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PDTC114EU
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NXP Semiconductors
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PDTC114EU - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EU ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 200 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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730.96KB |
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PDTC114EU
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Philips Semiconductors
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NPN resistor-equipped transistor |
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54.76KB |
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PDTC114EU
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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82.93KB |
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PDTC114EU,115
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EU ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 200 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT323 (SC-70); Container: Tape reel smd |
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100.88KB |
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PDTC114EU,115
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NXP Semiconductors
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PDTC114 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal |
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730.96KB |
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PDTC114EU,135
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NXP Semiconductors
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PDTC114EU - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EU ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 200 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT323 (SC-70); Container: Tape reel smd |
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730.96KB |
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PDTC114EU,135
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EU ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 200 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT323 (SC-70); Container: Tape reel smd |
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100.88KB |
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PDTC114EU,185
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NXP Semiconductors
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PDTC114EU - PDTC114EU - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm |
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730.96KB |
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PDTC114EU/A2,115
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NXP Semiconductors
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PDTC114EU/A2 - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm, SOT323 Package, Standard Marking, Reel Pack, SMD |
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730.96KB |
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PDTC114EU/MIF
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Nexperia USA
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - RET |
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14.58MB |
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PDTC114EUT/R
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EU ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 200 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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100.88KB |
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PDTC114EUTR
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Philips Semiconductors
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NPN resistor-equipped transistor |
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57.63KB |
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PDTC114EU
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Shenzhen Heketai Electronics Co Ltd
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NPN small signal digital transistor in SOT-323 package with built-in bias resistors, 50 V collector-base and collector-emitter voltage, 100 mA output current, 200 mW power dissipation, and DC current gain of 30. |
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PDTC114EU
