PD41 Search Results

PD414410

Contextual Info: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 PD41_10 POW-R-BLOKTM Dual Diode Isolated Module 1000 Amperes / Up to 4400 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated

Contextual Info: PD41_10 TM POW-R-BLOK Dual Diode Isolated Module 1000 Amperes / Up to 4000 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification

GL537

Abstract: GL538 PD413PI
Contextual Info: PD413PI PD413PI High Speed Type Photodiode • Features ■ Outline Dimensions 2.0 ±0.2 R1.75 ± 0.1 2.4 2.5 Rest of gate 0.4MAX. 0.8 2-0.77 +1.5 - 1.0 2-0.45 8˚ +0.2 - 0.1 2-0.4 17.15 2. Personal computers 3. Printers 2.54 8˚ 1 8˚ 0.5 MIN. 1. Portable information terminal equipment

UPD411

Abstract: PD411000-12
Contextual Info: NEC ¿/PD411000 1 ,0 4 8 ,5 7 6 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc, PRELIMINARY INFORMATION Description Pin Configurations T h e fiP D 4 1 1000 is a page m ode version 1,048,576-word by 1 -b it d yn a m ic N -channel MOS random access m em ory RAM . It is designed to o p e ra te f r o m a single

414256

Abstract: D414256 NEC 20PIN DIP
Contextual Info: NEC /¿P D 414256 2 6 2 ,1 4 4 X 4 -B IT D YN A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION Description Pin Configurations The //PD414256 is a 262,144-word by 4-bit dynamic N-channel MOS random access memory RAM de­ signed to operate from a single +5 V power supply. The

U7777

Abstract: D41416
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias

PD414010

Abstract: DUAL DIODE
Contextual Info: PD41_10 POW-R-BLOKTM Dual Diode Isolated Module 1000 Amperes / Up to 4000 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification

NEC D41464

Abstract: D41464 IPD41464 L-12
Contextual Info: PD41464 65,536 X 4-Bit Dynamic NMOS RAM F IH l NEC Electronics Inc. Description Pin Configurations The f i PD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup­ ply and fabricated with a double polylayer, IM-channel

D41416

Abstract: PD41416 PD41416-15 HPD41416-12 PD41416-12
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias

D4164

Abstract: D4164 RAM nec D4164-15 4164 ram ram D4164 NEC 4164 D4164-15 pd4164 RAM 4164 4164-15
Contextual Info: NEC |PD4164 65,536x1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 D e s c rip tio n The NEC H-PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS Random-access Memory RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both

GL537

Abstract: GL538 PD413PI
Contextual Info: PD413PI PD413PI High Speed Type Photodiode • Features ■ Outline Dimensions 2.0 ±0.2 R1.75 ± 0.1 2.4 2.5 Rest of gate 0.4MAX. 0.8 2-0.77 +1.5 - 1.0 2-0.45 8˚ +0.2 - 0.1 2-0.4 17.15 2. Personal computers 3. Printers 2.54 8˚ 1 8˚ 0.5 MIN. 1. Portable information terminal equipment

PD410PI

Abstract: L538
Contextual Info: SHARP PD410P PD410PI High Speed Photodiode • Features ■ Outline Dimensions Unit: mm 1. Peak sensitivity wavelength matching with infrared LED( X p= 1 OOOnm) 2. Built-in visible light cut-off filter ■ Applications 1. Infrared remote controllers for TVs,

PD413P1

Contextual Info: PD413PI ^SHAdREP PD413P1 High Speed Type Photodiode • Features ■ Outline Dim ensions Unit : ram 1. B uilt-m visible light c u t-o ff filter 2 .o^±o.2 ±02 4 0 (S en sitivity w av elen g th ran g e : 75 0 to 10 7 0 ran) 2 .4 2. H alf in ten sity angle : A0 : ± 45°

WJ88

Contextual Info: PD414PI a n P D 4 1 4 Htgti Speed PIN Ptiotodnxie for Optical Space Transm ission W • F e a tu re s ■ O utline D im ensions Unit: mm 1. High speed response (cut-off frequency : 40M Hz) 2 .0 ± 0.2 4 .0 1 2. Built-in visible light cut-off filter D e te c to r r e n t e r

PD414410

Abstract: DUAL DIODE
Contextual Info: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 PD41_10 TM POW-R-BLOK Dual Diode Isolated Module 1000 Amperes / Up to 4400 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated

PD412411

Abstract: DUAL DIODE 02E-02
Contextual Info: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 PD41_11 TM POW-R-BLOK Dual Diode Isolated Module 1100 Amperes / Up to 2400 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated

Contextual Info: Central CM PD 4150 Sem icon du ctor Corp. HIGH CURRENT HIGH SPEED SW ITCHING DIODE DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CM PD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface

Contextual Info: PD412PI SMAim Compact Package Type Photodiode with Condensing Lens • Features U n it: mm! I Outline Dim ensions 1. High sensitivity (Tr'P. 0.5 A/W at >. „= 780nm 2. High speed response Detector cenier 4 .0 _ Q t 2.0 ~3-' R 1 .7 5 * 31 2.4 .° -5 » ;a-

Contextual Info: PD41_11 TM POW-R-BLOK Dual Diode Isolated Module 1100 Amperes / Up to 2600 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification

D41464c

Abstract: D41464 NEC D41464 PD41464 WE-HC 41464-15 UPD41464V-10 C-15 L-12 PD41464-15
Contextual Info: NEC ¿/PD41464 6 5 ,5 3 6 X 4 -B IT D Y N A M IC NMOS RAM NEC Electronics Inc. Novem ber 1987 D e s c rip tio n The //PD41464 is a 65,536-word by 4-b it dynam ic Nchartnel MOS random access m em ory RAM designed to operate from a single + 5 -v o lt pow er supply. The

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode PD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

GL537

Abstract: GL538 PD412PI
Contextual Info: PD412PI PD412PI Compact Package Type Photodiode with Condensing Lens • Features ■ Outline Dimensions 1. High sensitivity TYP. 0.5A/W at λ p= 780nm 4.0 ± 0.2 Detector center 2. High speed response R1.75 ± 0.1 2.0 ± 0.2 Unit V mW ˚C ˚C ˚C (2.5 )

Contextual Info: PRELIMINARY PD41_10 POW-R-BLOKTM Dual Diode Isolated Module 1000 Amperes / Up to 4400 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification

Contextual Info: PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 PD41_11 POW-R-BLOKTM Dual Diode Isolated Module 1100 Amperes / Up to 2400 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated