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    S11212 Search Results

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    Davies Molding LLC S1-12.120.01

    ROHDE~WHT~PROFILEALUMNATMATTEF
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    Onlinecomponents.com S1-12.120.01
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    TE Connectivity TAKS1-12-12-2-Z-SB

    TAKS1-12-12-2-Z-SB - Bulk (Alt: TAKS1-12-12-2-Z-SB)
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    Avnet Americas TAKS1-12-12-2-Z-SB Bulk 19 Weeks, 5 Days 50
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    Mouser Electronics TAKS1-12-12-2-Z-SB
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    Sager TAKS1-12-12-2-Z-SB 1
    • 1 $294.43
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    Interstate Connecting Components TAKS1-12-12-2-Z-SB
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    Master Electronics TAKS1-12-12-2-Z-SB
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    Amphenol Corporation SJS112121P

    SJS INLINE RECP, MTL, - Bulk (Alt: SJS112121P)
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    Avnet Americas SJS112121P Bulk 19 Weeks 25
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    Mouser Electronics SJS112121P
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    Amphenol Corporation SJS112120

    Conn Circular Housing 12 Position Receptacle Straight Cable Mount Polyamide 6.6 - Bulk (Alt: SJS112120)
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    Avnet Americas SJS112120 Bulk 18 Weeks 25
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    Mouser Electronics SJS112120
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    TTI SJS112120 Each 25
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    Amphenol Corporation SJS112121

    SJS112121 - Bulk (Alt: SJS112121)
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    Avnet Americas SJS112121 Bulk 18 Weeks 25
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    Mouser Electronics SJS112121
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    S11212 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product S5668


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    16-element S11212-421 S11212 S11212-321 S11212-121 S11212-021 S5668 PDF

    Contextual Info: 16素子Siフォトダイオードアレイ S11212-421 S11212シリーズ S11212-321 S11212-121 S11212-021 X線非破壊検査用の裏面入射型 フォトダイオードアレイ 裏面入射型構造を採用したX線非破壊検査用の16素子Siフォトダイオードアレイです。当社従来品 S5668シリーズ に比


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    S11212-421 S11212ã S11212-321 S11212-121 S11212-021 S5668ã PDF

    Contextual Info: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray


    Original
    16-element S11212-421 S11212 S11212-321 S11212-121 S11212-021 S5668 PDF

    Contextual Info: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray


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    16-element S11212-421 S11212 S11212-321 S11212-121 S11212-021 S5668 PDF

    Contextual Info: 16-element Si photodiode arrays S11212-421 S11212-321 S11212 series S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray


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    16-element S11212-421 S11212-321 S11212 S11212-121 S11212-021 S5668 PDF

    Contextual Info: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd


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    SQS464EEN AEC-Q101 2002/95/EC SQS464EEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SQS404EN-T1-GE3

    Abstract: marking D3 TSOP-6 PPAK1212
    Contextual Info: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    SQS404EN AEC-Q101 2002/95/EC SQS404EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQS404EN-T1-GE3 marking D3 TSOP-6 PPAK1212 PDF

    MAR 826

    Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


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    SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC SQ7415AEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MAR 826 PDF

    Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified


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    SQ7415EN AEC-Q101 2002/95/EC SQ7415EN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SQS466EEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 Vg • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd


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    SQS466EEN AEC-Q101 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray


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    16-element S11299-421 S11299 S11299-321 S11299-121 S11299-021 S5668 PDF

    near IR photodiodes

    Abstract: S8745-01 S8558
    Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


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    KSPD0001E09 near IR photodiodes S8745-01 S8558 PDF

    Contextual Info: SQ3418EEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualifiedd


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    SQ3418EEV AEC-Q101 2002/95/EC SQ3418EEV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SQS462EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    SQS462EN AEC-Q101 2002/95/EC SQS462EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SQ1420EEH www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested • Typical ESD Protection: 800 V


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    SQ1420EEH AEC-Q101 2002/95/EC OT-363 SC-70 SC-70 SQ1420EEH-T1-GE3 11-Mar-11 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    Contextual Info: SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    SQS420EN AEC-Q101 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original
    SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SQ1470EH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original
    SQ1470EH AEC-Q101 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: SQ3418EEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualifiedd


    Original
    SQ3418EEV AEC-Q101 2002/95/EC SQ3418EEV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SQ1470EH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    SQ1470EH AEC-Q101 2002/95/EC OT-363 SC-70 SC-70 SQ1470EH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: SQS401EN www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    SQS401EN AEC-Q101 2002/95/EC SQS401EN-T1-GE3 11-Mar-11 PDF

    Contextual Info: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    SQ1421EEH AEC-Q101 2002/95/EC OT-363 SC-70 SC-70 SQ1421EEH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC PDF

    SQ3427

    Abstract: SQ3427EEV-T1-GE3
    Contextual Info: SQ3427EEV www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


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    SQ3427EEV AEC-Q101 2002/95/EC SQ3427EEV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQ3427 SQ3427EEV-T1-GE3 PDF