PD2001 Search Results

Contextual Info: DIODE 200A Avg 1200~1600 Volts •回路図 CIRCUIT PC20012 PC20016 PD20012 PD20016 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

M243

Abstract: PD20015C
Contextual Info: PD20015C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european directive

AN1294

Abstract: JESD97 J-STD-020B PD20015-E
Contextual Info: PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european

PC20012

Abstract: PC20016 PD20012 PD20016
Contextual Info: DIODE 200A Avg 1200~1600 Volts •回路図 CIRCUIT PC20012 PC20016 PD20012 PD20016 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

PD20010-E

Abstract: PD20010
Contextual Info: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package

PD20012

Abstract: PC20012 PC20016 PD20016 RMS-314
Contextual Info: DIODE MODULE PC20012 PC20016 200A/1200 to 1600V PD20012 PD20016 OUTLINE DRAWING FEATURES PC * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 PD TYPICAL APPLICATIONS * Rectified For General Use

m243

Abstract: PD20015C JESD97
Contextual Info: PD20015C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european

PD20010

Abstract: PD20010-E AN1294 J-STD-020B
Contextual Info: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european

PD20015-E

Abstract: PD-20015
Contextual Info: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package

Contextual Info: •回路図 PC20016 PD20016 200Ａ Ａvg 1600 Ｖolts ＤＩＯＤＥ CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage 非くり返しピーク逆電圧

14005

Abstract: PD20015 AN1294 J-STD-020B PD20015-E
Contextual Info: PD20015-E PD20015S-E RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european

Contextual Info: Bulletin PD-20013 rev. C 05/05 IRUD360CW40 FRED Ultrafast, Soft Recovery Diode Features • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 VR = 400V IF AV = 360A Qrr (typ.) = 1250nC Benefits • Reduced RFI and EMI • Higher Frequency Operation

PD2-L630

Abstract: GXT4-144VBATKIT GXT4-10000RT208
Contextual Info: Liebert GXT4 UPS, 5kVA-10kVA Intelligent, Reliable UPS Protection Liebert® GXT4™ UPS, 5kVA-10kVA Systems: Best Protection for Critical Network Applications Today’s converged networks require increased availability and reliability. IT professionals require higher density power protection systems that

3B3.C

Abstract: IRUD360CW40 IRFP250 20013
Contextual Info: Bulletin PD-20013 Rev.B 10/03 IRUD360CW40 FRED Ultrafast, Soft Recovery Diode Features • Ultrafast Recovery • 150°C Operating Junction Temperature LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 VR = 400V Benefits • • • • VF typ. = 1.23V Reduced RFI and EMI

PD-1503

Abstract: pd1503 PD-2078 PD-2028 pd 2028 PD-2026 PD2028 pd2029 PD-2029 jedec MS-026 ABA
Contextual Info: Pericom offers a wide range of advanced packaging solutions to fit any application including SOTiny , DisplayPort™, ReDriver™, HDMI™, others. Additional information can be obtained from individual data sheets, or by contacting your Pericom representative.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

PD-1503

Abstract: pd1503 h24 sot23-6 MS-026C PBGA272 MO-153-AB PD1002 MO-194AF NA-256 PD1704
Contextual Info: SSOP SSOP H20 H24 TSSOP L8 L20 A56 L14 L24 L16 L28 Q16 Q24 Q20 Q28 TFBGA NC64 SOIC W8 S24 PDIP W14 P20 S28 V56 A48 QSOP SOIC W16 H28 TSSOP S16 V48 BQSOP K56 B48 K48 B40 SOT23 T5 C6 T6 NA256 PBGA MSOP ZB56 PLCC J44 NA272 LFBGA NB64 NB96 NB114 U8 QFN J32 B80

MO-137-AB

Abstract: pericom sot23-6 MO-153-AB PD-1301 MO-150AH PD2001 MO-150AB bcc sot23-5 78 mo 5 PD-1803
Contextual Info: Pericom Standard Packages and Dimensions PERICOM CODE A B C FA FB H J K L NA NB NC P Q R S T U V W PACKAGE TYPE DRAWING NUMBER JE D E C P U B 95 TSSOP-48 TSSOP-56 BQSOP-40 BQSOP-48 BQSOP-80 SC70-5 TQFP-32 LQFP-32 LQFP-52 SSOP-14 SSOP-16 SSOP-20 SSOP-24 SSOP-28

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

S1242 diode

Abstract: S1242 IRFP250
Contextual Info: Bulletin PD-20017 02/01 S1242 HEXFRED TM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 2 VR = 400V VF typ. ! = 1V IF(AV) = 320A

S1240

Abstract: IRFP250 1S1240
Contextual Info: Bulletin PD-20015 02/01 S1240 HEXFRED TM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 2 VR = 600V VF typ. ! = 1.2V IF(AV) = 140A

SD2942

Abstract: PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E
Contextual Info: Radio frequency technologies for innovative solutions Selection guide December 2009 www.st.com/rf DMOS ISM & FM broadcast applications Part number Frequency MHz Pout (W) VDD (V) Gain (dB) Efficiency (%) Package SD2900 400 5 28 13.5 45 M113 SD2902 400 15