PHOTODIODE 10GHZ PIN Search Results

stm-64 dfb

Abstract: FU-641SEA-1M1 FU-641SEA-1M2 FU-641SEA-1M3 FU-641SEA-1M4 OC192 STM-64 stm 64 laser diode 1550 nm 1.55 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL photodiode 10Ghz PIN
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-641SEA-1Mx 1.55 µm EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR, 10GB/s DIGITAL APPLICATION) DESCRIPTION Module type FU-641SEA-1Mx is a 1.55µm EA modulator integrated DFB-LD module with singlemode optical fiber.

DFB ea

Abstract: DFB ea 10GHZ FU-641SEA-1M1 FU-641SEA-1M2 FU-641SEA-1M3 OC192 STM-64 10ghz optical modulator dfb-ld 1.55 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-641SEA-1Mx 1.55 µm EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR, 10GB/s DIGITAL APPLICATION) DESCRIPTION Module type FU-641SEA-1Mx is a 1.55µm EA modulator integrated DFB-LD module with singlemode optical fiber.

transistor 9716

Abstract: photodiode 10Ghz PIN
Contextual Info: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

optical receiver -25dbm 10ghz

Abstract: photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716
Contextual Info: 19-1970; Rev 2; 1/02 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at 3.3V Supply ♦ 1.1µARMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAP-P Input Overload ♦ Received-Signal Strength Indication

germanium photodiode PIN

Abstract: photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz
Contextual Info: 19-1970; Rev 0; 3/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

transistor 9716

Abstract: photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11
Contextual Info: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

GaAs photodiode 10G

Abstract: NTT Electronics GaAs NLG2132 10G PD photodiode 10Ghz PIN
Contextual Info: NS GD E056D PRELIMINARY MAY 29, 2000 NEL NLG2132 TRANSIMPEDANCE AMPLIFIER BARE DIE This NLG2132 is a GaAs MESFET IC Chip that performs signal amplification over the wide frequency range extending from DC to 7.7 GHz. This IC Chip is applicable to 10 Gb/s optical fiber communication systems.

EAM LD

Abstract: FU-653SEA-1M2 DFB ea 10GHZ FU-653SEA-1M1 FU-653SEA-1M3 FU-653SEA-1M4 FU-653SEA-V1M1 FU-653SEA-V1M2 FU-653SEA-V1M3 FU-653SEA-V1M4
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-653SEA-1Mx 1.55 µm EA MODULATOR INTEGLATED DFB-LD MODULE (7 PIN PACKAGE WITH GPO CONNECTOR, 10GB/s DIGITAL APPLICATION) DESCRIPTION Module type FU-653SEA-1Mx is a 1.55µm EA modulator integrated DFB-LD module with singlemode optical fiber.

Contextual Info: 1,550nm Modulator Integrated DFB Laser FLD5F20NP-G FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection

photodiode 10Ghz PIN

Abstract: FLD5F20NP-C 10 gb laser diode
Contextual Info: 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection

Photodiode, 1550nm, butterfly package

Abstract: STM-64 receiver 1550nm GR468-CORE STM-64 photodiode 10Ghz PIN PIN Photodiode DWDM 10 Gbps 10 Gbps transmitter DWDM receiver dwdm samsung Samsung rf module
Contextual Info: 1 Technical Data Sheet February 2002 FIBEROPTICS DIVISION PD78S3A 10 Gbps PIN-TIA High Sensitivity Receiver Features ¾ 14-pin Butterfly Package ¾ High Sensitivity of –21 dBm ¾ High Overload of + 1 dBm ¾ Wide Dynamic Range of 22dBm ¾ Low Capacitance and High Speed

connector SAMSUNG 30 PIN

Abstract: Photodiode, 1550nm, butterfly package connector SAMSUNG 22 PIN stm-64 OC-192 gpo PIN Photodiode 4 Ghz 1550 nm 070AW photodiode 10Ghz PIN PIN Photodiode DWDM 10 Gbps 10 Gbps transmitter DWDM
Contextual Info: 1 Technical Data Sheet December 2001 FIBEROPTICS DIVISION PD78S3A 10 Gbps PIN-TIA High Gain Receiver Module Features ¾ Applicable to 10 Gbps operation ¾ Planar structure for high reliability ¾ Operation from 1200 nm to 1600 nm ¾ Typical sensitivity of –20 dBm

Contextual Info: NIR-LN 7/06/07 11:39 Page 1 NIR-LN series LiNb03 Intensity and Phase Modulators for Near InfraRed Package footprint Features dimensions in mm us About 1010011001 NIR-LN series LiNb03 Intensity and Phase Modulators for Near InfraRed Photline is a young European company who designs and produces integration

MXPE-LN

Abstract: U25-A 85-U25A NIR-MX-LN-10 98-U25A Lithium Niobate Polarization Controller . LIDAR modulators lidar intensity modulator QPSK-LN-40
Contextual Info: NIR-LN 7/06/07 11:39 Page 1 NIR-LN series LiNb03 Intensity and Phase Modulators for Near InfraRed Package footprint Features dimensions in mm us About 1010011001 NIR-LN series LiNb03 Intensity and Phase Modulators for Near InfraRed Photline is a young European company who designs and produces integration

fiber TRANSCEIVER CIRCUIT DIAGRAM rs232

Abstract: HFRD HFRD-14 Honeywell DBM 01 PCB PL-SLR-00-SG3-C3 fiber-optic photodiode for 850nm HFRD-15 photodiode for fiber-optic sensor 850 nm ULM Photonics DS1859
Contextual Info: Reference Design: HFRD-14.0 Rev.11;11/08 REFERENCE DESIGN Multirate 1Gbps to 4.25Gbps 850nm Small Form-Factor Pluggable (SFP) Transceiver Maxim Integrated Products Reference Design: Multirate (1Gbps to 4.25Gbps) 850nm SFP Transceiver Table of Contents 1. Overview. 2

