PH 1N 40 50 Search Results

Contextual Info: Silicon Power Rectifier D Series Dim. Inches Î 00 { Minimum A B C D E F G H h M c E 1 I _L_ I I I G 1 D 1 \ — B— S3520PF S3540PF S3560PF R epetitive Peak Reverse V oltage 50V 100V 200V 300V 400V 500V 600V 16.0 Dia. 12.6 15.2 8 .9 0 13.0 Dia. 9.4 0 2 .2 8

2CDS200912R0001

Abstract: 2CTB815101R0700 2CTB815101R1600 2CTB803853R2400 for OVR T1 1N 25 255 TS DC 24V double POLE MCB 2CTB803853R5600 for OVR T2 1N 40 275 P TS earthing calculation for commercial building 2CTB815101R8900
Contextual Info: Surge Protection Devices OVR Range, System pro M compact OVR PLUS N1 40 No upstream MCB or fuse required NEW OVR Range, System pro M compact ® Summary General points on lightning and its risks Causes of transient overvoltages . 2

2CTB815101R0300

Abstract: 2CTB815101R0800 2CTB803953R0500 2CTB803953R1800 2CTB803851R1200 2CTB803953R1400 2CTB803951R1300 2CTB815101R0700 2CTB803854R1200 2CTB803950R0100
Contextual Info: Main catalogue System pro M compact OVR surge protective devices 1TXH000083C0201.indb 1 07/03/2011 10:19:32 OVR PLUS N1 40 and OVR PLUS N3 40 NEW Residential 1TXH000083C0201.indb 2 Commercial Industrial 07/03/2011 10:19:43 System pro M compact® OVR surge protective devices

RG4 DIODE

Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Contextual Info: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,

2N3904U

Abstract: 2N3906U 1N916 20MS ST30
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=50nA M ax. , lBL=50nA(M ax.) Œ2 @ V ce=30V, V eb=3V. • Excellent DC Current Gain Linearity.

1N1191

Abstract: 1N1198 1N1301 S304100 S304120 S30420 S30440 S30460 S30480 1N2793
Contextual Info: Silicon Power Rectifier S/R304 Series Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes ,^ -J g Microsemi Catalog Num ber S tandard * * * * * * S30420 S30440 S30460 S30480 S 304 100 S 304 120 Notes: 1. Full threads within 2 1 / 2 threads 2. Standard Polarity; Stud is

2CTB815101R0700

Abstract: 2CTB803952R1100 solar power inverter Circuit diagram 2CTB803953R6400 for OVR T1 1N 25 255 TS 2CTB803950R0100 abb inverter 2CTB803952R1200 for OVR T2 1N 40 275 P TS 2CTB803950R0000
Contextual Info: Lightning & Overvoltage Protection Photovoltaic systems ABB : Recognized competence in lightning protection COMPETENCE Lightning wave generator 10 / 350 ABB Laboratory at Bagnères-de-Bigorre, in France 200 kV generator ABB Lightning Protection Group, established

1N3765

Abstract: 1 J 250 1N1184 1N1183 1N1183A 1N1184A 1N1185 1N1185A 1N1190 1N3768
Contextual Info: Silicon Power Rectifier 1N1183—1N1190, 1N3765-1N3768 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes _ _ .6 8 7 .7 9 3 1.00 .4 5 3 .2 0 0 .4 5 0 .2 4 9 .3 7 5 1 6 .9 5 17 .4 4 2 0 .1 4 2 5 .4 0 11.50 5 .0 8 11.43 6 .3 2 9 .5 2 .6 6 7 .0 8 0

di 437

Abstract: 1n3921
Contextual Info: Silicon Power Rectifier S / R 4 2 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA Notes: 1. 3 / 8 - 2 4 U N F -3 A CC 1 1.050 - 4.30 .610 .213 - .344 .276 .465 - 1.060 1.166 4.70 .640 .233 .745 .373 .286

Contextual Info: Visibility Correction Light Sensor MM1616 MITSUMI Visibility Correction Light Sensor Monolithic IC MM1616 Outline This IC is a visibility correction light sensor integrating a photodiode with a current amplifying circuit into one chip. It realizes output characteristics that is close to human visibility by including an optical filter.

