PC-1000 EQUIVALENT Search Results

PDS-20-600

Contextual Info: PDS-20-600 0 POWER DIVIDERS / COMBINERS 50 to 1000 MHz / 2-Way / Low Insertion Loss / Excellent Phase & Ampli. Bal./ Broadband / PC Hdr PRINCIPAL SPECIFICATIONS Model Number PDS-20-600 Frequency Freq., Range, Perform., MHz MHz 50 - 1000 50 - 150 150 - 1000

Contextual Info: PDS-20-600_0 POWER DIVIDERS / COMBINERS 50 to 1000 MHz / 2-Way / Low Insertion Loss / Excellent Phase & Ampli. B aU Broadband / PC Hdr PRINCIPAL SPECIFICATIONS Model Number PDS-20-600 Frequency Freq., Range, Perform., MHz MHz 5 0 - 1000 5 0 - 150 1 5 0 - 1000

B212 diode

Abstract: 1DI2OOE-O55 T151 of IC 4511
Contextual Info: 1DI2OOE-O55 200a • Outline Drawings / < 7 -h POWER TRANSISTOR MODULE - Sio. WO • SW Œ Kl*3i& • mmm T* ivpt 600 V VcEO 600 V Pc 1000 W Pc - W 9 Mounting 3.5 N-m Terminals 4.5 N *m ju !: 1 V 6 V 200 A A 400 ' 200 Ti M207 E82988(M) Units Vceo

AZ991

Abstract: E44211
Contextual Info: AZ991 MINIATURE PC BOARD RELAY FEATURES • • • • • • • • Contacts rated at 3, 5 or 10 Amps Meets FCC Part 68.302 1500 lightning surge Meets FCC Part 68.304 1000 V dielectric 0.240" 6.1 mm min. between coil and contact Low cost DC coils to 48 VDC

AZ991

Abstract: E44211
Contextual Info: AZ991 MINIATURE PC BOARD RELAY FEATURES • • • • • • • • Contacts rated at 3, 5 or 10 Amps Meets FCC Part 68.302 1500 lightning surge Meets FCC Part 68.304 1000 V dielectric 0.240" 6.1 mm min. between coil and contact Low cost DC coils to 48 VDC

1SV70

Abstract: TBB1004 TBB1004DMTL-E
Contextual Info: TBB1004 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0842-1000 Previous ADE-208-988H Rev.10.00 Aug.10.2005 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

2SD2016

Abstract: FM20
Contextual Info: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)

2SD2016

Abstract: FM20
Contextual Info: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)

100K preset potentiometer

Abstract: 1M preset potentiometer 10K preset potentiometer 100K potentiometer 1K preset potentiometer 100K preset potentiometer balance 10K preset potentiometer DESCRIPTION PRESET 100K 100k Linear Potentiometer 1M preset
Contextual Info: Standard Packaged Circuits Type D e scriptio n and S pe cificatio n PC 1006/1 A n ingenious m u ltim e te r sensitiser designed fo r con ne ction to the !50uA d.c. range o f a m u ltim e te r to give extra SEN SITISER ranges o f 1, 10 and 1 0 0 u A ; 10, 100 and 1000 m V f.s.d.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6LPlastic-Encapsulate Transistors CJ2045 SOT-23-6L Dual 40V complementary transistors FEATURES z 40V complementary device z High hFE z Mounting cost and area can be cut in half MARKING: 2045 EQUIVALENT CIRCUIT

2SC2712 equivalent

Abstract: Equivalent 2SC3074 2SC2873 equivalent Transistor 78 L 05 2SC2712
Contextual Info: 7. Maximum Ratings & Electrical Characteristics 7. Maximum Ratings & Electrical Characteristics 7.1 Maximum Ratings Maximum ratings are equal to those of conventional packages or equivalent with the exception of power dissipation and safe operating area. L ead Type

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol

marking 210

Abstract: FP210 2SB1123
Contextual Info: FP210 Ordering number : EN4537A FP210 PNP Epitaxial Planar Silicon Transistor Driver Applications Features • • Composite type with 2 transistors PNP contained in one package, facilitating high-density mounting. The FP210 is formed with 2 chips being equivalent to the 2SB1123, placed in one package.

