PHOTODIODE LINEAR ARRAY 256 Search Results
PHOTODIODE LINEAR ARRAY 256 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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1SS307E |
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Switching Diode, 80 V, 0.1 A, ESC, AEC-Q101 | Datasheet | ||
BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet | ||
1SS361FV |
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Switching Diode, 80 V, 0.1 A, VESM, AEC-Q101 | Datasheet | ||
TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
1SS352 |
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Switching Diode, 80 V, 0.1 A, USC, AEC-Q101 | Datasheet |
PHOTODIODE LINEAR ARRAY 256 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RL1205LGQ-711Contextual Info: HIGH SENSITIVITY Modules and optical Receivers Large L-Series CMOS Linear Photodiode Array FORMAT PIXELS For SPECTRosCOPY CMOS Linear Photodiode Arrays – L-Series Applications • Spectroscopy • Colorimetry Features and Benefits • 2.5 mm photodiode aperture |
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RL1201LGQ-711 RL1501LFQ-711 RL1202LGQ-711 RL1502LFQ-711 RL1205LGQ-711 RL1505LFQ-711 RL1210LGQ-711 RL1205LGQ-711 | |
IR photodiode sensor
Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
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16-ELEMENT S5668 175mm 575mm 46-ELEMENT C4351 IR photodiode sensor Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 silicon photodiode array Photodiode Array 2d Linear Image sensor IC | |
transistor C4159Contextual Info: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a |
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G6891, G6893 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, transistor C4159 | |
RETICON 128 application notesContextual Info: K Series JLeGsB RET1CON Wide Aperture Linear Photodiode Array W Introduction The EG&G Reticon K Series linear photodiode arrays are designed for applications that require higher sensitivity and wider dynamic range than is available with square element geometries. Devices in this series contain 128, 256, 512 or |
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RL0128K RL0256K RC0100LNB-011/RC0104LNN-011 RC0100LNB-011/RC0105LNN-011 RC0100LNB-011/RC0106LNN-011 3D3D73Ã RETICON 128 application notes | |
RL1024KAQ011
Abstract: RL0256
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RL0128K RL0256K RC0100LNB-011/RC0104LNN-011 RC0100LNB-011/RC0105LNN-011 RC0100LNB-011/RC0106LNN-011 RL1024KAQ011 RL0256 | |
InGaAs photodiode array chip
Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
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G11135 SE-171 KMIR1018E06 InGaAs photodiode array chip charge amplifier array Image Sensors G11135-512DE | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E04 | |
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08 | |
CDS light sensor
Abstract: G8050 G8051 G8052 G8052-256D G8053 G8053-512D infrared cmos digital image
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G8050 G8053 SE-171 KMIR1009E04 CDS light sensor G8051 G8052 G8052-256D G8053-512D infrared cmos digital image | |
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08 | |
G8053
Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
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G8050 G8053 SE-171 KMIR1009E03 G8053-512R G8053-512S G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S | |
C7557
Abstract: C8061-01 C8062-01 G9201 G9202 G9203 G9203-256D G9204 G9204-512D
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G9201 G9204 SE-171 KMIR1012E02 C7557 C8061-01 C8062-01 G9202 G9203 G9203-256D G9204-512D | |
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 B1201, KMIR1011E11 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E01 | |
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Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E03 | |
detector ingaasContextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E09 detector ingaas | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E02 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E01 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E05 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E02 | |
14 pin ic 7404
Abstract: sn 7404 n ic diagram pin DIAGRAM OF IC 7474 7474 ic pin configuration pin configuration of ic 7404 7404 ic diagram ic 7474 pin diagram ic 7474 with timing diagram LZ2019 7404 ic pin configuration
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LZ2019 2048-bit LZ2019 2048-element 1024element 256mm 14 pin ic 7404 sn 7404 n ic diagram pin DIAGRAM OF IC 7474 7474 ic pin configuration pin configuration of ic 7404 7404 ic diagram ic 7474 pin diagram ic 7474 with timing diagram 7404 ic pin configuration | |
Photodiode Array 32 elementContextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low |
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G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E02 Photodiode Array 32 element | |
G9204
Abstract: G9203-256D G9204-512D
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G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: SE-171 KMIR1013E02 G9204 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low |
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G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E02 |