Contextual Info: Silicon Pow er R e c t i f i e r Dim Inches M illim e te r M inim um M axim um p D E J_ N otes: 1. Full th re a d s w ith in 2 1 / 2 th re a d s 2. S ta n d a rd P o la rity : S tu d is C a th o d e R everse P o la rity : S tu d is A node A B C D E F G H J

IC ANA 618

Abstract: ANA 618 4057A 4072A 405b 1N4057A 4066A ANA 618 200 10
Contextual Info: 1N4057 thru 1N4085A Mierosemi Corp. ' T h e d 'o d e e x p e r t s SCOTTSDALE, A l SANTA ANA, CA F o r m o re in fo rm a tio n call: 602 9 4 I-6 3 0 0 FEATURES HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES . ZENER VOLTAGE 12.4V to 200V . TEMPERATURE COEFFICIENT RANGE: 0.0 05% / °C to 0.002% /°C

IEC 60384-14

Abstract: F1710 F1773 F1778 F1779
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacitors AC Ca pacito r s w w w. v i s h a y. c o m S e l ector G uide rfi suppression components RFI Suppression Components AC Capacitors AC Capacitors Impedance Z as function of frequency (f) (average)

KTC4419

Contextual Info: SEMICONDUCTOR KTC4419 T E C H N IC A L D A T A KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. MILLIMETERS FEATURES • Excellent Switching Times

BUK555-50A

Abstract: BUK555-50B T0220AB
Contextual Info: N AMER PH IL I PS /D IS CR ET E SSE J> m bfciS3ci31 0D20t3S G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B T “- 3 ? - y 3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options

1N6306 JANTX

Abstract: 1N6304 1N6305 1N6306
Contextual Info: Military Ultra Fast Rectifier 1N6304 - 1N6306 Dim Inches M illim eter Minimum Maximum Minimum Maximum N otes Notes: „ I I L il . il J 1. 1 /4 -2 8 U N F 3 A th re ad s 2. Full th re a d s w ithin 2 1 /2 th re ad s 3. For Reverse P o la rity add R to P a rt Num ber

2N3904S

Abstract: 2N3906S 2N3904S SOT-23 2N3906S SOT-23 2N3904 ph-13 transistor 1N916 20MS
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES : ICEx=50nA Max. , IBL=50nA(M ax.) V eb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VcE(sat)=0.3V(Max.) @Ic=50mA, lB=5mA.

85031B

Contextual Info: E5061B-3L5 LF-RF Network Analyzer with Option 005 Impedance Analysis Function Data Sheet E5061B-3L5 with Option 005; NA plus ZA in one box To ensure the performance and reliability of electronic equipment, it is crucial to evaluate impedance characteristics of various electronic

zener diode 1N PH 48

Abstract: 1n 48 ph zener ferrite core transformer
Contextual Info: ERICSSON ^ October 1998 PBL 3755/1N PCM-Repeater Description Key Features The PBL 3755/1N is a bipolar integrated circuit that contains all the necessary functions to form a regenerative repeater for Pulse Code Modulated PCM telecommunications systems. The circuit is designed to operate at 2.048 Mbps CEPT

1N4004

Abstract: 1N4004 rectifier diode
Contextual Info: UNCONTROLLED DOCUMENT SC:0.50 PART N U M B E R SSI —LXH9SBC —Q1 9 9 3 8 CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. PRELIMINARY IN P / N DIR ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C PARAMETER

LNL-LT1

Contextual Info: @ S P S P T 1 1 6 T SIGNAL PROCESSING TECHNOLOGIES THREE TERMINAL VOLTAGE REGULATOR FEATURES APPLICATIONS • • • • • • • • • • • • • • • Low Dropout Voltage Very Low Standby Current No Load Good Load Regulation Internal Thermal Shutdown

SK1502

Contextual Info: SEIVITEOH SK1502 1:5 Clock and Data Distributor Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. Functional Description The SK1502 is an extremely fast, stable, and accurate low skew 1:5

EM 328

Abstract: 1N5149A
Contextual Info: tV J A N S tV 1N6103-1N6137 1N6139-1N6173 1N6103A-1N6137A 1N6139A-1N6173A Microsemi Corp. $T+ \}>fj'otfvc*oeri\ SANTA A N A , CA For mure inform ation call' 7M FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR HOST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION.