PHOTODIODE GERMANIUM Search Results

c1837

Abstract: ir photodiode amplifier near IR photodiodes low noise ir photodiode amplifier photodiode 1024 elements silicon S-2318 s2301 S23011 photodiode 256 elements silicon photodiode 512 elements
Contextual Info: HAMAMATSU CORP 11E D • 422^01 35,38 and 46 ELEMENT PHOTODIODE ARRAYS Hamamatsu offers new series of linear photodiode arrays designed for multichannel spectrophotometers. These photodiode arrays feature wide spectral response from ultraviolet to near infrared and low cross-talk between

low dark current APD

Abstract: photodiode germanium photodiode 011 APD 10ghz
Contextual Info: GERMANIUM AVALANCHE PHOTODIODE FPD13P12JX DESCRIPTION The FPD13P12JX is a germanium avalanche photodiode APD w ith a m ultim ode fiber pigtail designed fo r use in a local area network and sub­ scriber loop applications. The APD chip has a photosensitive area diameter

FPD13R12JY

Contextual Info: GERMANIUM AVALANCHE PHOTODIODE FPD13R12JY DESCRIPTION The FPD13R12JY is a germanium avalanche photodiode APD w ith a m ultim ode fiber pigrail designed fo r use in a local area network and sub­ scriber loop applications. It is also applicable in a high-bit-rate optical

germanium photodiode

Abstract: photodiode germanium Ford Aerospace a 6151 germanium diode L4521 Germanium mesa
Contextual Info: 3667320 FORD FORD AEROSP- , AEROSP. 97D AERONUTRONIC AERONUTRONIC T? 00452 DE J 3 t b 7 3 2 0 00DG452 1 GERMANIUM PHOTODIODE ^ ^ ^ ^ | F o r d Aerospace & ^^vt^pCom m unicationsGorporation L iË C T R O -O P T IC A L$DEVJC E S L4S21 DESCRIPTION The L4521 germanium photodiode is designed for use as a laser detecting device

Thermistor 15k

Abstract: G-020/TE2
Contextual Info: Detector Components PIN OUT .550 .06 1 2 3 4 5 6 7 8 .375 .5 .225 .075 Dimensions in Inches The TE cooled photodiode series consists of a high performance photodiode mounted on a thermoelectric cooler, all housed in a TO-8 package. A thermistor is mounted to the TEC’s cold plate to

germanium photodiode PIN

Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Contextual Info: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V

Contextual Info: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V

APY12

Abstract: APY 12 Siemens photodiode visible light Germanium power K/HOP-1045
Contextual Info: SFH 231 SIEMENS GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom • Usage: Visible Light and Near Infrared Range * High Spectral Sensitivity ■ High Reliability * Very Short Switching Time

FPD13R51KS

Contextual Info: DESCRIPTION The FPD13R51KS is a Germanium Avalanche Photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at high-bit-rates and over long distances. The 50Mm photosensitive diameter is optimized to achieve both higher

Ultrafast Photodiode InGaAs

Abstract: Ultrafast Photodetectors GMbh UPD-300 vogt UPD-200 ALPHALAS Photodiodes 190-1100 nM silicon PIN ultrafast photodiode UPD-200-SD UPD-70 IR2
Contextual Info: ALPHALAS GmbH ULTRAFAST PHOTODETECTORS UPD FEATURES: - ultra high-speed operation - risetime below 40 picoseconds - wide spectral ranges - built-in biasing - long-life battery - coaxial photodiode coupling - compact design - high sensitivity APPLICATIONS:

photodiode array 1550 nm

Abstract: Photodiode Array 32 element
Contextual Info: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear

laser range finder schematics

Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Contextual Info: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series

Contextual Info: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )

quadrant detector

Abstract: detector active area size nep J16QUAD-8D6-R05M-HS
Contextual Info: J16PS Room Temperature Germanium Position Sensors j udson Figure 35-2 Example of Position Linearity • J16PS P osition S ensors A Ge position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y beam position

Contextual Info: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Anode .570(14.5) .492(12.5) 149(3.8) .138(3.5) -X - •J57(4.0j .149 (3.8) *006 (.15) Max. ~ T 0.189(4.80) 0.179(4.55) 0.100 (2.54), _L .018 (0.45) .220(5.6) .208 (5.3) .086 (2.2) ~079 (2.0) /

FPD3R2

Abstract: photodiode germanium Fujitsu avalanche photodiode avalanche photodiode noise factor
Contextual Info: FPD3R2KX/LX Germanium Avalanche Photodiode FEATURES • • • • Low dark current: 0.15|j A High quantum efficiency: 75% at 1,3 jm Low Multiplied dark current: 10pA Storage & operating temperature: -40 to +85°c APPLICATIONS • High bit rate optical transmission system up to 1.0 Gbit.

FPD13R12JT

Abstract: GL-50
Contextual Info: DESCRIPTION The FPD13R12JT is a germanium avalanche photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at a high-bit-rate and a long distance. It is also applicable in local area net­ work and subscriber loop systems. The APD chip has a photosensitive area

Contextual Info: 6.144 Gbps Transimpedance Amplifier with Integrated Photodiode ADN3000-06 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC VCC ADN3000-06 50Ω OUT+ OUT– POWER MONITOR APPLICATIONS Optical receivers up to 6.5 Gbps 6G CPRI, OBSAI, and 8G short range and LTE receivers

FPD13R51JY

Abstract: low dark current APD
Contextual Info: DESCRIPTION The FPD13R51JY is a germanium avalanche photodiode APD with a multimode fiber pigtail designed for use in a local area network and a subscriber loop application. It is also applicable in a high-bit-rate optical transmission system. The APD chip has a photosensitive area diameter of 50jum and has a

Contextual Info: 6.144 Gbps Transimpedance Amplifier with Integrated Photodiode ADN3000-06 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC VCC ADN3000-06 50Ω OUT+ OUT– POWER MONITOR APPLICATIONS Optical receivers up to 6.5 Gbps 6G CPRI, OBSAI, and 8G short range and LTE receivers

smd 6PIN "vhz"

Abstract: SIEMENS Germanium
Contextual Info: SFH 231 SIEMENS Germanium PIN Photodiode D im ensions in in ch e s mm .291 (7.4) .259 (6.6) .571 (14.51 .492(12.5) ,208 (5.3), 197 (5.0) 0.100 Cathode 0.189(4.8) 0.181 (4.6) (2.54) J A .018(0.45) l .106 (2.7) • ' Glass Lens Chip Location FEATURES • Especially suitable for applications from 600

lidar apd model

Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
Contextual Info: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.

Contextual Info: bGE D • ÛEBStiGS DD4h725 24b « S I E G 7 SIEMENS AKTIENGESELLSCHAF SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Cathode 570(14 5) 492(12 5) 149 (3 8} 138 (3 5) _ u N»_ 0 100 (2541 1 157 (4 0j .149 (3 8) Max /¡fisi I 0 189(4

G030

Abstract: IGA-003/TE2 S-010 S-025 S-050 S-050UV M2510 K243
Contextual Info: VIS-NIR PHOTODIODE COMPONENTS EOS offers a line of Silicon, Germanium, Indium Gallium Arsenide, and Indium Gallium Arsenide Antimonide photodiodes for use in the 0.3 µm to 2.4 µm spectrum. Diodes operating at room temperature or TE cooled are offered in a variety of standard TO packages. Dewar packages for use with liquid nitrogen are also available.