PG 688 Search Results

7803 3V 1A positive voltage regulator

Abstract: gyrometer fog gyro lt3992 Rockwell Collins transceiver 2x160 LT3755 LTC3813 LTC4098 marlow at 12-6-14
Contextual Info: VOL 2 Automotive Electronics Solutions High Performance Analog ICs Typical Automotive Power Architecture + 4V to 80V 12V Battery Power 60V to 80V Monolithic Switchers: Pg 02, 06, 16 LDOs: Pg 15, 16 Controllers: Pg 03, 16 8V, 5V, 3.3V 6V Monolithic Switchers: Pg 10

Mining Cable Engineering Handbook

Contextual Info: Mining Cable Engineering Handbook 2nd Edition Table of Contents 1. GENERAL PROPERTIES OF COPPER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pg. 1 1.1 Resistance to Annealing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pg. 1

hitachi ic 29050 h

Abstract: 0/hitachi ic 29050 h semiconductor cross reference
Contextual Info: SEMI-CONDUCTOR Cross Reference AMD Device P/N RNP/N Fujitsu P/N RNP/N Intel P/N A M 29030 P G A -1 46C H 3-S B500 PG A -064A H 3-S P 54C A M 29117 P G A -0 68C H 3-S B2000 P G A -135A H 3-S i860 i486 A M 29325 PG A-145AH 3-5 C440H PG A -064A H 3-S AM 29331

HA3808-AL

Abstract: TPS6211-x 6 uH 1.5a inductor
Contextual Info: Document 688-1 Power Inductor – HA3808-AL For TI TPS6211X Step-Down Converters • Designed for Texas Instruments TPS6211X 1.5A, 17-Vin 1 MHz Step-Down Converters with LBI and PG functions. • High current, magnetically shielded power inductor • Soft saturation makes them ideal for VRM/VRD applications

Contextual Info: Document 688-1 Power Inductor – HA3808-AL For TI TPS6211X Step-Down Converters • Designed for Texas Instruments TPS6211X 1.5A, 17-Vin 1 MHz Step-Down Converters with LBI and PG functions. • High current, magnetically shielded power inductor • Soft saturation makes them ideal for VRM/VRD applications

bp-1200 operator manual

Abstract: CVASM16 RS232 STAG 200 interface palce programmer schematic 24cxx eeprom programmer schematic eeprom programmer schematic 24c02 MICROPROSS ROM 5000B graphical lcd MICROPROSS ROM 3000B Digital Weighing Scale using PIC microcontroller
Contextual Info: 3 Programmers 3 Programmers Section 3 Programmers 3 Programmers 3 Programmers 3 Programmers  2001 Microchip Technology Inc. DS00104F-page 3-1 DS00104F-page 3-2  2001 Microchip Technology Inc. 3 Abitec Products Programmers DATS and DATS-PG Features: 3

2SK2595AXTB-E

Abstract: 2SK2595AXTB 2sk2595 2SK2595AX b 857 RENESAS marking code u 172 zo 107
Contextual Info: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0401 Rev.4.01 Jan 30, 2006 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. f = 836.5 MHz • Compact package capable of surface mounting

5a6h

Contextual Info: intel CHAPTER 6 INSTRUCTION SET REFERENCE This chapter provides detailed information about each instruction available to the i960 Rx I/O processor. Instructions are listed alphabetically by assembly language mnemonic. Format and notation used in this chapter are defined in section 6.1 . NOTATION pg. 61 .

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting

2SK3390IXTB-E

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

2SK2596

Abstract: 2SK2596BXTL-E
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting

2SK3391

Abstract: 2SK3391JXTL-E on 543 upak 319 0048 0 00 440
Contextual Info: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting

2SK2596BXTL-E

Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting

Contextual Info: irrte l. CHAPTER 6 INSTRUCTION SET REFERENCE This chapter provides detailed information about each instruction available to the i960 Hx processor. Instructions are listed alphabetically by assembly language mnemonic. Format and notation used in this chapter are defined in section 6.1, “NOTATION” pg. 6-1 .

Contextual Info: 2SC4874 Silicon NPN Epitaxial HITACHI Application VHF / UHF wide band amplifier Features • High gain bandv/idth product fr = 5.8 GHz Typ • High gain, low noise figure PG = 10.0 dB Tvp, NF = 1.8 dB Typ at f = 900 MHz Outline TO -92 2 1. Base 2. Emitter

A361

Contextual Info: CD 297 BB Series 7 000h at 105°C CD 299 PG CD 29H QH • Extended Lifetime at 105°C · High Ripple Current · High Professional Switch Mode Power Supplies · Frequency Converters longest life higher current highest current CD 296 KC CD 297 BB longer life

DIN 6880

Abstract: PG-TO252-5-3 50P03L SPD50P03L
Contextual Info: SPD50P03L G OptiMOS -P Power-Transistor Product Summary Features V DS • P-Channel -30 R DS on ,max • Enhancement mode V 7 ID mΩ -50 A • Logic level • 175°C operating temperature • Avalanche rated PG-TO252-5-3 • dv /dt rated • High current rating

BB506M

Contextual Info: BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise NF = 1.4 dB typ. (f = 900 MHz)

50P03L

Abstract: DIN 6880
Contextual Info: SPD50P03L G OptiMOS -P Power-Transistor Product Summary Features V DS • P-Channel -30 R DS on ,max • Enhancement mode V 7 ID mΩ -50 A • Logic level • 175°C operating temperature • Avalanche rated PG-TO252-5 • dv /dt rated • High current rating

DIN 6880

Abstract: SPD50P03L 50p03l
Contextual Info: SPD50P03L G OptiMOS -P Power-Transistor Product Summary Features V DS • P-Channel -30 R DS on ,max • Enhancement mode V 7 ID mΩ -50 A • Logic level • 175°C operating temperature • Avalanche rated PG-TO252-5 • dv /dt rated • High current rating

DIN 6880

Abstract: 50p03 pg-to252-5
Contextual Info: SPD50P03L G OptiMOS -P Power-Transistor Product Summary Features V DS • P-Channel -30 R DS on ,max • Enhancement mode V 7 ID mΩ -50 A • Logic level • 175°C operating temperature • Avalanche rated PG-TO252-5 • dv /dt rated • High current rating

MIL-PRF-24758-31

Contextual Info: MIL-PRF 24758A MIL-PRF-24758-31 Adapter for PG Thread Basic Number A Conduit Size Code Table I M24758-31 C 16 A Thread Code (Table II) E O-Ring D K P A Thread C Thread Wrench Flats .188 (4.8) Diamond Knurl APPLICATION NOTES 1. Assembly identified with manufacurer’s code identification

MIL-PRF-24758-3

Abstract: M24758-2 M24758-31
Contextual Info: MIL-PRF 24758A MIL-PRF-24758-31 Adapter for PG Thread A Basic Number Conduit Size Code Table I M24758-31 C 16 A Thread Code (Table II) E O-Ring D K A Thread P C Thread Wrench Flats .188 (4.8) Diamond Knurl APPLICATION NOTES 1. Assembly identified with manufacurer’s code identification