PD200 Search Results

Contextual Info: DIODE 200A Avg 1200~1600 Volts •回路図 CIRCUIT PC20012 PC20016 PD20012 PD20016 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

Contextual Info: DIODE 200A Avg 800 Volts ฀ ฀ ฀ ฀ ฀ ฀ PD200S8

M243

Abstract: PD20015C
Contextual Info: PD20015C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european directive

AN1294

Abstract: JESD97 J-STD-020B PD20015-E
Contextual Info: PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european

PC20012

Abstract: PC20016 PD20012 PD20016
Contextual Info: DIODE 200A Avg 1200~1600 Volts •回路図 CIRCUIT PC20012 PC20016 PD20012 PD20016 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

PE3012N

Abstract: PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6012 PC6016
Contextual Info: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N

IR 529

Abstract: PC6012 PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6016
Contextual Info: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N

SE 135 F

Abstract: PC15012 PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6012
Contextual Info: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N

Contextual Info: DIODE 200A Avg 1600 Volts ฀ ฀ ฀ ฀ ฀ ฀ PD200S16 ฀ ฀ AVERAGE FORWARD POWER DISSIPATION FORWARD CURRENT VS. VOLTAGE PD200S16 Per 1 Arm. 5000 ฀ ฀ ฀ 350 1000 ฀ 500 ฀ ฀ 200 100 ฀ 50 ฀ ฀ 20 25 150 10 ฀ ฀ 5 AVERAGE FORWARD POWER DISSIPATION (W)

PC2008

Abstract: PD2008 A80000
Contextual Info: DIODE PC2008 PD2008 200A Avg 800 Volts •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 ＊1 Repetitive Peak Reverse Voltage

PD20010-E

Abstract: PD20010
Contextual Info: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package

PD200KN8

Contextual Info: 200Ａ Avg 8００ Ｖolts ＤＩＯＤＥ •回路図 CIRCUIT PD200KN8 ■外形寸法図 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 Parameter 記号 Symbol くり返しピーク逆電圧 Repetitive Peak Reverse Voltage

PC2008

Abstract: PD2008
Contextual Info: DIODE MODULE PC2008 PD2008 200A/800V OUTLINE DRAWING FEATURES PC * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 PD TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings

PD20012

Abstract: PC20012 PC20016 PD20016 RMS-314
Contextual Info: DIODE MODULE PC20012 PC20016 200A/1200 to 1600V PD20012 PD20016 OUTLINE DRAWING FEATURES PC * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 PD TYPICAL APPLICATIONS * Rectified For General Use

PD200

Abstract: PD200I 1A160 NOVOTECHNIK 1B160
Contextual Info: Single-Turn Wirewound Potentiometers PD200 Series A Special features • very small dimensions • 200 x 103 movements • excellent linearity ±0.4% • very robust • highest protection class B Sealed potentiometer with a wirewound resistance element for

Contextual Info: DIODE 200A Avg 800 Volts PD200S8 •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT （単位 Dimension：mm） PD 1 2 D1 3 D2 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 ＊1 Repetitive Peak Reverse Voltage

PD200S16

Contextual Info: DIODE 200A Avg 1600 Volts PD200S16 •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT （単位 Dimension：mm） PD 1 2 D1 3 D2 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 ＊1 Repetitive Peak Reverse Voltage

PD200KN16

Contextual Info: 200Ａ Avg 16００ Ｖolts ＤＩＯＤＥ •回路図 CIRCUIT PD200KN16 ■外形寸法図 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 Parameter 記号 Symbol くり返しピーク逆電圧 Repetitive Peak Reverse Voltage

Contextual Info: DIODE PC2008 PD2008 200A Avg 800 Volts •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 ＊1 Repetitive Peak Reverse Voltage

PD20010

Abstract: PD20010-E AN1294 J-STD-020B
Contextual Info: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection

4445

Abstract: PD2000
Contextual Info: PD2000 VOLTAGE CONTROLLED CRYSTAL OSCILLATOR VCXO The PD2000 series offers a wide frequency adjustment range with an ACMOS/TTL compatible output. The PD2000 14 pin resistance welded package provides a hermetically sealed unit and operates over an extended

Contextual Info: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european

PD20015-E

Abstract: PD-20015
Contextual Info: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package

Contextual Info: Central PD2003 PD2004 PD2004S Sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR PD2003, PD2004, CM PD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.