PHILIPS EBL 31 Search Results

Diode 10aic

Abstract: BUK455-600B philips EBL 31
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 OGaabbS Ebl H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in

Contextual Info: N AMER PHILIPS/DISCRETE b^E bbS3T31 003Dbb5 Ebl * A P X D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK455-600B

Abstract: BUK455 600B
Contextual Info: N AI1ER P H I LI PS /D I SC RE T E bTE D • bbS3^31 003QbbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE b^E T> m bb£>3^31 00272S3 3SR «APX BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

KTY82-210

Abstract: kty82-220 tz81 sj 2245 KTY82-2 KTY82-221 KTY82-222 KTY82-250 KTY82-251 KTY82-252
Contextual Info: Philips Semiconductors b b s a 1^ ! □□35707 32S • APX Silicon temperature sensors Product specification KTY82-2 series N AUER P H I L I P S / D I S C R E T E b^E T> DESCRIPTION These temperature sensors have a positive temperature coefficient of resistance and are for use in

BUK208-50Y

Abstract: BUK213-50Y SC18
Contextual Info: BUK208-50Y; BUK213-50Y Single channel high-side TOPFET Rev. 02 — 06 June 2002 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic

Contextual Info: BUK208-50Y; BUK213-50Y Single channel high-side TOPFET Rev. 02 — 06 June 2002 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic

silicon npn planar rf transistor sot 143

Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base

BUK212-50Y

Abstract: SC18 BUK217-50Y BUK212
Contextual Info: BUK212-50Y; BUK217-50Y Single channel high-side TOPFET Rev. 01 — 17 March 2003 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic

ISO10483-1

Abstract: PIP3221-DC
Contextual Info: PIP3221-DC Dual channel high-side TOPFET Rev. 01 — 20 February 2004 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected dual high-side power switch based on TOPFET™ Trench technology in a 7-pin surface mount plastic package.

ISO10483-1

Abstract: PIP3224-DC
Contextual Info: PIP3224-DC Dual channel high-side TOPFET Rev. 01 — 20 February 2004 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected dual high-side power switch based on TOPFET™ Trench technology in a 7-pin surface mount plastic package.

BUK221-50DY

Abstract: ISO10483-1 SC18 BUK22
Contextual Info: BUK221-50DY Dual channel high-side TOPFET Rev. 01 — 16 April 2003 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected dual high-side power switch based on TOPFET™ Trench technology in a 7-pin surface mount plastic package.

om361

Abstract: philips ferrite core 4b1 philips hybrid amplifier modules
Contextual Info: N AMER PHILIPS/DISCRETE ]> • bbS3T31 003B444 5ST OM361 IAPX HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide band am plifier in hybrid integrated circuit technique on a thin -film substrate, intended fo r use in mast-head booster-amplifiers, as an am plifier in M ATV systems, and as generalpurpose am plifier fo r v.h.f. and u.h.f. applications.

smd transistor LY

Abstract: BUK206-50X SOT426 BUK202-50X
Contextual Info: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATA SYM BOL PARAMETER II Nominal load current ISO SYM BOL PARAMETER Monolithic temperature and overload protected power switch based on MOSFET technology in a

smd transistor LY

Abstract: BUK202-50Y BUK206-50Y switch smd
Contextual Info: This Material Copyrighted By Its Respective Manufacturer Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK202-50Y BUK206-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System I EC 134 SYMBOL

BUK204-50Y

Abstract: 100-P BUK200-50Y SMD RNA
Contextual Info: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK200-50Y DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount envelope, configured as a single

smd transistor BQ 21

Abstract: smd TRANSISTOR 1D DA ry SMD transistor smd transistor bq 22 transistor smd DA RQ TRANSISTOR SMD KN smd transistor kn smd transistor NG smd transistor bq 11 smd transistor bq 06
Contextual Info: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK200-50X DESCRIPTION BUK204-50X QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount

BUK201-50Y

Contextual Info: This Material Copyrighted By Its Respective Manufacturer Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System I EC 134 SYM BOL PARAMETER

DFCA

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

BUK202-S0Y

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

SMD diode sg 46

Abstract: BUK201-50X BUK205-50X TOPFET high side switch 5 PIN
Contextual Info: Product specification Philips Semiconductors TOPFET high side switch SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATA SYM BOL PARAMETER II Nominal load current ISO SYM BOL PARAMETER Monolithic temperature and overload protected power switch based on MOSFET technology in a

5g smd transistor

Abstract: transistor 5d smd smd transistor 3U
Contextual Info: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50Y DESCRIPTION BUK207-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

2c550

Abstract: smd 419 transistor
Contextual Info: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y DESCRIPTION BUK205-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount