PBSE SENSOR Search Results

Detectors

Abstract: BP-25 pbse lead selenide BP-15 BP-35
Contextual Info: HAMAMATSU CORP n E D • M2STbOT 00D2b01 BP SERIES PbSe Packaged Detectors WAVELENGTH IN M IC R O N S D E S C R IP TIO N : BP series Lead Selenide PbSe detectors are packaged in either TO-5 or TO-8 cans. P/N BP-25 Example PbSe, 2mm sq., TO-5. (see order data)

Detectors

Abstract: pbse PbSe sensor
Contextual Info: HAMAMATSU CORP i> m 42STbOT Q002bDl 1 • -T~Y/-W BP SERIES PbSe Packaged Detectors WAVELENGTH IN MICRONS D E S C R IP T IO N : BP series Lead Selenide PbSe detectors are packaged in either TO-5 or TO-8 cans. P/N BP-25 Example PbSe, 2mm sq., TO-5. (see order data)

gold detector circuit free

Abstract: lead selenide 5638C 5658C pi metal detector 5637C 5657C 5737C 5757C 5933C
Contextual Info: Description Infrared Industries, Inc. Lead Selenide PbSe detectors are thin film photoconductors which are chemi­ cally deposited onto a quartz sub­ strate. Photolithographic techniques are used to define the active areas. Gold electrodes provide noise-free

gold detector circuit free

Abstract: 5637C 5638C INFRARED INDUSTRIES lead selenide 5963C free gold detectors circuit 5668C 5767C 5657C
Contextual Info: 47^14w Qonosw 4 • iri JZij/Jy/ Lead Selenide Detectors .«^Spectral Response 1 .im . ^ 4 £ 6 " . 0 jlm . C ' Longterm Stability^.: ~.p Rugg^,: Compact - iM S Fast:0feiivery, hsw Cost Description Infrared Industries, Inc. Lead Sele­ nide (PbSe detectors are thin film

transistor C4159

Contextual Info: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a

quadrant detector

Contextual Info: MIRA4 MIRA4 - Mid-Infrared Array • 4 discrete optical channels in a small TO-5 package • Spectral sensitivity range: 1.0-5.0 µm • 99.5% channel isolation (nominal) Cal Sensors MIRA4 mid-infrared array in a quadrant format includes four, 1mm square lead

Selection guide

Abstract: Infrared detectors P13243-011MA
Contextual Info: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

Light Detector laser

Abstract: short distance measurement ir infrared diode
Contextual Info: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that

APD InGaAs array

Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
Contextual Info: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4

HgCdTe

Abstract: PbSe Judson J12TE3-66S-R250U J12TE3-66S-R01M detector active area size nep fast light detector Photodiodes Germanium LF356 OP27 OPA111
Contextual Info: n Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Tem perature Effects J12 Series detectors are high-quality Indium A rsenide photodiodes for use in the 1 to 3.8 jim w avelength range. The equivalent circuit is a photon­ generated current source I h w ith parallel

45016m

Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
Contextual Info: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.

lf356 op-amp

Abstract: judson PA-100 thermistor inas
Contextual Info: E 6 8 6 JUJSON b =IE D • 3D3Db05 0000225 G ■ JUD T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.

D-22A thermistor

Contextual Info: Indium Arsenide Detectors Judson Technologies LLC 221 Commerce Drive Montgomeryville, PA 18936 USA Tel: 215-368-6900 Fax: 215-362-6107 Visit us on the web. ISO 9001 Certified www.judsontechnologies.com J12 Indium Arsenide Detector Operating Notes 1.0 to 3.8 µm

ic 555 use with metal detector

Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Contextual Info: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.

dr 25 germanium diode

Abstract: thermistor inas J12-18C
Contextual Info: EGa Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 jim wavelength range. The equivalent circuit is a photon­ generated current source I h with parallel

J12TE4-3CN-R01M

Abstract: J12TE3-66D-R01M HgCdTe J12TE2-66D-R02M J12TE1-37S-R01M J12-18C J12TE3-66D-R250U judson PA-9 J12TE3 J12TE2-66D-R01M
Contextual Info: J}^EGsG JUDSON Indium Arsenide Detector Operating Notes 1.0 to 3.8 ¡am General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 |am wavelength range. The equivalent circuit is a photon­

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

J12-18C

Abstract: R/Detector/"detectors ic"/"CD"/iRAM*10up60a OP2750 J12-5A PbSe Judson thermistor inas R/Detector/"detectors ic"/"CD"/4a2d
Contextual Info: A EGæG JUDSON Indium Arsenide Detector Operating Notes 1.0 to 3.8 im General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 |am wavelength range. The equivalent circuit is a photon­

Contextual Info: Technology introduction CHAPTER 13 1 Semiconductor process technology 1-1 Silicon process technology 1-2 Compound semiconductor process technology 2 Assembly technology 2-1 2-2 2-3 2-4 2-5 Packages for diverse needs Flip chip bonding Dicing Module products

FactoryTalk View SE 6.1 user manual

Abstract: honeywell TDC3000 MANUAL 1756-EN2T honeywell tdc manual honeywell dcs manual 1769sc-IF4IH FactoryTalk View SE manual 1756-CN2R RA56-cATM-BLY90 1794-IF8IH
Contextual Info: PlantPAx Process Automation System Selection Guide Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application, Installation and Maintenance of Solid State Controls publication SGI-1.1 available from your local Rockwell

Selection guide

Abstract: United Detector Technology PSD
Contextual Info: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable

C9750

Abstract: C10990 S11059-78HT S11154-01CT S10604
Contextual Info: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS

htc hd2

Abstract: MSC8113 SC140 HD23 SC8113 HA20
Contextual Info: Freescale Semiconductor Data Sheet Document Number: MSC8113 Rev. 0, 5/2008 MSC8113 FC-PBGA–431 20 mm x 20 mm Tri-Core Digital Signal Processor • Three StarCore SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory