171 S7998 IR photodiode 880 nm photometry
    Contextual Info: PHOTODIODE Si photodiode with preamp S7998 Photodiode 3 x 3 mm /preamplifier assembly in compact package S7998 is a UV to near IR detector using a 3 × 3 mm photodiode integrated with preamplifier. The photodiode chip and the preamplifier are assembled at high density by direct bump connections. The preamplifier bias current is so small that a high feedback resistance of 1 GΩ can be


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    S7998 S7998 SE-171 KSPD1053E02 IR photodiode ir preamplifier IR photodiode 880 nm photometry PDF

    650NM photodiode

    Abstract: LOG100 photodiode 650nm nep photodiode amplifier REF200
    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 OPT301 650nm) 20dB/decade REF200 REF200 2N2222 4-20mA 650NM photodiode LOG100 photodiode 650nm nep photodiode amplifier PDF

    VR-10V

    Contextual Info: PIN Photodiode KODENSHI HPI-6FH DIMENSIONS Unit : mm The HPI-6FH is a high-output, high-speed silicon photodiode mounted in a side-viewing plastic package . This photodiode isboth compact and easy to mount. FEATURES •Plastic mold package •High speed response


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    1000lx 780nm 780800nm 2856K VR-10V PDF

    photodiode 650nm nep

    Abstract: LOG100 OPT301 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve
    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 OPT301 650nm) photodiode 650nm nep LOG100 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve PDF

    high speed photodiode detector circuit

    Abstract: KDP6004A PIN Photodiode Si pin photodiode module Photodiode pin sensitivity silicon pin photodiode rise time of silicon photodiode 700NM IR photodiode ir photodiode wavelength
    Contextual Info: Silicon PIN Photodiode KDP6004A Dimensions The KDP6004A is high-speed silicon pin photodiode [Unit : mm] in COB package and responds to wavelengths from 700nm to 1050nm. Features Higly sensitive Si PIN photodiode. Chip On Board package. High speed response.


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    KDP6004A KDP6004A 700nm 1050nm. 2856K high speed photodiode detector circuit PIN Photodiode Si pin photodiode module Photodiode pin sensitivity silicon pin photodiode rise time of silicon photodiode IR photodiode ir photodiode wavelength PDF

    LOG100

    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 650nm) OPT301 LOG100 PDF

    Photodiode

    Abstract: KHP2032 auto light sensor P900
    Contextual Info: PIN Photodiode KHP2032 The KHP2032 is a high-output,high-speed silicon [Unit : mm] Dimensions Pin photodiode mounted in a side -viewing plastic package. This photodiode is both compact and easy to mount. Features ① ② Anode Cathode Sidelooking Plastic package


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    KHP2032 KHP2032 2850K Photodiode auto light sensor P900 PDF

    LOG100

    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 650nm) OPT301 LOG100 PDF

    LOG100

    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 OPT301 650nm) LOG100 PDF

    LOG100

    Abstract: 2N2222 curve
    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 650nm) OPT301 LOG100 2N2222 curve PDF

    S7516

    Abstract: S7516-01
    Contextual Info: PHOTODIODE Si PIN photodiode with preamp S7516 series Wide band detector for spatial light transmission S7516 series is a Si PIN photodiode incorporating a wide band preamplifier chip, hermetically sealed in a TO-8 package. The photodiode has a large active area B3 mm yet offers a wide bandwidth, making S7516 series suitable for spatial light transmission. A lens (B9 mm) window type


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    S7516 S7516-01) S7516 S7516-01: SE-171 KPIN1037E05 S7516-01 PDF

    HPI-304R4L

    Contextual Info: PIN Photodiode KODENSHI HPI-304R4L DIMENSIONS Unit : mm The HPI-304R4L is a high-output, high-speed silicon photodiode mounted in a side-viewing plastic package with visible light cut-off filter. This photodiode is both compact and easy to mount. FEATURES


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    HPI-304R4L HPI-304R4L 1000lx 2856K PDF

    650NM photodiode

    Abstract: photodiode 650nm nep LOG100 650NM photodetector INA106 equivalent LARGE SURFACE AREA PHOTODIODE photodiode amplifier REF200 transistor 2n2222 TO-90 OPT209P-J
    Contextual Info: OPT209 FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT209 OPT209 650nm) 16kHz IN4148 REF200 REF200 2N2222 650NM photodiode photodiode 650nm nep LOG100 650NM photodetector INA106 equivalent LARGE SURFACE AREA PHOTODIODE photodiode amplifier transistor 2n2222 TO-90 OPT209P-J PDF

    LOG100

    Abstract: OPT209 OPT209P REF200 650NM photodiode 1232B INA106 equivalent
    Contextual Info: OPT209 FPO FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT209 OPT209 650nm) 16kHz IN4148 REF200 REF200 2N2222 LOG100 OPT209P 650NM photodiode 1232B INA106 equivalent PDF

    330KO

    Abstract: S1232
    Contextual Info: BU R R - BROW N OPT209 PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transim pedance amplifier on a single dielectrically isolated chip. The


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    OPT209 650nm) 16kHz OPT209 17313L 330KO S1232 PDF

    Contextual Info: OID3 TO 18 Photodiode _ General Description OID3 is a single photodiode in standard TO18 metal package. The active area of the silicon die is 0.71 x 0.71 mm2. The high optical responsitivity is due to the antireflective coating deposited on the photodiode active area.


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    050mm. PDF

    Contextual Info: B U R R - BRO W N 0PT2Q1 INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 X 0.090 inch 2.29 x 2.29mm The OPT201 is an opto-electronic integrated circuit containing a photodiode and transim pedance amplifier on a single dielectrically isolated chip. The


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    OPT201 650nm) PDF

    PDB-C112

    Abstract: AMP CONNECTOR blue photodiode wavelength BNC/CONNECTOR BNC
    Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Type PDB-C112 DETECTORS INC. PACKAGE DIMENSIONS inch mm 0.175 [4.45] 0.073 [1.85] PHOTODIODE ACTIVE SURFACE TO TOP OF WINDOW PWB WINDOW Ø0.975 [Ø24.77] Ø0.4447 [Ø11.295] ACTIVE AREA (100 mm )


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    PDB-C112 3x10-13 100-PDB-C112 PDB-C112 AMP CONNECTOR blue photodiode wavelength BNC/CONNECTOR BNC PDF

    PDB-V101-I

    Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photovoltaic Isolated Type PDB-V101-I DETECTORS INC. PACKAGE DIMENSIONS inch [mm] Ø0.184 [4.67] WINDOW CAP WELDED Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP


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    PDB-V101-I PDB-V101-I PDF

    transistor c102

    Abstract: C102 M C102 transistor c102 PDB-C102-I
    Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Type PDB-C102-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] WINDOW CAP WELDED Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP


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    PDB-C102-I PDB-C102-I transistor c102 C102 M C102 transistor c102 PDF

    PDB-C104-I

    Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Type PDB-C104-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] Ø0.155 [3.94] WINDOW CAP WELDED 0.198 [5.03] WIRE BONDS 0.500 [12.70] MIN 0.125 [3.18] Ø0.100 B.C. PHOTODIODE


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    PDB-C104-I PDB-C104-I PDF