PD 242 Search Results

SAA7115HL

Abstract: SAA7115 fuses SAA7115a 4.43mhz convert to 3.58mhz circuit diagrams digital cvbs encoder 1024 768 ic 74 LS 138 DECODER data sheet internal structure function of IC 2822 itu656 mpeg encoder Philips FA 291
Contextual Info: CS-PD HAMBURG Datasheet SAA7115 CVIP2 PAL/NTSC/SECAM Video Decoder with Adaptive PAL/NTSC Comb Filter, High Performance Scaler, I2C Sliced Data Readback and SQ Pixel Output PRELIMINARY File under CS-PD Hamburg, PC-P Contents subject to change without notice.

Contextual Info: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE A A2A Vorläufige Daten / Preliminary Data Abgekündigt nach OS-PD-2008-008 Obsolete acc. to OS-PD-2008-008 Features Besondere Merkmale • package: compact lightsource in multi chip on board technology planar sealed

A2A-EWJW-23

Abstract: OHL02571 SHR-10V
Contextual Info: OSTAR - Projection Lead Pb Free Product - RoHS Compliant LE T A2A, LE B A2A Vorläufige Daten / Preliminary Data Abgekündigt nach OS-PD-2008-008 Obsolete acc. to OS-PD-2008-008 Besondere Merkmale • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip on Board Technologie, plan

40HF

Contextual Info: Bulletin PD-21142 05/06 242NQ030PbF SCHOTTKY RECTIFIER 240Amp Major Ratings and Characteristics Characteristics Description/ Features The 242NQ. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

Contextual Info: Bulletin PD-21142 05/06 242NQ030PbF SCHOTTKY RECTIFIER 240Amp Major Ratings and Characteristics Characteristics Description/ Features The 242NQ. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature.

Contextual Info: INTERNATIONAL RECTI FI ER bSE D • 4055*432 D017442 4fl PD-2.281 International l»»l Rectifier 242NQ030 SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Characteristics ' f av Rectangular waveform V RRM Description/Features 242NQ030 Units 240

Contextual Info: PD-2.281 rev. A 12/97 242NQ030 SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 242NQ030 Units 240 A 30 V 150° C TJ operation 27,000 A Unique high power, Half-Pak module Replaces four parallel DO-5's

242NQ030

Abstract: 40HFL40S02 IRFP460
Contextual Info: PD-2.281 rev. A 12/97 242NQ030 SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 242NQ030 Units 240 A 30 V 150° C TJ operation 27,000 A Unique high power, Half-Pak module Replaces four parallel DO-5's

Contextual Info: SENSITRON SEMICONDUCTOR SHD560390 TECHNICAL DATA DATA SHEET 4343, REV. - POSITIVE ADJUSTABLE 5 AMP LOW DROPOUT VOLTAGE REGULATOR MAXIMUM RATINGS Parameter Input Voltage Storage Temperature Range Lead Temperature Power Dissipation PD Conditions Soldering, 10 seconds

Contextual Info: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32

1N914 smd

Abstract: melf smd 1n914 1N4148 DL-35 1N4148 SMD sot23 PACKAGE 1N4148 DL-35 PACKAGE LL4148 SOd323 1N4148 SMD PACKAGE 1N4148 sod-323 BAS21 SOD323 ll4148 sod123
Contextual Info: SENSITRON SEMICONDUCTOR SMALL SIGNAL SWITCHING DIODES 1 Pd (mW) Package Device Family 200 250 300 350 410 1N4148WS 1N4448WS BAL99W BAS16W BAS16WS BAS19W – BAS21W BAS19WS – BAS21WS BAV70W BAV99W BAW56W MMBD4148W MMBD4448W MMDL6050 MMDL914 1N914 DL914

MOSFET IRF 941

Contextual Info: PD - 97278A IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits

IRFB4410ZPBF

Abstract: Sl4410 AN-994 mosfet irf 150
Contextual Info: PD - 97278C IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits

smd transistor 2f

Abstract: IRG4ZC71KD bridge diode 60a SMD-10 PACKAGE
Contextual Info: PD - 91723 IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 360V , TJ = 125°C,

ZXTN5551FL

Abstract: TS16949 ZXTP5401FL
Contextual Info: ZXTN5551FL 160V, SOT23, NPN High voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 330mW Complementary part number ZXTP5401FL Description C A high voltage NPN transistor in a small outline surface mount package. Features • 160V rating

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

P channel 600v 20a IGBT

Abstract: HF40D120ACE IRGP20B120U-E
Contextual Info: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

ga250ts60u

Contextual Info: International IOR Rectifier PD -5.047 PRELIMINARY "HALF-BRIDGE" IGBTINT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Features Vces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

design ideas

Abstract: TS16949 ZXTN5551FL ZXTP5401FL ZXTP5401FLTA marking P01 ZXTN TR202
Contextual Info: ZXTP5401FL 150V, SOT23, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 330mW Complementary part number ZXTN5551FL Description C A high voltage PNP transistor in a small outline surface mount package. Features • 150V rating

AUIRFS4410

Abstract: max9769
Contextual Info: PD - 96405 AUTOMOTIVE GRADE AUIRFS4410Z AUIRFSL4410Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

ZXTN5551Z

Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
Contextual Info: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating

TS16949

Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

2EZ39D5

Abstract: 2EZ10D5 2EZ11D5 2EZ12D5 2EZ13D5 2EZ14D5 2EZ15D5 2EZ16D5 2EZ17D5
Contextual Info: 2EZ Series SILICON ZENER DIODES DO - 41 VZ : 3.6 - 200 Volts PD : 2 Watts FEATURES : 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) * Complete Voltage Range 3.6 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current 0.205 (5.2)