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    PHOTODIODE 67 Search Results

    PHOTODIODE 67 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPT301M
    Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-J
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P-JG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101PG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy
    OPT101P
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy

    PHOTODIODE 67 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Photodiode Arrays for x-ray Security Scanning Left: 16 Element, 1.6 mm Pitch Photodiode Array With Segmented Csi Scintillator. Right: 16 Element, 2.5 mm Pitch Photodiode Array With GOS Low Energy Screen Scintillator. Photodiode Arrays – VTA Series Applications


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    VTA2164H-D PDF

    650NM photodiode

    Abstract: LOG100 photodiode 650nm nep photodiode amplifier REF200
    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 OPT301 650nm) 20dB/decade REF200 REF200 2N2222 4-20mA 650NM photodiode LOG100 photodiode 650nm nep photodiode amplifier PDF

    photodiode 650nm nep

    Abstract: LOG100 OPT301 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve
    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 OPT301 650nm) photodiode 650nm nep LOG100 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve PDF

    650NM photodiode

    Abstract: photodiode amplifier 650NM photodetector Isolated 4-20ma photodiode 650nm nep LOG100 2n2222 transistor datasheet 650NM photodiode 40 kilohertz metal proximity detector sensor op amp
    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 OPT301 650nm) 650NM photodiode photodiode amplifier 650NM photodetector Isolated 4-20ma photodiode 650nm nep LOG100 2n2222 transistor datasheet 650NM photodiode 40 kilohertz metal proximity detector sensor op amp PDF

    LOG100

    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 650nm) OPT301 LOG100 PDF

    LOG100

    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 650nm) OPT301 LOG100 PDF

    LOG100

    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 OPT301 650nm) LOG100 PDF

    LOG100

    Abstract: 2N2222 curve
    Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT301 650nm) OPT301 LOG100 2N2222 curve PDF

    650NM photodiode

    Abstract: photodiode 650nm nep LOG100 650NM photodetector INA106 equivalent LARGE SURFACE AREA PHOTODIODE photodiode amplifier REF200 transistor 2n2222 TO-90 OPT209P-J
    Contextual Info: OPT209 FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT209 OPT209 650nm) 16kHz IN4148 REF200 REF200 2N2222 650NM photodiode photodiode 650nm nep LOG100 650NM photodetector INA106 equivalent LARGE SURFACE AREA PHOTODIODE photodiode amplifier transistor 2n2222 TO-90 OPT209P-J PDF

    LOG100

    Abstract: OPT209 OPT209P REF200 650NM photodiode 1232B INA106 equivalent
    Contextual Info: OPT209 FPO FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The


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    OPT209 OPT209 650nm) 16kHz IN4148 REF200 REF200 2N2222 LOG100 OPT209P 650NM photodiode 1232B INA106 equivalent PDF

    Contextual Info: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray


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    16-element S11212-421 S11212 S11212-321 S11212-121 S11212-021 S5668 PDF

    330KO

    Abstract: S1232
    Contextual Info: BU R R - BROW N OPT209 PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transim pedance amplifier on a single dielectrically isolated chip. The


    OCR Scan
    OPT209 650nm) 16kHz OPT209 17313L 330KO S1232 PDF

    Contextual Info: 16-element Si photodiode arrays S11212-421 S11212-321 S11212 series S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray


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    16-element S11212-421 S11212-321 S11212 S11212-121 S11212-021 S5668 PDF

    S268P

    Contextual Info: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant


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    S268P S268P D-74025 15-Jul-96 PDF

    Contextual Info: PHOTODIODE 76-element Si photodiode array S3954 High UV sensitivity photodiode array mounted in DIP Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Half pitch 78-lead DIP l Element size: 3.175 x 0.3175 mm l Entire active area: 3.175 × 25.6875 mm


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    76-element S3954 78-lead SE-171 KMPD1041E02 PDF

    Photodiode Array 32 element

    Contextual Info: PHOTODIODE 76-element Si photodiode array S3954 High UV sensitivity photodiode array mounted in DIP Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Half pitch 78-lead DIP l Element size: 3.175 x 0.3175 mm l Entire active area: 3.175 × 25.6875 mm


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    76-element S3954 78-lead SE-171 KMPD1041E02 Photodiode Array 32 element PDF

    Contextual Info: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray


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    16-element S11299-421 S11299 S11299-321 S11299-121 S11299-021 S5668 PDF

    Contextual Info: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type S11299-021 The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray


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    16-element S11299-421 S11299 S11299-321 S11299-121 S11299-021 S5668 PDF

    CD 8403

    Abstract: S268P
    Contextual Info: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides


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    S268P D-74025 CD 8403 PDF

    S268P

    Abstract: silicon photodiode array
    Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    S268P S268P D-74025 20-May-99 silicon photodiode array PDF

    S268P

    Contextual Info: S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    S268P S268P D-74025 20-May-99 PDF

    Contextual Info: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    S268P S268P 08-Apr-05 PDF

    S268P

    Abstract: silicon photodiode array
    Contextual Info: S268P Vishay Semiconductors Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2.


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    S268P S268P 18-Jul-08 silicon photodiode array PDF

    Fabry-Perot-Laser-Diode

    Abstract: PIN Photodiode 1310nm bookham receiver laser 1310nm photodiode BKM-2123-A-11-FP BKM-2123-A-11-SP BKM-2123-A-21-FP BKM-2123-A-21-SP GR-468-CORE Laser Diode 14 pin DIL
    Contextual Info: Fabry-Perot laser diode receiver photodiode ASOC Single-wavelength Single-fibre Bi-directional Optical Transceivers transimpedance amplifier silicon waveguide silicon-oninsulator substrate monitor photodiode pig-tailed fibre optical transmit/receive BKM-2120 Family


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    BKM-2120 1310nm -40oC 14-pin GR-468-CORE W300C, Fabry-Perot-Laser-Diode PIN Photodiode 1310nm bookham receiver laser 1310nm photodiode BKM-2123-A-11-FP BKM-2123-A-11-SP BKM-2123-A-21-FP BKM-2123-A-21-SP GR-468-CORE Laser Diode 14 pin DIL PDF