PHILIPS 4312 AMPLIFIER Search Results

4c6 toroids

Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
Contextual Info: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96

Philips 4312 020

Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
Contextual Info: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network

t 3866 power transistor

Abstract: transistor 3866 s t 3866 transistor transistor 3866
Contextual Info: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.

2n4427

Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
Contextual Info: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.

Contextual Info: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features

BLW83

Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and

BLV38

Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
Contextual Info: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .

4312 020 36642

Abstract: transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE J> • IAPX bbS3T31 OGi^GaE b47 BLV38 A VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VHF television transmitters vision or sound amplifiers . Features

Contextual Info: N AMER PHILIPS/DISCRETE b^E » bbS3T31 QDS^SS2 T4T BLX13U IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear

4312 020 36640

Abstract: ferroxcube wideband hf choke
Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

ferroxcube wideband hf choke

Abstract: transistor 4312 BLW50F PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier
Contextual Info: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance

2n3866

Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial

BY206

Abstract: blw86 4312 020 36640 HF power amplifier PHILIPS 4312 amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f.

4312 020 36640

Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

Contextual Info: N AUER PHILIPS/DISCRETE t iT E I> • bb53^31 □D3TD74 OIL A APX BLV59 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope primarily intended fo r use as linear amplifier in u.h.f. television transmitters. Features:

Contextual Info: N AMER PHILIPS/DISCRETE b^E bbSS^l D 003^3^4 b37 BLW78 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB or B operated mobile, industrial and m ilitary transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

transistor c 1974

Contextual Info: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.

PR37 RESISTOR

Abstract: PR37 resistors
Contextual Info: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents

TRANSISTOR blw97

Abstract: MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A,

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

4312 020 36640

Abstract: SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power

BLW50F

Abstract: PHILIPS 4312 amplifier SOT123 Package HF power amplifier 4312 020 36640 MGP472
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in