PC133SDRAM Search Results

512m pc133 SDRAM DIMM

Abstract: nec 2405 PC133 registered reference design
Contextual Info: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM E0021H20 (Ver. 2.0) Aug. 20, 2001 (K) Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

PC133 registered reference design

Contextual Info: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM E0021H10 (1st edition) (Previous ADE-203-1080A (Z) Preliminary Jan. 31, 2001 Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

HB52F649E1-75B

Abstract: HB52F649E1 HM5225405BTT pec 730 Hitachi DSA00245 Nippon capacitors
Contextual Info: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM ADE-203-1080 (Z) Preliminary Rev. 0.0 Jun. 28, 1999 Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

PC133-SDRAM

Contextual Info: T O S H IB A THMY7232G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: REV. H 64, 128, 256 MEG: x4, x8, x16 SDRAM CAPACITANCE PARAMETER SYMBOL MIN MAX UNITS NOTES Input Capacitance: CLK CI1 2.5 3.5 pF 1 Input Capacitance: All other input-only pins CI2 2.5 3.8 pF 2 Input/Output Capacitance: DQs CIO 4.0 6.0 pF 3 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS