PHOTODIODE 1100 NM Search Results
PHOTODIODE 1100 NM Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH1100CQ5 |
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N-ch MOSFET, 150 V, 49 A, 0.0111 Ω@10 V, High-speed diode, SOP Advance(N) | Datasheet | ||
OPT301M |
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Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 |
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OPT101P-J |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT101P-JG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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PHOTODIODE 1100 NM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Optoway APD-1100 * InGaAs Avalanche PHOTODIODE APD-1100 SERIES * |
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APD-1100 APD-1100 | |
apd photodiode responsivity 1550nm
Abstract: InGaAs apd photodiode APD 1550nm InGaAs Photodiode 1550nm APD "PhotoDiode" 1550nm APD-1100 avalanche photodiode 1550nm sensitivity apd photodiode responsivity
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APD-1100 APD-1100 apd photodiode responsivity 1550nm InGaAs apd photodiode APD 1550nm InGaAs Photodiode 1550nm APD "PhotoDiode" 1550nm avalanche photodiode 1550nm sensitivity apd photodiode responsivity | |
InGaAs apd photodiode
Abstract: APD Ghz avalanche 1550nm photodiode 5 Ghz photodiode Avalanche photodiode APD-1100 avalanche photodiode 1550nm sensitivity
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APD-1100 APD-1100 InGaAs apd photodiode APD Ghz avalanche 1550nm photodiode 5 Ghz photodiode Avalanche photodiode avalanche photodiode 1550nm sensitivity | |
BPW32
Abstract: Siemens photodiode visible light bpw 32 3cj6 bpw photodiode S1027
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OCR Scan |
as3b32b BPW32 Siemens photodiode visible light bpw 32 3cj6 bpw photodiode S1027 | |
PDC4310Contextual Info: H InGaAs/InP FC-Connectorized High Speed Photodiode with Fiber Optic Pigtail Assembly Technical Data PDC4310 Features Description • 20 GHz Bandwidth • 1100-1650 nm Optical Sensitivity The PDC4310 high speed connectorized PIN photodiode is a state of the art optical detector |
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PDC4310 PDC4310 10in-lbs. 5963-1126E | |
S2858
Abstract: S2858-01 PIN photodiode 300 nm photodiode 1100 nm S2856 S3887 photodiode 1000 nm G1957 24x24
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OCR Scan |
S1406-03 S1406-04 S1406-05 S1406-06 S5590 S5591 S3887 G1957 S2856, S2802 S2858 S2858-01 PIN photodiode 300 nm photodiode 1100 nm S2856 photodiode 1000 nm 24x24 | |
XY 801Contextual Info: Quadrant - Photodiode JQ 20P characteristics : ♦ ♦ ♦ ♦ Si-PIN-photodiode spectral range 400 - 1100 nm active area 4 x 5 mm2 hermetic sealed TO-8 package application : ♦ ♦ ♦ ♦ position sensing of laser beams autokollimators xy - coordinate measurement |
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XY 801
Abstract: XY 801 4 pin
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XY 801
Abstract: JQ50P
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JQ50P XY 801 JQ50P | |
SFH203
Abstract: SFH 203
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203FA) SFH203) SFH203FA) D-93055 SFH203 SFH 203 | |
Contextual Info: 2014-01-13 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 213, SFH 213 FA SFH 213 SFH 213 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 213) and 750 nm to 1100 nm (SFH 213 FA) • Short switching time (typ. 5 ns) |
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400nm 1100nm D-93055 | |
Contextual Info: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 203, SFH 203 FA SFH 203 SFH 203 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203) and 750 nm to 1100 nm (SFH 203FA) • Short switching time (typ. 5 ns) |
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203FA) SFH203) SFH203FA) D-93055 | |
SFH213Contextual Info: 2011-10-20 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 SFH 213, SFH 213 FA SFH 213 SFH 213 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 213) and 750 nm to 1100 nm (SFH 213 FA) • Short switching time (typ. 5 ns) |
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400nm 1100nm D-93055 SFH213 | |
Contextual Info: Photodiode Side Look Chip Part Nu mber Materi al BPD-RQ0AIV1* Electrical & Optical Characteristics Wave length p nm Si-Photodiode 940(820-1100) (PIN) Lens Colo r Black Light Current I L (u A) @V R =5V Ee=5 mW /cm 2 Reverse Open Circui t Breakdown Vo ltag e |
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IR-17 | |
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Contextual Info: Photodiode Side Look Chip Part Nu mber Materi al BPD-RQ0AIV1* Electrical & Optical Characteristics Wave length p nm Si-Photodiode 940(820-1100) (PIN) Lens Colo r Black Light Current I L (u A) @V R =5V Ee=5 mW /cm 2 Reverse Open Circui t Breakdown Vo ltag e |
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IR-17 | |
UDT Sensors PSD
Abstract: fast photodiode amplifier UDT photodiode -5 silicon UDT 500 UDT-555D UDT Sensors 555D UDT PIN UDT-020UV Photodiode amplifier ceramic case
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1100nm. UDT Sensors PSD fast photodiode amplifier UDT photodiode -5 silicon UDT 500 UDT-555D UDT Sensors 555D UDT PIN UDT-020UV Photodiode amplifier ceramic case | |
Contextual Info: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 203 P, SFH 203 PFA SFH 203 P Features: SFH 203 PFA Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203 P) and 750 nm to 1100 nm (SFH 203 PFA) • Short switching time (typ. 5 ns) |
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D-93055 | |
SFH203
Abstract: SFH203P
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D-93055 SFH203 SFH203P | |
UDT-455
Abstract: UDT photodiode -5 silicon photodiode high responsivity high shunt resistance silicon pin photodiode laser detection UDT Sensors PSD model UDT-455 UDT Sensors
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1100nm. UDT-455 UDT photodiode -5 silicon photodiode high responsivity high shunt resistance silicon pin photodiode laser detection UDT Sensors PSD model UDT-455 UDT Sensors | |
IF-D91
Abstract: high speed photodiode detector circuit
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IF-D91 IF-D91 90-degree high speed photodiode detector circuit | |
UDT Pin-6dp
Abstract: UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV
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1100nm. drif-013D, UV-013 15OSD-5-0, OSD15-0, OSD15-5T BPX-65R BPX-65 UV-001, UDT Pin-6dp UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV | |
UDT Sensors PSD
Abstract: UDT-555D OSI-515 UDT-020UV cf 455 e 555D UDT-555UV UDT-020D UDT-055UV UDT-455
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1100nm. UDT-455 UDT-455LN UDT-455UV UDT-455UV/LN OSI-515 OSI-515 UDT Sensors PSD UDT-555D UDT-020UV cf 455 e 555D UDT-555UV UDT-020D UDT-055UV UDT-455 | |
Contextual Info: IF D91 Plastic Fiber Optic Photodiode 8/13 Description The IF-D91 is a high-speed photodiode detector housed in a “connector-less” style plastic fiber optic package. Optical response of the IF-D91 extends from 450 to 1100 nm, making it compatible with a wide range of visible and nearinfrared LED and laser diode sources. |
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IF-D91 | |
SFH 508Contextual Info: Silizium-Differential-Fotodiode Silicon Differential Photodiode SFH 221 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Hohe Fotoempfindlichkeit • Hermetisch dichte Metallbauform ähnlich TO-5 , geeignet bis 125 °C1) |
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GMOY6639 SFH 508 |