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    PDE 120 Search Results

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    Amphenol FCi HM2P09PDE120N9LF

    Backplane Connector - Header - Male Pins - 55 Position - 5 Rows - Press-Fit Termination - Through Hole.
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    Master Electronics HM2P09PDE120N9LF
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    Bristol Electronics HM2P09PDE120N9LF 768 1
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    Interstate Connecting Components HM2P09PDE120N9LF
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    Powell Electronics HM2P09PDE120N9LF 110 40
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    Amphenol FCi HM2P07PDE120N9LF

    Conn Hard Metric HDR 110 POS 2mm Press Fit ST Thru-Hole Tray
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    Interstate Connecting Components HM2P07PDE120N9LF
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    Powell Electronics HM2P07PDE120N9LF 1,067 30
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    Amphenol FCi HM2P66PDE120N9LF

    Conn Hard Metric HDR 110 POS 2mm Press Fit ST Thru-Hole Tray
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    Powell Electronics HM2P66PDE120N9LF 139 25
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    Amphenol Corporation HM2P07PDE120AALF

    - Trays (Alt: HM2P07PDE120AALF)
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    Avnet Americas HM2P07PDE120AALF Tray 6 Weeks 1,152
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    Amphenol Corporation HM2P08PDE120ABLF

    HM2P08PDE120ABLF-HM2 5RVH STUBTYPB 1.25AU - Trays (Alt: HM2P08PDE120ABLF)
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    Avnet Americas HM2P08PDE120ABLF Tray 6 Weeks 1,152
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    Avnet Abacus HM2P08PDE120ABLF 17 Weeks 1,152
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    PDE 120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MBN600GR12A

    Abstract: Hitachi DSA0047
    Contextual Info: PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


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    pde-n600gr12a-0mbn600gr12a00a/1200vweight570g+1hitachi dsa0047 PDF

    MBM100GR12A

    Abstract: Hitachi DSA0047
    Contextual Info: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


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    pde-m100gr12a-0mbm100gr12a00a/1200vweight230g+1hitachi dsa0047 PDF

    hitachi igbt

    Abstract: IGBT 1200A MBN1200GR12A Hitachi DSA0047
    Contextual Info: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


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    pde-n1200gr12a-0mbn1200gr12a200a/1200vweight1300g+3hitachi igbtigbt 1200ahitachi dsa0047 PDF

    MBN400GR12A

    Abstract: Hitachi DSA0047
    Contextual Info: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


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    pde-n400gr12a-0mbn400gr12a00a/1200vweight480g+1hitachi dsa0047 PDF

    PDE-N600GR12A-0

    Abstract: MBN600GR12A MBN600GR12
    Contextual Info: PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


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    pde-n600gr12a-0mbn600gr12a00a/1200vweight570g+1mbn600gr12 PDF

    MBM150GR12A

    Abstract: Hitachi DSA0047
    Contextual Info: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


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    pde-m150gr12a-0mbm150gr12a50a/1200vweight230g+1hitachi dsa0047 PDF

    fast recovery diode 600v 1200A

    Abstract: diode current 1200A MBN1200GR12A IGBT 1200A PDE-N1200GR12A-0 IGBT 1200A 600V
    Contextual Info: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


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    pde-n1200gr12a-0mbn1200gr12a200a/1200vweight1300g+4fast recovery diode 600v 1200adiode current 1200aigbt 1200aigbt 1200a 600v PDF

    ETON

    Abstract: MBN400GR12A PC2500
    Contextual Info: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.


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    pde-n400gr12a-0mbn400gr12a00a/1200vweight480g+2etonpc2500 PDF

    MBM200GR12A

    Abstract: Hitachi DSA0047
    Contextual Info: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


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    pde-m200gr12a-0mbm200gr12a00a/1200vweight230g+1hitachi dsa0047 PDF

    mbm150gr12

    Abstract: MBM150GR12A MBM150
    Contextual Info: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


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    pde-m150gr12a-0mbm150gr12a50a/1200vweight230g+2mbm150gr12mbm150 PDF

    MBM200GR12A

    Contextual Info: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original
    pde-m200gr12a-0mbm200gr12a00a/1200vweight230g PDF

    MBM100GR12

    Abstract: MBM100GR12A
    Contextual Info: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original
    pde-m100gr12a-0mbm100gr12a00a/1200vweight230g+1mbm100gr12 PDF

    MBM300GR12A

    Contextual Info: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8


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    pde-m300gr12a-0mbm300gr12a00a/1200vweight460g PDF

    MBM300GR12A

    Abstract: Hitachi DSA0047
    Contextual Info: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8


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    pde-m300gr12a-0mbm300gr12a00a/1200vweight460g+1hitachi dsa0047 PDF

    VT244A

    Abstract: 72V1
    Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time


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    72-bit72v1600gs-50/-6072v1610gs-50/-6016mx72+6dm168-7hym72v1600/10gs-50/-6072-eccl-dim-168-7vt244a72v1 PDF

    vt244a

    Contextual Info: 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information • 8 388 608 words by 72-bit ECC - mode, one bank organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)


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    72-bit72v8000gs-50/-6072v8010gs-50/-6072v8000/10gs-50+572v8000/10gs-60dq0-dq71hym72v8000/10gs-50/-60l-dim-168-4vt244a PDF

    PQ62

    Abstract: DQ73
    Contextual Info: 168 Pin DIMM Characteristics. 168 Pin Buffered DIMM Characteristics Basic Architecture ECC Data Bit Assignments DRAM CHIPS Intended primarily for use in 8-byte systems, although use in 4-byte systems is supported via onboard interleave, the basic structure of 168 pin


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    parity/x72pq62dq73 PDF

    74ABT244

    Contextual Info: 1M x 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time


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    72-bit721000gs-60/-70721010gs-60/-70hym721000/10gs-60/-70+3l-dim-168-2gld0586174abt244 PDF

    q207

    Abstract: VT244A DM1687
    Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time


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    72-bit72v1600gs-50/-6072v1610gs-50/-6016mx72+7dm168-7hym72v1600/10gs-50/-6072-eccl-dim-168-7q207vt244adm1687 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JED EC -standard 168-lead d u a l-in -lin e memory module (DIMM) with 84 separate contacts per side, consist­


    OCR Scan
    mcm64400168-lead400-m PDF

    Contextual Info: 4M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 4M x 72 organisation • Optimized for ECC applications


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    72-bit72v4005gs-50/-6072v4015gs-50/-60hym72v4005/15gs-50/-60+472-eccl-dim-168-54mx72dm168-5 PDF

    Contextual Info: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16M x 72 organisation • Optimized for ECC applications • Fast Page Mode Operation


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    72-bit72v1620gs-50/-6072v1630gs-50/-60hym72v1620/30gs-50/-60+472-eccl-dim-168-916mx72dm168-9 PDF

    Contextual Info: SIEMENS 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications


    OCR Scan
    72-bit72v2005gs-50/-60hym72v2005gs-50/-60+2l-dim-168-22dm168-22 PDF

    bj 94 131- 6

    Abstract: LV244A
    Contextual Info: 4M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 • 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)


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    72-bit72v4000gs-50/-6072v4010gs-50/-60hym72v4000/10gs-50/-60+672-eccl-dim-168-54mx72dm168-5bj 94 131- 6lv244a PDF