PC56106 Search Results

resistor 220 ohm

Abstract: capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E
Contextual Info: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization

LM7805 smd

Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

PCC103BCT-ND

Abstract: capacitor siemens 4700 35 DD 102 CAPACITOR Siemens Ferrite PA13 0.1 uF 50v CAPACITOR
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5

Transistor 4733

Abstract: capacitor siemens 4700 35 BDS31314-6-452 CGS C14
Contextual Info: PRE-RELEASE PTF 10134* 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched common source N–channel enhancement–mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime

PTF210301E

Contextual Info: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation

Contextual Info: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.

PTF210301E

Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF082001E

Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
Contextual Info: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest

10134

Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
Contextual Info: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface

PTF+102015

Abstract: PTF102015 102015
Contextual Info: PTF 102015 LDMOS RF Power Field Effect Transistor 30 Watts, 2110–2170 MHz Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures

resistor 220 ohm

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM capacitor siemens 4700 35 200B G200 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Contextual Info: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization

PTF210301A

Abstract: PTF210301E
Contextual Info: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

resistor 220 ohm

Abstract: capacitor siemens 4700 35 P Ferrite Siemens 200B G200 transistor amplifier 3 ghz 10 watts 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM transistor c 380 30-WATT
Contextual Info: PTF 10065 GOLDMOS Field Effect Transistor 30 Watts, 1.93–1.99 GHz Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization

ericsson 10007

Abstract: ca 3161 e IC
Contextual Info: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization

DD 102 CAPACITOR

Abstract: PA13 transistor 200 watt 28 v 0-30 mhz PCC103BCT-ND PCC103B
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 30 Watts, 1800-2000 MHz PTF 102079* Description Key Features The PTF 102079 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 1800 to 2000 MHz. This LDMOS device operates at 47% efficiency with 15 dB gain. Nitride

Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

BDS31314-6-452

Abstract: Transistor 4733
Contextual Info: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface

PTF 102015

Abstract: PCC103BCT-ND 0.1 uF 50v CAPACITOR DD 102 CAPACITOR
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 Efficiency -20 12 -35 ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5