PG2279 Search Results

Contextual Info: PG2279 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)1.0

2N3744

Abstract: TO111 2N3745 2N3747 PG2290 PG2291 PG2292 PG2293 TO111 package 93A0010
Contextual Info: i ii n n m ELECTRONICS INC m <mi n .w » □□435TB m . n . . i w ~ j.< uj.r . . i l.,i. M, V ' » » v - ' r ’ " E g -l DD00G10 ELECTRONTCS O Linear hfE from 10 mA to 5 amps Low saturation voltage at maximum collector current • High voltage, High frequency f t = 70 MHz typical

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