PBSM5240PFH Search Results

Contextual Info: ' 1   PBSM5240PFH 40 V, 2 A PNP low VCEsat BISS) transistor with N-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and

MOSFET TRANSISTOR SMD MARKING CODE

Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11 MOSFET TRANSISTOR SMD MARKING CODE NA
Contextual Info: ' 1   PBSM5240PFH 40 V, 2 A PNP low VCEsat BISS) transistor with N-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and

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Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

NX3008NBKMB

Contextual Info: AN11159 Distributed power in portable devices Rev. 2 — 27 April 2012 Application note Document information Info Content Keywords distributed power, Low DropOut LDO regulators, DC-to-DC converter, load switch, quiescent current, load current Abstract This document describes concepts for portable appliances using