PD2048 Search Results

2CJQJ

Abstract: sot223 device Marking 20CJQ100 40HF EIA-541 P460
Contextual Info: Bulletin PD-20480 rev. H 07/06 20CJQ100 SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform

SOT-227 Package

Abstract: IRFP250 UFB120FA20 0 227 200 001 SOT-227 heatsink
Contextual Info: Bulletin PD-20487 12/01 UFB120FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 28ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape

800H

Abstract: HN29V51211 HN29V51211T-50
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

IRFP250

Abstract: UFB120FA40 ultrafast diode 10a 400v
Contextual Info: Bulletin PD-20488 12/01 UFB120FA40 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 35ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape

40HF

Abstract: 60CTTN015
Contextual Info: Bulletin PD-20489 rev. A 02/03 60CTTN015 60 Amp TRENCH SCHOTTKY RECTIFIER Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular waveform PerDevice 60 A VRRM 15 V 1800 A 0.3 V -55 to150 °C This center tap Schottky rectifier has been optimized for low

800H

Abstract: HN29V51211T-50H
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

AH10T

Abstract: hn29w12811t-50 Hitachi DSA00170
Contextual Info: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル

Contextual Info: Preliminary Data Sheet PD-20482 rev. A 06/98 10BF. Series SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE SMB DO-214AA Features Major Ratings and Characteristics Characteristics 10BF. 10 20 40 Units 60 80 Low profile package IF(AV) 1 A VRRM 100 to 800 V IFSM

PI5A4684

Abstract: GA10 PI5A4684GAE
Contextual Info: PI5A4684 Chip Scale Packaging, Dual SPDT Analog Switch Description • • • • • • • • • • • Pericom Semiconductor's PI5A4684 is a dual high-bandwidth, fast single-pole double throw SPDT CMOS switch. It can be used as an analog switch or as a low-delay bus switch. Specified

300CNQ

Abstract: 300CNQ035 300CNQ040 300CNQ045
Contextual Info: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for

Hitachi DSA00281

Contextual Info: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are

800H

Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
Contextual Info: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

K2111

Abstract: 800H HN29V25611AT-50H Hitachi DSA00480
Contextual Info: HN29V25611AT-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1334A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The

SOT-227 Package

Abstract: SOT-227 heatsink irfp250 ansi UFB200FA40
Contextual Info: Bulletin PD-20486 rev. B 02/02 UFB200FA40 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 60ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape

800H

Abstract: M5M29F25611VP SA10 MITSUBISHI GATE ARRAY mitsubishi S-A11
Contextual Info: MITSUBISHI LSIs M5M29F25611VP MORE THAN 16,057 SECTORS 271,299,072 BITS CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY DESCRIPTION The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities

DO-214AA

Abstract: DO-214AA, SMB DO-214AA diode B 80 smb code book Tape Information
Contextual Info: 10BF. Series Preliminary Data Sheet PD-20482 rev. B 06/99 Ordering Information Table Device Code 10 B F 80 1 2 3 4 1 - Current Rating x 10: 10 = 1A 2 - B = DO-214AA SMB Surface Mount 3 - F = Ultrafast Recovery 4 - Voltage code: Code = VRRM / 10 SMB Tape & Reel Information

10BF10

Abstract: 10BF20 10BF40 10BF60 10BF80 Device Code 10 diode 10bf60
Contextual Info: Preliminary Data Sheet PD-20482 rev. B 06/99 10BF. Series SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE SMB DO-214AA Features Major Ratings and Characteristics Characteristics 10BF. 10 20 40 Units 60 80 For surface mounted applications Low profile package

800H

Abstract: HN29V25611A HN29V25611AT-50 D2111
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi DSA00276

Contextual Info: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

O2-A2

Abstract: 800H HN29V51211 HN29V51211T-50
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

800H

Abstract: ADE-203-1178A HN29W25611T HN29W25611T-50H sa 2111 Hitachi DSA00358
Contextual Info: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled

SOT-227 Package

Abstract: IRFP250 UFB200FA40
Contextual Info: Bulletin PD-20486 rev. C 10/02 UFB200FA40 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape

Contextual Info: Bulletin PD-20480 rev. H 07/06 20CJQ100 SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform

Contextual Info: Bulletin PD-20487 12/01 UFB120FA20 Insulated Ultrafast Rectifier Module Features • • • • • • • • • • trr = 28ns Two Fully Independent Diodes Ceramic Fully Insulated Package VISOL = 2500V AC Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape