PH-12 DIODE Search Results

VM716N8

Contextual Info: ^ ^ V T C In c. Value the CustomerTU FEATURES • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise = 0.65nV/VHz max - Head Inductance Range = 0 .2 -5 pH 0.5 pH typical - Write Current Range 5 - 35 mA - Low Input Capacitance = 12 pF typical

712 transistor smd sot23

Abstract: 33m ph diode smd transistor 718 diode PH 33m
Contextual Info: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056

ccsta14n40a10

Abstract: Solidtron SCR TRIGGER PULSE TRANSFORMER UF 407 Diode XFORMER GTO thyristor Curve properties resistor 4700 ohm Thyristor pulse transformer CCSTA14N40 GTO thyristor Application notes
Contextual Info: CCSTA14N40A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 Fax: 610-407-3688 N-Type Semiconductor Discharge Switch, ThinPakTM Data Sheet Rev 0 - 05/12/08 Description Package Size - 12 Cathode contacts SolidtronTM This current controlled

ST-M40

Contextual Info: PH AST-12 Device Programmable, High-Performance ATM/Packet/Transmission SONET/SDH Terminator for Level 12 TXC-06112 DATA SHEET PRELIMINARY DESCRIPTION Integrated clock recovery and synthesis fo r four O C -3c/STM -1 sig n a ls or one O C -1 2 /O C -1 2 c/

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure

MSC0266

Abstract: ID100 MSAER12N50A MSAFR12N50A uA555
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure

EBF83

Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Contextual Info: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs

UF 407 Diode

Abstract: CCSTA14N40 Solidtron 60Pb40Sn SCR PULSE TRANSFORMER SCR TRIGGER PULSE TRANSFORMER SCR 10kA CCSSC14N40A10 GTO MODULE GTO thyristor Application notes
Contextual Info: CCSSC14N40A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 Fax: 610-407-3688 N-Type Semiconductor Discharge Switch, ThinPakTM Data Sheet Rev 0 - 07/16/08 Description Single Size - 12 Chip Module This current controlled SolidtronTM (CCS) discharge switch is an n-type

Contextual Info: SSE D • bh53T31 002S2fll 1 ■ I N AMER PH IL IPS /DISCR ETE J BR220 SERIES V 1 ^ -2 S '- o s ' DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a +/— 12% tolerance series o f nominal breakover voltage.

IRFY340

Abstract: irfv120 IRFY044 IRFY120 IRFY130 IRFY140 IRFY240 IRFY430 IRFY440 IRFY9120
Contextual Info: IOR I RFY Series Devices IRFY Series Data Sheet The IRFY Data Sheet de scrib es 12 devices, 8 N -C hannel and 4 P -C hannel, all con tain ed in the T O -257A B package. T his data sheet is arra ng ed to show com m on ta b u la r and gra ph ical inform ation

gp019

Abstract: GP-019 Allegro A8902 A8902 A8902SLB A8903SLB Q50H
Contextual Info: ALLEGRO MI CROSYSTEMS INC 33E D QS0M33Ô 0 GGS 3 2 4 8902 8903 4 • ALGR AND r r s z - i 3-PH ASE B R V SH LESS D C MOTOR C ONTROLLER/DRIVERS W ITH BACK-EM F SEN SIN G The A8902SLB and A8903SLB are three-phase DMOS back-EMF sensing spindle motor drivers for use in 5 V and 12 V Winchester disc

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

C 12 PH Zener diode

Abstract: C 15 PH Zener diode C 13 PH Zener diode ph 41 zener diode C 12 PH zener Zener PH 200 ph 18 c zener diode ph Series Zener PH 36 Zener ph 12 c zener diode
Contextual Info: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 DO 2 14 ( S MA ) M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 MEL F DO 2 13 DO 3 5 DO 41 w w w. v i s h a y. c o m Selector Guide SMALL SIGNAL ZENER DIODES S MALL S I G NAL DIODE S

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

ph 1n4148

Abstract: DO219AB Syd17m 1n914 SOD123 s07j Do219AB C 13 PH Zener diode 1N4148 sod123 ll4148 sod123 1n4148 ph 1N4148W SOD123
Contextual Info: S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal switching diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .

IRS2156

Abstract: IR2156 application IR2156SPBF ir2156s IR2156 IR2156PBF programmable ignition timing IRS21 SOICN-14
Contextual Info: IR2156 S PbF BALLAST CONTROL IC Features Programmable dead time DC bus under-voltage reset Shutdown pin with hysteresis Internal 15.6V zener clamp diode on Vcc Micropower startup (150 µA) Latch immunity and ESD protection Ballast control and half bridge driver in one IC

PFC BALLAST CONTROL IC

Abstract: IR2166 12v ballast ic ELECTRONIC BALLAST 12v diode 824 C 12 PH zener diode datasheet circuit diagram ballast 12v PD60198 MS-012AC 1N4148
Contextual Info: Data Sheet No. PD60198 revE IR2166 S & (PbF) PFC & BALLAST CONTROL IC Features • Programmable dead time • Internal ignition ramp • Internal fault counter • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc

Contextual Info: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE

10 AMP 1200V RECTIFIER DIODE

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V FTC 960 OM35F120HB OM45L120HB OM50F60HB OM60L60HB k375 fast recovery Diode 1200V 200A
Contextual Info: OM6OL6OHB OM45L120HB Preliminary Data Sheet OM50F60HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp IGBTs With FRED Diodes, Half-Bridge Configuration FEATURES • • • •

MMAD1108

Contextual Info: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting

BUK655-500B

Abstract: T0220AB
Contextual Info: P H ILIPS bSE D INTER NAT ION AL ES 7 1 1 0 6 2 b D0bH31b TTö • PHIN Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET G EN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

marking code PH 200

Abstract: BAV70WS
Contextual Info: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current

ISO-7637-2

Abstract: load dump test ISO7637-2 ISO-7637-2 pulse 5 alternator diodes 7637-2 pulse 5 7637-2 protection circuit Transient Voltage Suppressors PARAMETERS OF TVS TVS06
Contextual Info: V i s h ay I n t e rt e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY PAR and TransZorb ® N HN Transient Voltage Suppressors TVS O 19 62-2012 Diodes - High Quality Transient Voltage Protection for Automotive Transient Voltage Suppressors (TVS) for Automotive Electronic Protection

BYW97G PH

Contextual Info: N AUER PHIL IPS /DI SCRE TE b b 5 3 c!31 0Q270bD 727 * A P X b^E D Philips Semiconductors Preliminary specification Fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics BYW97F; BYW97G QUICK REFERENCE DATA