IC 4538

Abstract: ITR1100 4538 ic ic 4538 datasheet 2SD1623 FP211 ITR10990 ITR10991 EN4538
Contextual Info: FP211 Ordering number : EN4538A FP211 NPN Epitaxial Planar Silicon Transistor Driver Applications Features • • Composite type with 2 transistors NPN contained in one package, facilitating high-density mounting. The FP211 is formed with 2 chips being equivalent to the 2SD1623, placed in one package.

SAP10N

Abstract: SAP10P
Contextual Info: Equivalent circuit SAP10N B D Application: Audio V 12 A IC IB 1 PC 10 mA Di IF 150 °C –40 to +150 °C Tj Tstg A W IEBO VEB =5V VCEO IC = 30mA 150 hFE ✽ VCE = 4V, IC =7A 5000 VCE sat IC =7A, IB =7mA VBE (sat) 100 µA 100 µA 2.0 V 2.5 1200 mV IF =2.5mA

SAP09N

Abstract: SAP09P equivalent SAP09P ic 41 b
Contextual Info: Equivalent circuit SAP09P B C Application: Audio IC –10 A IB –1 A PC 80 Tc=25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg typ Unit max –100 µA –100 µA IEBO VEB = – 5V VCEO IC = – 30mA –150 hFE ✽ VCE = – 4V, IC = – 6A 5000 VCE (sat)

SAP16N

Abstract: SAP16P SAP16N equivalent SAP16 sap16n circuit
Contextual Info: Equivalent circuit SAP16N D E V 5 V IC 15 A IB 1 A 150 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC = 30mA 160 hFE ✽ VCE = 4V, IC = 10A 5000 VCE (sat) IC = 10A, IB = 10mA 2.0 V VBE (sat) IC = 10A, IB = 10mA

147T

Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
Contextual Info: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit

SAP10N

Abstract: SAP10P
Contextual Info: Equivalent circuit SAP10P S B C Application: Audio –150 V –5 V IC –12 A IB –1 A 100 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg VCB =–150V min typ Unit max –100 µA –100 µA IEBO VEB = –5V VCEO IC =–30mA –150 hFE ✽ VCE =–4V, IC = –7A

3202 a ic

Abstract: SAP09N SAP09P
Contextual Info: Equivalent circuit SAP09N B D Application: Audio V IC 10 A IB 1 A PC 80 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Di IF Tj Tstg typ Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC =30mA 150 hFE ✽ VCE =4V, IC =6A 5000 VCE (sat) IC =6A, IB =6mA 2.0 V

SAP16

Abstract: SAP16N SAP16P SAP16N equivalent SAP16*p sap16n circuit
Contextual Info: Equivalent circuit C Application: Audio –160 V –5 V IC –15 A IB –1 A 150 Tc=25°C W 10 mA IEBO VEB = – 5V VCEO IC = – 30mA –160 hFE ✽ VCE = – 4V, IC=–10A 5000 typ max Unit –100 µA –100 µA (36°) V 20000 VCE (sat) IC = – 10A, IB =–10mA

2SA2018

Abstract: DTC144EE 2SA20 EMF5
Contextual Info: EMF5 Transistors Power management dual transistors EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor !Equivalent circuits (3) (2) DTr2 ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage Industrial Use Equivalent Circuit

WB2010-1SM

Abstract: wb1010pc
Contextual Info: 56 WideBandRFTransformers Coilcraft wide band transformers provide reliable per­ formance at a price considerably lower than currently available equivalents. The transformers are offered in tapped or untapped con­ figurations and are packaged in a low-profile DIP-style