PHILIPS FA 153 Search Results

S87C51FA

Abstract: 87C51FA 80C51 83C51 83C51FA 87C51 8XC51 8XC51FA S7C51FA
Contextual Info: Philips Sem iconductors M icrocontroller Products Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION FEATURES Tile 83C51 FA and 87C51 FA hereafter generically referred to as 8XC51FA Single-Chip 8-Bit Microcontrollers are manufactured in an advanced CMOS

redresseur

Abstract: philips ET-E 60 T150 1267G redresseur mercure philips Scans-0017804
Contextual Info: PHILIPS DCG 6/18 SINGLE ANODE MERCURY VAPOÜR RECTIFYTNG TUBE TUBE REDRESSEUR MONOPLAQUE A VAPEUR DE MERCURE EINANODIGE GLEICHRICHTERROHRE MIT QUECKSILBERDAMPFFÜHLUNG F ila m e n t : o x id e -c o a te d F ila m e n t : oxyde H e iz fa d e n : Oxyd H e a tin g

S87C51FA-4N40

Abstract: 83C51 87C51FA 80C51 87C51 8XC51 8XC51FA S87C51FA-4A44
Contextual Info: N A P C / P H I L I P S SEMICON] b'lE ]> • b b S a ^ S H O D I I I H I 78B « S I C S Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION FEATURES The 83C51FA and 87C51FA hereafter generically referred to as 8XC51 FA)

A59-11W

Abstract: ATI 216 mmc 304 PICTURE TUBE Scans-0017746 a5911w
Contextual Info: PHILIPS A59-11W 110° TELEVISION PICTURE TUBE W ITH INTEGRAL PROTECTION D ire ct view ing tele v isio n p ic tu re tube w ith m etal backed sc re e n , e le c tro s ta tic focusing, 110° m agnetic deflection and w ith an in teg ral p ro tec tio n ag ain st dangerous m echanical tube fa ilu re s , so th at no

PCF3300

Abstract: AN PCF8576 PCD3347P MAB8048 PCD3347T S020 z97886
Contextual Info: Philips Semiconductors Product specification CMOS microcontroller with on-chip DTMF generator_ PCD3347 G E N E R A L D ES C R IPTIO N The PCD3347 is a single-chip 8 -b it m ic ro c o n tro lle r fabricated in CMOS and is a mem ber o f the PC D 33X X fa m ily . It has an on-chip dual to n e m u lti-fre q u e n cy D T M F generator and o th e r features

BAS32

Abstract: diode bas32 IEC134 BAS32 sod80
Contextual Info: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat

Philips FA 153

Abstract: marking code 33 SMD ic SMD CAPACITORS color code SMD CAPACITORS 106 E MARKING CODE SMD IC 822 1206CG102J9BB0 SMD CAPACITORS color code chart Philips FA 564 Philips COG capacitors marking code LA SMD
Contextual Info: Ceramic Capacitors • Monolithic SMD Chip Capacitors 'i • Construction and Characteristics •IP 6 1m Ip Ip t Monolithic Construction Monolithic ceramic capacitors consist of alternating ceramic 15 to 30 microns onto which metal electrodes are printed. The stacked layers, cut into individual chips, are then

74AHC

Abstract: 74AHC32 74AHC32D 74AHC32PW 74AHCT32 74AHCT32D 74AHCT32PW
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification Q uad 2-in pu t O R g ate 74A H C 32; 74A H C T 32 FEA TUR ES Q U IC K R E F E R E N C E DATA • O utput capability: standard GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • Ice category: SSI.

capacitor Y5S 022

Abstract: UK25-103 UK16-104 UK50103 JY 472 M capacitor UK25104 Y5p philips disc ceramic cap ultra-kap UK12-204 UK25103
Contextual Info: Ceramic Capacitors Series U Ultra-Kap , 12VDC through 50VDC Low Voltage EIA Class IV Description: • See figures 1 and 2 for part num ber code for O EM and distributor Parameters_ Voltages: Temperature coefficient: Case Sizes:

silicon npn planar rf transistor sot 143

Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base

Philips FA 291 AMPLIFIER

Abstract: P80C32 Philips FA 291 Philips FA 297 AMPLIFIER
Contextual Info: blE T> NAPC/PHILIPS SEMICOND • bhSBTEH D m 2 0 7 E Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION FEATURES The Philips 80C32/80C52/87C52 is a high-performance microcontroller fabricated

transistor bf 422 NPN

Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103
Contextual Info: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

BFR91 spice parameters

Abstract: BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A
Contextual Info: • bb53^31 0QB51fl2 MTM ■ APX Philips Semiconductors Product specification AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES BFR93A e PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 2 emitter

Contextual Info: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.

Contextual Info: bbS3131 0D24AA0 0T0 H A P X Philips Semiconductors NPN 6 GHz wideband transistor £ Product specification BFG93A; BFG93A/X; BFG93A/XR N AUER PHILIPS/DISCRETE b?E » “ PINNING FEATURES PIN • High power gain DESCRIPTION 4 3 BFG93A Fig.1 Code: R8 • Low noise figure

transistor 667

Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
Contextual Info: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2

Transistor S 40443

Contextual Info: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures

APC UPS CIRCUIT DIAGRAM

Abstract: APC UPS 650 CIRCUIT DIAGRAM P87C52EBPN Philips FA 291 AMPLIFIER P80C32 CIRCUIT DIAGRAM APC UPS 750 ps 53124 80C51 80C52 87C52
Contextual Info: blE T> NAPC/PHILIPS SEMICOND • bhSBTEH D m 2 0 7 E DOS « S I C 3 Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION FEATURES The Philips 80C32/80C52/87C52 is a high-performance microcontroller fabricated

IC 2561 D 431

Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
Contextual Info: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures

1057 D21B

Abstract: CXA 1081 CXA 1081 S cxa 1545 scl 1527 encoder cxa 8005 CXA 1269 14ms 03eb CXA 1182 CXA 1064
Contextual Info: Philips Semiconductors Microcontroller Products Application note ACCESS.bus mouse application code for the microcontroller DESCRIPTION ACCESS.bus is an open standard, defining a system for connecting a number of relatively low speed peripheral devices to a host

SILICON DIFFUSED POWER TRANSISTOR

Abstract: T200I specification of curve tracer bu705 philips semiconductor BU705 700 v power transistor
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU705 High-voltage, high-speed switching, glass passivated npn power transistor in a SO T93A envelope, intended fo r use in horizontal deflection circuits o f television receivers.

Contextual Info: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The

Transistor S 40443

Abstract: C 5478 transistor msc 0645 MSC 1691 AI MSC 1691 Philips FA 291 msc 1699 msc 1697 MCD156 0280 130 085
Contextual Info: ^53^31 Philips Semiconductors IAPX 0024=137 Û00 NPN 7 GHz wideband transistor ^ BFG197; BFG197/X; BFG197/XR N AMER P H I L I P S / D I S C R E T E FEATURES • Product specification b?E D PINNING High power gain PIN • Low noise figure • Gold metallization ensures