DFB wavelength locker

Abstract: eudyna laser diode FLD5F20CE-E9535 FLD5F20CE-E9425 etalon wavelength locker 55nm E9425 e9530 Hauser+hrc+001 FLD5F20CE-E9195
Contextual Info: 1,550nm MI DFB Laser with Integrated Wavelength Locker FLD5F20CE-E FEATURES • • • • • 10Gb/s Modulator Integrated DFB Laser Diode Module Wavelength: ITU-T grid W9180 1563.05nm thru W9600 (1529.55nm) 1600 ps/nm Dispersion Compact package with GPO connector

EAM LD

Abstract: pin Photodiode 1550 nm 10GHZ FU-641SEA-1M5 FU-641SEA-1M6 FU-641SEA-V1M5 FU-641SEA-V1M6 FU-641SEA-W1M5 FU-641SEA-W1M6 thermo electrical cooler module
Contextual Info: TZ7-01-192B 1/5 Aug 16, 2001 Preliminary APPROVED APPROVED APPROVED A.Adachi T.Onodera Preliminary specification of 10Gb/s EML module Type No.=FU-641SEA-1M5 (Dispersion=1200ps/nm) Type No.=FU-641SEA-1M6 (Dispersion=1600ps/nm) A B x DATE 18,Aug.’01 MITSUBISHI ELECTRIC CORPORATION

TIA 10GHZ

Abstract: GR468-CORE PD78D5A STM-64 power supply SAMSUNG OC-192 pin-tia 10ghz optical modulator connector SAMSUNG 30 PIN Samsung Electronics Company DFB Samsung Electronics Company
Contextual Info: Technical Data Sheet January 2002 FIBEROPTICS DIVISION Preliminary PD78D5A OC-192 PIN-TIA Surface-mount Receiver Features ¾ 15-pin Surface-mountable Small-form Package ¾ Differential RF-Output G-S-G-S-G type ¾ High Sensitivity of –20 dBm ¾ High Overload of + 1 dBm

FU-653SEA-1M5

Abstract: FU-653SEA-1M6 FU-653SEA-V1M5 FU-653SEA-V1M6 FU-653SEA-W1M5 FU-653SEA-W1M6 EAM laser 10ghz optical modulator eml dfb laser diode 1550 pin Photodiode 1550 nm 10GHZ
Contextual Info: TZ7-01-385 1/5 Nov. 15, 2001 Preliminary APPROVED APPROVED APPROVED A.Adachi T.Onodera Preliminary specification of 10Gb/s EML module Type No.=FU-653SEA-1M5 (Dispersion=1200ps/nm) Type No.=FU-653SEA-1M6 (Dispersion=1600ps/nm) A B x DATE 20.Nov. ’01 MITSUBISHI ELECTRIC CORPORATION

Contextual Info: New products FLD5F20NP-C A Modulator integrated with DFB Laser Diode Module for 10G bit/s, 80km Optical Transmission FLD5F20NP-C The FLD5F20NP-C is a compact 8mm-thick , high-performance module that monolithically integrates a DFB laser with an electroabsorption

lasertron QDMH 1

Abstract: Corning Lasertron Analog Photodiode, 1550nm, lasertron Lasertron Lasertron detector, qdmh 2 Lasertron detector corning QDMH2-053 corning resistor Lasertron detector, qdmh 1
Contextual Info: QDMH High-Speed Digital Detector Corning Lasertron • Extremely high 3dB bandwidth up to 18GHz • 50 or 100 Ohm output impedance match • 1200 to 1620nm sensitivity • Low reflection, singlemode fiber coupled Description The QDMH is a high-speed PIN detector

G8925-21

Abstract: G8925 G8925-22 G8925-23 G8925-24 solid state amp 12 ghz InGaas PIN photodiode 10Gbps
Contextual Info: HAMAMATSU PHOTONICS K.K. SOLID STATE DIVISION 1126-1 ICHINO-CHO,HAMAMATSU CITY 435-8558,JAPAN TELEPHONE:053-434-3311 FAX:053-434-5184 PRELIMINARY OCD-B90754B Jun. 2002 Hamamatsu Pigtail type,1.3 / 1.55um,10Gbps InGaAs PIN-PD with Pre-Amplifier Module Type No.G8925 series

2M44

Abstract: 2M53 7812 voltage regulator spec. sheet FU-653SEA-2M89 FU-653SEA-2M11 FU-653SEA-2M12 FU-653SEA-2M13 FU-653SEA-2M14 FU-653SEA-2M15 FU-653SEA-2M16
Contextual Info: TZ7-01-239 1/6 Aug.31, 2001 Preliminary APPROVED APPROVED A.Adachi CHARGED T.Onodera Preliminary specification of 10Gbps EML module with GPO connector for WDM application A B x DATE 4.Sep.’01 MITSUBISHI ELECTRIC CORPORATION C D Approved T.Nambara TZ7-01-239(2/6)

receiver pin diode for 10Gbps

Abstract: stm 64 laser diode 1550 nm receiver dwdm samsung
Contextual Info: Technical Data Sheet June 2002 Preliminary PD78D5A OC-192 PIN-TIA Surface-mount Receiver Features ¾ 15-pin Surface-mountable Small-form Package ¾ Differential RF-Output G-S-G-S-G type ¾ High Sensitivity of –20 dBm ¾ High Overload of + 1 dBm ¾