PDE 120 Search Results
PDE 120 Price and Stock
Amphenol FCi HM2P09PDE120N9LFBackplane Connector - Header - Male Pins - 55 Position - 5 Rows - Press-Fit Termination - Through Hole. |
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HM2P09PDE120N9LF |
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HM2P09PDE120N9LF | Bulk | 11 Weeks | 576 |
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HM2P09PDE120N9LF | 768 | 1 |
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HM2P09PDE120N9LF |
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HM2P09PDE120N9LF | 110 | 40 |
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Amphenol FCi HM2P07PDE120N9LFConn Hard Metric HDR 110 POS 2mm Press Fit ST Thru-Hole Tray |
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HM2P07PDE120N9LF |
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HM2P07PDE120N9LF | Bulk | 13 Weeks | 1,152 |
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HM2P07PDE120N9LF |
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HM2P07PDE120N9LF | 1,067 | 30 |
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Amphenol FCi HM2P66PDE120N9LFConn Hard Metric HDR 110 POS 2mm Press Fit ST Thru-Hole Tray |
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HM2P66PDE120N9LF |
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HM2P66PDE120N9LF | 139 | 25 |
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Amphenol Corporation HM2P07PDE120AALF- Trays (Alt: HM2P07PDE120AALF) |
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HM2P07PDE120AALF | Tray | 6 Weeks | 1,152 |
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Amphenol Corporation HM2P08PDE120ABLFHM2P08PDE120ABLF-HM2 5RVH STUBTYPB 1.25AU - Trays (Alt: HM2P08PDE120ABLF) |
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HM2P08PDE120ABLF | Tray | 6 Weeks | 1,152 |
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HM2P08PDE120ABLF | 17 Weeks | 1,152 |
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PDE 120 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MBN600GR12A
Abstract: Hitachi DSA0047
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Original |
pde-n600gr12a-0mbn600gr12a00a/1200vweight570g+1 | |
MBM100GR12A
Abstract: Hitachi DSA0047
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Original |
pde-m100gr12a-0mbm100gr12a00a/1200vweight230g+1 | |
hitachi igbt
Abstract: IGBT 1200A MBN1200GR12A Hitachi DSA0047
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Original |
pde-n1200gr12a-0mbn1200gr12a200a/1200vweight1300g+3 | |
MBN400GR12A
Abstract: Hitachi DSA0047
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Original |
pde-n400gr12a-0mbn400gr12a00a/1200vweight480g+1 | |
PDE-N600GR12A-0
Abstract: MBN600GR12A MBN600GR12
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Original |
pde-n600gr12a-0mbn600gr12a00a/1200vweight570g+1 | |
MBM150GR12A
Abstract: Hitachi DSA0047
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Original |
pde-m150gr12a-0mbm150gr12a50a/1200vweight230g+1 | |
fast recovery diode 600v 1200A
Abstract: diode current 1200A MBN1200GR12A IGBT 1200A PDE-N1200GR12A-0 IGBT 1200A 600V
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Original |
pde-n1200gr12a-0mbn1200gr12a200a/1200vweight1300g+4 | |
ETON
Abstract: MBN400GR12A PC2500
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Original |
pde-n400gr12a-0mbn400gr12a00a/1200vweight480g+2 | |
MBM200GR12A
Abstract: Hitachi DSA0047
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Original |
pde-m200gr12a-0mbm200gr12a00a/1200vweight230g+1 | |
mbm150gr12
Abstract: MBM150GR12A MBM150
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Original |
pde-m150gr12a-0mbm150gr12a50a/1200vweight230g+2 | |
MBM200GR12AContextual Info: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD |
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pde-m200gr12a-0mbm200gr12a00a/1200vweight230g | |
MBM100GR12
Abstract: MBM100GR12A
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Original |
pde-m100gr12a-0mbm100gr12a00a/1200vweight230g+1 | |
MBM300GR12AContextual Info: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8 |
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pde-m300gr12a-0mbm300gr12a00a/1200vweight460g | |
MBM300GR12A
Abstract: Hitachi DSA0047
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Original |
pde-m300gr12a-0mbm300gr12a00a/1200vweight460g+1 | |
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VT244A
Abstract: 72V1
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72-bit72v1600gs-50/-6072v1610gs-50/-6016mx72+6 | |
vt244aContextual Info: 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information • 8 388 608 words by 72-bit ECC - mode, one bank organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) |
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72-bit72v8000gs-50/-6072v8010gs-50/-6072v8000/10gs-50+5 | |
PQ62
Abstract: DQ73
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parity/x72pq62dq73 | |
74ABT244Contextual Info: 1M x 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time |
Original |
72-bit721000gs-60/-70721010gs-60/-70hym721000/10gs-60/-70+3 | |
q207
Abstract: VT244A DM1687
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Original |
72-bit72v1600gs-50/-6072v1610gs-50/-6016mx72+7 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JED EC -standard 168-lead d u a l-in -lin e memory module (DIMM) with 84 separate contacts per side, consist |
OCR Scan |
mcm64400168-lead400-m | |
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Contextual Info: 4M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 4M x 72 organisation • Optimized for ECC applications |
Original |
72-bit72v4005gs-50/-6072v4015gs-50/-60hym72v4005/15gs-50/-60+4 | |
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Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16M x 72 organisation • Optimized for ECC applications • Fast Page Mode Operation |
Original |
72-bit72v1620gs-50/-6072v1630gs-50/-60hym72v1620/30gs-50/-60+4 | |
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Contextual Info: SIEMENS 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications |
OCR Scan |
72-bit72v2005gs-50/-60hym72v2005gs-50/-60+2 | |
bj 94 131- 6
Abstract: LV244A
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Original |
72-bit72v4000gs-50/-6072v4010gs-50/-60hym72v4000/10gs-50/-60+6 | |