PHOTODIODE 34B Search Results

Contextual Info: SIEMENS BPW 34B SILICON PIN PHOTODIODE ENHANCED BLUE SENSITIVITY FEATURES * Large Active Area Photodiode * Silicon Planar PIN Photodiode * N-Si Material: Anode=Front Contact, Cathode=Back Contact Maximum Ratings * High Reliability O perating and Storage T em perature R ange TOP, T= tq .- 4 0 " to +80"C

BPW34B

Contextual Info: SIEMENS BPW 34B Silicon PIN Photodiode Enhanced Blue Sensitivity FEATURES • Especially »unable for applications from 350 nm to 1100 nm • Short switching time typ. 25 ns • DIL plastic package with high packing density • SMT version on request APPLICATIONS

I-455

Contextual Info: HFD3002-002/XXX Silicon PIN Photodiode FEATURES • Low capacitance • High speed: tr = 30 ns max. at Vr = 5 V; 10 ns max. at V r = 15 V • High responsivity • Housing electrically isolated • Wave solderable • Mounting options SMA single hole ST single hole

Contextual Info: . OPTEK P roduct B ulletin O PF482 Au gu st 1996 Fiber Optic High Speed PIN Photodiode in ST* Receptacle Type OPF482 Features A bsolute M axim um Ratings T a = 2 5 ° C unless otherw ise noted • Component pre-mounted and ready to use • High speed, low capacitance

photodiode 34b

Abstract: OPF482 240C2
Contextual Info: @ O P IE K Product Bulletin OPF482 August 1996 Fiber Optic High Speed PIN Photodiode in ST* Receptacle Type OPF482 Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e n o te d • Reverse V olta g e . 1 oo VDC

floppy disk drive 3.5 diskette diagram

Abstract: 8084 microprocessor Microprocessor 8048 floppy disk motor head driver 8048 microprocessor P2211
Contextual Info: SSI 34B580 mcmsuàm' Port Expander Floppy Disk Drive July, 1990 DESCRIPTION FEATURES The SSI 34B580 device is a bipolar integrated circuit that serves as an input/output port expander for an 8084 type microprocessor based floppy disk drive system. The device consolidates functions normally

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

SFH100

Abstract: germanium photodiode PIN fotodioden BPY12 SFH231 fotodiode Q62702-P1052 400nm photodiode germanium BPW 61
Contextual Info: Si-Fotodetektoren Silicon Photodetectors 7. Fotodioden für spezielle Wellenlängen Package Type <6 Radiant sensitive 7. Photodiodes for Special Wavelengths s, ^•Smax W e10V 7.1 mm2 A/W nA UV-empfindliche Fotodiode SFH291 7.2 ±55 2.73x2.73 0.3 (£ 1 )/5 V

SDL2361H1

Abstract: SDL-2300 SDL-2352-H1 SDL-2382-P1 SDL-2360 SDL-23-10-P1 6NA8 sdl-2380 SDL-2371-H SDL laser diode manual
Contextual Info: • UP TO 4.0 WATT CW HIGH BRIGHTNESS GaAIAs LASER DIODES Key Features 4, 3, 2, 1.2, 0.5 W cw Power 500, 370, 200, 100 and 50 pm Apertures High Efficiency MOCVD Quantum Well Design Internal TEC Option For Wavelength Control High Reliability Open Heat Sink, Window, and Fiber Packages

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

Current to voltage Converter 4-20mA using LM324

Abstract: Voltage to Current Converter 4-20mA using LM324 jfet cascode XTR101 Voltage to Current Converter 4-20mA LM324 XTR110 comparator 7445 PDS-555 REF200 INA117
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

Voltage to Current Converter 4-20mA using LM324

Abstract: Current to voltage Converter 4-20mA using LM324 Voltage to Current Converter 4-20mA LM324 bridge transducer 4-20ma using instrumentation amplifier LM324 current source inverter 4-20ma current source precision 4-20ma current source constant current source rtd circuits NPN transistor 2n2222 beta value lm324 triangle
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

Contextual Info: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High

MIL-STD-883 method 2019

Abstract: ESCC ndr 550 APS2-FVD-06-003 radiation ionizing dose TID detector
Contextual Info: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High

bond pull test

Abstract: STAR250 star tracker image sensor star tracker
Contextual Info: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High

CJ 4148 ZENER

Abstract: etri converter S837 XTR110 transistor PNP A105
Contextual Info: B U R R -B R O W N Ml A P P L I C A T I O N B U L L E T IN M a ilin g A d d r e s s : PO B o x 1 1 4 0 0 • T u c s o n , A Z 8 5 7 3 4 • S tr e e t A d d r e s s : 6 7 3 0 S. T u c s o n B lv d . • T u c s o n , A Z 8 5 7 0 6 Tel: 602 746-1111 • Tw x: 910 -95 2-11 1 • Telex: 066-6491 • FAX (602) 8 89 -15 10 • Im m e d ia te P ro d u ct Info: (800) 5 48 -61 32

Contextual Info: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High

BK7G18 glass

Abstract: NOIH2SM1000A
Contextual Info: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High

transistor 56B marking

Abstract: NOIH2SM1000A
Contextual Info: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High

optO i

Abstract: Gate level simulation just phd soldering process radiation ionizing dose TID detector Reflective Optical Sensor with Transistor Output euv photodiode
Contextual Info: NOIH2SM1000A HAS2 Image Sensor Introduction • 0.1 Scope The HAS2 is classified as class 1A JEDEC classification [AD03] device for ESD sensitivity. For proper handling and storage conditions, refer to the ON Semiconductor application note AN52561. This ICD version is generated after qualification campaign

APS2-FVD-06-003

Abstract: PIN photodiode 10 nm
Contextual Info: NOIH2SM1000A HAS2 Image Sensor 1. Introduction • 1.1 Scope The HAS2 is classified as class 1A JEDEC classification [AD03] device for ESD sensitivity. For proper handling and storage conditions, refer to the ON Semiconductor application note AN52561. This ICD version is generated after qualification campaign

00149

Contextual Info: NOIH2SM1000A HAS2 Image Sensor 1. Introduction • 1.1 Scope The HAS2 is classified as class 1A JEDEC classification [AD03] device for ESD sensitivity. For proper handling and storage conditions, refer to the ON Semiconductor application note AN52561. This ICD version is generated after qualification campaign

HAS2 cypress

Abstract: STAR250 long range gold detector circuit diagram digital SUN SENSOR cmos detector space radiation BK7G18 psoc new projects 2011 RAD-HARD distance sensor STAR-1000 STAR250 star tracker AD03
Contextual Info: CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, test- and

HAS2 cypress

Abstract: APS2-FVD-06-003 SUN SPOT 300KR
Contextual Info: Image Sensor CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical,