| BUK213-50Y |  | NXP Semiconductors | BUK213-50Y - Single channel high-side TOPFET(tm) - Channel resistance: 1 x 100 mOhms; Configuration: Single High side TOPFET ; Nominal current: 4 A; Operating voltage: 6~35 VDC; Protection current: 18 A; RDS(on): 100 mOhm; VDSmax: 50 V | Original | PDF | 45.66KB | 8 | 
| BUK213-50Y |  | Philips Semiconductors | Single Channel High-Side TOPFET Switch | Original | PDF | 103.45KB | 16 | 
| BUK213-50Y,118 |  | NXP Semiconductors | Single channel high-side TOPFET - Channel resistance: 1 x 100 mOhms; Configuration: Single High side TOPFET ; Nominal current: 4 A; Operating voltage: 6~35 VDC; Protection current: 18 A; RDS(on): 100 mOhm; VDSmax: 50 V; Package: SOT426 (D2PAK); Container: Tape reel smd | Original | PDF | 45.72KB | 8 | 
| BUK213-50Y,118 |  | Philips Semiconductors | PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), MOSFET N-CH 50V 8.5A SOT263 | Original | PDF |  | 16 | 
| BUK213-50Y/T3 |  | NXP Semiconductors | Single channel high-side TOPFET - Channel resistance: 1 x 100 mOhms; Configuration: Single High side TOPFET ; Nominal current: 4 A; Operating voltage: 6~35 VDC; Protection current: 18 A; RDS(on): 100 mOhm; VDSmax: 50 V | Original | PDF | 45.72KB | 8 | 
| BUK213-50Y /T3 |  | Philips Semiconductors |  | Original | PDF | 103.45KB | 16 |